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1. 发明专利

JPH02155531A FORGING DIE AND ITS MANUFACTURE 失效
公开(公告)号：JPH02155531A
公开(公告)日：1990-06-14
申请号：JP31048988
申请日：1988-12-07
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , FUJII KANESHIGE , KIUCHI MASATO , CHIYAYAHARA AKIYOSHI , SHIMOIDANI YOSHINOBU , TERAO NOBUO
IPC分类号： B21J13/02 , C23C14/06 , C23C14/14 , C23C14/16
摘要： PURPOSE:To obtain the forging die being endurable against a severe dynamic high load, having high strength, and also, being excellent in productivity by forming a mixing layer provided with an amorphous metallic layer by a dynamic mixing method on the surface which comes into contact with an object to be worked. CONSTITUTION:A die 1 is constituted of a combined die consisting of a male die (punch side) 1a and a female die 1b, and a steel wire pipe which is cut by a header machine is placed between both the dies as a taper roller use stock 2 being an object to be worked. Especially, to the corner part, a sever dynamic load is applied, and damage such as a crack, a chip, etc., is apt to be generated, therefore, an ion implantation is executed to a part in which the stock 2 and the die come into contact with each other as well as the corner part, and a mixing layer 3 which is brought to mixing is formed. In such a way, the strength becomes high, and the productivity can be improved.

2. 发明专利

JPH03136235A FORMATION OF P-N JUNCTION 失效
公开(公告)号：JPH03136235A
公开(公告)日：1991-06-11
申请号：JP27428089
申请日：1989-10-21
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , TOKUMARU YOZO , SHIMOIYA YOSHINOBU
IPC分类号： C01B21/076 , C01B21/072 , C23C14/48 , H01L21/203 , H01L21/265
摘要： PURPOSE:To form a uniform mixing layer on the surface of an Si wafer or the like and to form an electrically stable and superior thin film type N-type semiconductor to form a P-N junction by a method wherein a thin film type N-type semiconductor layer is formed on the surface of the P-type semiconductor by performing simultaneous ly an ion implantation and a vacuum deposition. CONSTITUTION:A thin film type N-type semiconductor layer is formed on the surface of a P-type semiconductor 7 by performing simultaneously an ion implantation and a vacuum, deposition. For example, an ionimplantation device is used as shown in the diagram, the P-type Si wafer single crystal 7 subjected to an ultrasonic cleaning is placed on a sample stand 17 toward the direction of an ion implantation and after the interior of the device is hermetically sealed, the interior is evacuated by a turbo- molecular pump up to reach 5X10 Torr or thereabouts. Then, in order to remove gaseous molecules being occluded in Al which is a deposition substance, Al placed on a deposition device 11 is preheated as a shutter is put up on the substrate 7. After that, while the amount of deposition of Al and the amount of N ions are respectively adjusted by a film thickness meter 12 and a current integrating meter 19, the shutter is opened to execute a mixing treatment and an AIN thin film is formed on the wafer 7.

3. 发明专利

JPH02156070A METALLIC MOLD FOR CASTING AND PRODUCTION THEREOF 失效
公开(公告)号：JPH02156070A
公开(公告)日：1990-06-15
申请号：JP31067788
申请日：1988-12-08
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , FUJII KANESHIGE , KIUCHI MASATO , CHIYAYAHARA AKIYOSHI , SHIMOIDANI YOSHINOBU , TERAO NOBUO
IPC分类号： B21J13/02 , C23C14/06 , C23C14/08
摘要： PURPOSE:To obtain the high-strength metallic mold which withstands even severe dynamic high load with good productivity by providing a layer mixed with >=1 kinds of ions of group III to VI and VIII elements of periodic table on the surface in contact with a work. CONSTITUTION:The part which first comes into contact with a stock 2 in the corner parts of the metallic mold consisting of a male mold 1a and a female mold 1b for producing, for example, a tapered roller for a tapered roller bearing by cold forging of the stock 2 is formed with the mixing layer 3 by executing ion plantation. The method for forming the layer 3 is, for example, a dynamic mixing method or ion vapor phase deposition method. Vacuum vapor deposition and the ion implantation are simultaneously executed by using the ion acceleration energy lower than in an ordinary ion implantation method. The elements belonging to group III to VI and VIII, such as TiN, TaC, TiC, VC, BN, TiN, and Fe2N, are used alone or in combination of >=2 kinds as the ion species to be mixed.

4. 发明专利

JPH02303637A FORMING DIE AND ITS MANUFACTURE 失效
公开(公告)号：JPH02303637A
公开(公告)日：1990-12-17
申请号：JP12637089
申请日：1989-05-18
申请人： AGENCY IND SCIENCE TECHN , SUTAAROI SANGYO KK
发明人： SATO MAMORU , FUJII KANESHIGE , KIUCHI MASATO , CHIYATANIHARA AKIYOSHI , SHIMOITANI YOSHINOBU
IPC分类号： B21D37/01 , B21D37/20
摘要： PURPOSE:To obtain the forming die having high accuracy and a long service life by executing simultaneously ion implantation and vacuum deposition to the surface on which an object to be worked abuts, and forming a mixing layer provided with an amorphous metallic layer. CONSTITUTION:Ion implantation and vacuum deposition are executed simultaneously to the surface 4 on which at least an object to be worked for forming abuts of the upper and the lower dies 1, 2. As a result, a mixing layer provided with an amorphous metallic layer is formed on the forming dies 1, 2. The mixing layer is formed by implantation of an N ion and vapor deposition of Ti. In such a way, the surface layer being excellent in wear resistance can be provided on the die.

