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1. 发明专利

GB8916612D0 PRESS TOOL 未知
公开(公告)号：GB8916612D0
公开(公告)日：1989-09-06
申请号：GB8916612
申请日：1989-07-20
申请人： GRIFFIN KEVIN , DUNN STEVEN

2. 发明申请

WO2012167195A3 CHAMBER EXHAUST IN-SITU CLEANING FOR PROCESSING APPARATUSES 审中-公开
标题翻译：用于加工设备的室内排气清洗
公开(公告)号：WO2012167195A3
公开(公告)日：2013-05-02
申请号：PCT/US2012040604
申请日：2012-06-01
申请人： APPLIED MATERIALS INC , VERDICT GREGORY SCOTT , GRIFFIN KEVIN , FOX ALLEN GREGORY
发明人： VERDICT GREGORY SCOTT , GRIFFIN KEVIN , FOX ALLEN GREGORY
IPC分类号： H01L21/02
CPC分类号： C23C16/4412 , C23C16/4407 , C23C16/45557
摘要： Apparatuses and systems are disclosed for exhausting by-products from a processing chamber. In an embodiment, a dual exhaust system for removing by-products from a processing chamber includes a first exhaust line and a second exhaust line with each line having a pressure control valve and a particle trap for removing by-products. A portion of the first exhaust line may be coupled in parallel with the second exhaust line. The second exhaust line can be isolated from the first exhaust line and cleaned while the first exhaust line is removing by-products from the processing chamber or vice versa. In one embodiment, an exhaust system for removing by-products from a processing chamber includes an exhaust line and valves for removing the by-products. The valves are designed to operate at a high temperature such that the heated by-products are in a vapor phase while being removed through the exhaust line.
摘要翻译：公开了用于从处理室排出副产物的装置和系统。在一个实施例中，用于从处理室除去副产物的双排气系统包括第一排气管线和第二排气管线，每条管线具有压力控制阀和用于除去副产物的颗粒捕集器。第一排气管线的一部分可以与第二排气管线并联连接。第二排气管线可以与第一排气管线隔离，并且在第一排气管路从处理室中除去副产物的同时进行清洁，反之亦然。在一个实施例中，用于从处理室除去副产物的排气系统包括用于除去副产物的排气管线和阀。阀被设计为在高温下操作，使得加热的副产物处于汽相，同时通过排气管线被移除。

3. 发明申请

WO2013033428A3 IN SITU PROCESS KIT CLEAN FOR MOCVD CHAMBERS 审中-公开
标题翻译：现场加工成套工具为MOCVD房间清洁
公开(公告)号：WO2013033428A3
公开(公告)日：2013-04-25
申请号：PCT/US2012053186
申请日：2012-08-30
申请人： APPLIED MATERIALS INC , LU JIANG , CHUNG HUA , WANG YAN , SHEN KUAN CHIEN KERIS , DONG XIZI , DUBOUST ALAIN , HSU WEI-YUNG , GRIFFIN KEVIN S , OLGADO DONALD J K
发明人： LU JIANG , CHUNG HUA , WANG YAN , SHEN KUAN CHIEN KERIS , DONG XIZI , DUBOUST ALAIN , HSU WEI-YUNG , GRIFFIN KEVIN S , OLGADO DONALD J K
IPC分类号： H01L21/205 , H01L21/02 , H01L21/302
CPC分类号： H01L21/67115 , C23C16/4405
摘要： Embodiments of the invention include methods of in situ cleaning of deposited materials from the surfaces of processing chambers, e.g., MOCVD processing chambers. The cleaning process increases the time between preventative maintenance cleanings and reduces chamber down-time by targeting the removal of the layers deposited on the interior surfaces of the chamber body and/or liner, as well as the process kit components. The cleaning process occurs while shielding the showerhead and a carrier plate from at least some of the cleaning gases used during the cleaning process. To prevent chemical attack of the layers already deposited on the surface of the showerhead, and to prevent poisoning of the layers deposited after performing the cleaning process, the showerhead and the carrier plate are shielded from the cleaning gas by delivering an inert gas through the showerhead and across the surface of the carrier plate and/or cleaning plate during the cleaning.
摘要翻译：本发明的实施例包括从处理室例如MOCVD处理室的表面就地清洁沉积材料的方法。清洁过程增加了预防性维护清洁之间的时间，并通过针对去除沉积在腔室主体和/或衬里的内表面上的层以及处理套件组件来减少腔室停机时间。清洁过程发生的同时将喷头和承载板与清洁过程中使用的至少一些清洁气体隔离。为了防止已经沉积在喷头表面上的层的化学侵蚀，并且为了防止在执行清洁过程之后沉积的层的中毒，通过将惰性气体输送通过喷头来将喷头和承载板与清洁气体隔离并且在清洁期间越过承载板和/或清洁板的表面。

4. 发明申请

WO2010129289A3 DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
标题翻译：在原位清洗后用NH3净化MOCVD室的净化
公开(公告)号：WO2010129289A3
公开(公告)日：2011-02-24
申请号：PCT/US2010032592
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , KRYLIOUK OLGA , SU JIE , GRIFFIN KEVIN , JUN SUNG WON , NIJHAWAN SANDEEP , DONG XIZI , POON TZE , WASHINGTON LORI D , GRAYSON JACOB
发明人： KRYLIOUK OLGA , SU JIE , GRIFFIN KEVIN , JUN SUNG WON , NIJHAWAN SANDEEP , DONG XIZI , POON TZE , WASHINGTON LORI D , GRAYSON JACOB
IPC分类号： H01L21/02 , H01L21/205 , H01L33/02
CPC分类号： C23C16/301 , C23C16/4405 , C23C16/4408 , C30B25/00 , C30B29/40 , C30B29/406 , H01L33/007 , H01L33/0075
摘要： Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.
摘要翻译：本发明的实施例总体上涉及用于在基板在腔室中被处理以例如通过金属 - 氧化物形成III-V族材料之后从基板处理腔室的一个更多内部表面移除不想要的沉积堆积的方法和设备，有机化学气相沉积（MOCVD）沉积工艺。在一个实施例中，提供了一种用于从基板处理腔室的一个或多个内表面移除不希望的沉积积聚的方法。该方法包括在布置在衬底处理室中的衬底上沉积一个或多个含III族的层，将衬底转移出衬底处理室，并且将含卤素的气体脉动到衬底处理室中以除去至少一部分从衬底处理室的一个或多个内表面堆积不希望的沉积物。

5. 发明申请

WO2011017222A3 METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD 审中-公开
公开(公告)号：WO2011017222A3
公开(公告)日：2011-02-10
申请号：PCT/US2010/043940