5. 发明专利

JPH01168857A FORMATION OF TITANIUM NITRIDE FILM 失效
公开(公告)号：JPH01168857A
公开(公告)日：1989-07-04
申请号：JP32639887
申请日：1987-12-23
申请人： AGENCY IND SCIENCE TECHN , MITSUBISHI ELECTRIC CORP
发明人： KIUCHI MASATO , SATO MAMORU , FUJII KANEYOSHI , YOSHIDA KOREKAZU , HASHIMOTO YOICHI
IPC分类号： C23C14/06 , C23C14/24 , C23C14/48
摘要： PURPOSE:To form the title TiN film contg. Ti2N crystal and having excellent adhesive strength and hardness by specifying the Ti vapor-deposition rate, accelerating voltage for N, and N input in the formation of the hard TiN film on the surface of a steel member by vacuum deposition. CONSTITUTION:The inside of a vacuum vessel 11 is evacuated from an exhaust port 10, and gaseous N is supplied at a low pressure from a gas inlet 8. The gaseous N2 particle is formed into positive ion by an electron shower from an electron radiation source 7, and the ion is accelerated by the accelerating voltage 6 impressed with a negative voltage of 1-80kV and projected on a substrate 1 to be treated. The Ti in a crucible 4 is heated by an electron-beam gun 3, vaporized, and deposited on the substrate 1. In this case, the Ti vapor deposition rate is controlled to 0.1-200Angstrom /sec and the irradiation amt. of N ion to 1X10 -1X10 ion/mm .sec, the ions consisting of 20-100% gaseous N2 and 0-80% inert gas are clustered, and the cluster is projected on the substrate.

6. 发明专利

JPS63206468A PRODUCTION OF THIN NITRIDE FILM HAVING CRYSTAL ORIENTABILITY CONTROLLED BY PROJECTION ANGLE OF ION BEAM 失效
公开(公告)号：JPS63206468A
公开(公告)日：1988-08-25
申请号：JP3837687
申请日：1987-02-20
申请人： AGENCY IND SCIENCE TECHN
发明人： KIUCHI MASATO , FUJII KANESHIGE , SATO MAMORU
IPC分类号： C23C14/32 , C30B29/38
摘要： PURPOSE:To form a thin nitride film having controlled crystal orientability on a substrate by adjusting the projection angle of a nitrogen-contg. ion beam and projecting the beam onto the substrate at the time of depositing metals such as Si, Al, and Ti by evaporation on the substrate. CONSTITUTION:At least one kind of metals such as Si, Al, Ti, B, Mo, Zr, Ga, W, and Hf are deposited by evaporation on the substrate 1 from a direction 7. The ion beam contg. nitrogen is projected to the substrate 1 from such a direction 5 where said beam attains the prescribed angle theta with the normal 3 of the substrate 1. The acceleration of the ion beam is set at about >=1kev and the degree of the pressure reduction at the time of forming the thin nitride film is set at about 5X10 -1X10 Torr. The ratio of the nitrogen atoms in the ion beam and the atoms of the evaporating metal is preferably about 1:0.5-20. The thin nitride film having the arbitrary crystal orientability is thereby formed on the substrate 1.

7. 发明专利

JPS61157674A MANUFACTURE OF HIGH HARDNESS BORON NITRIDE FILM 失效
公开(公告)号：JPS61157674A
公开(公告)日：1986-07-17
申请号：JP27864684
申请日：1984-12-29
申请人： AGENCY IND SCIENCE TECHN , KYOCERA CORP
发明人： SATO MAMORU , YAMAGUCHI KOICHI
IPC分类号： C23C14/00 , C23C14/06 , C23C14/22 , C23C14/24 , C23C16/34 , C23C16/44 , C23C16/452
摘要： PURPOSE:To form the titled film having high quality, by specifying total quantity of oxygen and carbon atoms in a reaction chamber, at forming the titled film on a base body by gas phase growth method in the reaction chamber. CONSTITUTION:Inner part of the reaction chamber 5 is maintained to a prescribed vacuum degree by a vacuum pump 6, a vapor deposition apparatus 10 is heated to vaporize a vaporizing source contg. boron. On the other hand, gaseous N2 is introduced to an ion source 2, ionized and accelerated by an accelerator 3, and only necessary ion species are selected by an analyzing magnet 4 and supplied to the chamber 5. Gaseous N2 is supplied to an arc discharge chamber 14, and N2 atoms excited by differential exhaustion are introduced to the chamber 5. Thereat, total quantity of O2 and N2 atoms is regulated to

8. 发明专利

JPH05193916A THIN TITANIUM NITRIDE FILM 失效
公开(公告)号：JPH05193916A
公开(公告)日：1993-08-03
申请号：JP3289492
申请日：1992-01-24
申请人： AGENCY IND SCIENCE TECHN , EBARA CORP
发明人： SATO MAMORU , FUJII KANESHIGE , HORINO YUJI , KIUCHI MASATO , CHIYATANIHARA AKIYOSHI , NAGASAKA HIROSHI
IPC分类号： C01B21/076 , C23C14/06 , C23C14/48
摘要： PURPOSE:To impart enough hardness and wear resistance for practical use as a ceramic coating to the thin titanium nitride film by incorporating a face- centered cubic TiN grain with the lattice constants controlled in a specified range into the thin film. CONSTITUTION:A face-centered cubic TiN crystal grain having 0.414-0.422nm lattice constants is incorporated into a thin titanium nitride film. The crystal of the TiN is preferably oriented toward the (111) face. When the substrate is coated, the substrate is initially cleaned by the sputtered nitride ion at about 10KV accelerating voltage, about 0.2mA/cm ionic current density and about 90 deg. irradiation angle. Titanium is then vapor-deposited while maintaining the film thickness, and the titanium is irradiated with a nitride ion beam at a specified current density to form a titanium nitride film. A titanium nitride film having a desired range of lattice constants is obtained by controlling the substrate temp., irradiation angle of the ion beam, accelerating voltage, vacuum of the film forming chamber, etc.

9. 发明专利

JPH01246159A REINFORCEMENT OF GLASS 失效
公开(公告)号：JPH01246159A
公开(公告)日：1989-10-02
申请号：JP7281088
申请日：1988-03-25
申请人： AGENCY IND SCIENCE TECHN
发明人： KIUCHI MASATO , MIYAMURA HIROSHI , SUMINO KOHEI , KAYAMA MASANORI , FUJII KANESHIGE , SATO MAMORU
IPC分类号： C03C3/06 , C03C21/00 , C03C23/00
摘要： PURPOSE:To obtain a glass excellent in radiation resistance, useful as e.g., a wear-resistant material by irradiating a glass having chemical bond between Si and O with N ion-contg. ionic beams to form a layer having bond between Si and N excellent in physical, mechanical and chemical properties. CONSTITUTION:Firstly, N ions are formed, through e.g., a high-frequency discharge, in a vacuum vessel e.g., 10 -10 Torr in pressure and >=10% in partial pressure of a gaseous N-contg. compound (e.g., N2, NH3). Thence, ion beams accelerated with an accelerating voltage of >=ca. 100V (pref. 1KV-5MV) are irradiated on the surface of a glass having chemical bond between Si and O (e.g., silica glass) heated up to the softening point (e.g., 0-1,000 deg.C) until a desired thickness of a layer having Si-N bond and a desired introduction of N-atom are accomplished, and furthermore, if needed, followed by heat treatment (e.g., at 100-150 deg.C for 5-200min.), thus reinforcing the glass.

10. 发明专利

JPH01172564A FORMATION OF FILM AT HIGH SPEED 失效
公开(公告)号：JPH01172564A
公开(公告)日：1989-07-07
申请号：JP33117387
申请日：1987-12-26
申请人： AGENCY IND SCIENCE TECHN , MITSUBISHI ELECTRIC CORP
发明人： KIUCHI MASATO , SATO MAMORU , FUJII KANEYOSHI , YOSHIDA KOREKAZU , HASHIMOTO YOICHI , MAEYAMA NORITAKA
IPC分类号： H01L21/203 , C23C14/24 , C23C14/32 , C23C14/34 , C23C14/48
摘要： PURPOSE:To form a metallic vacuum-deposited film at high speed without applying excessive energy to a vacuum deposition source by simultaneously irradiating the ions of an inert element at the time of vacuum-depositing a metal onto the surface of a work by a vacuum vapor deposition method. CONSTITUTION:The inside of a vacuum vessel 11 is evacuated through an outlet 10, and one kind among inert gases of Ar, Xe, Kr, Ne, etc., is introduced through a gas- introducing hole 8 to form a reduced-pressure atmosphere of the order of 10 torr. The inert gas is formed into positive ions by means of an electron shower from an electron radiation source 7 and then accelerated by means of an accelerating electrode 6 on which a negative voltage of 1-80kV is impressed, with which the surface of a substrate 2 is irradiated by 1X10 -1X10 ion/mm .sec quantity of irradiation. Simultaneously, a metal 5, such as Ti and Al, in a crucible 4 is heated and evaporated by means of an electron beam gun 3, by which a vacuum-deposited film of Ti or Al is formed at a speed as high as 5-200Angstrom /sec. By this method, the metallic vacuum- deposited film can be formed at high speed by means of inert gas ion irradiation without applying excessive energy to the metal 5 in the crucible and, as a result, the early damage of the crucible 4 due to excessive energy can be prevented.

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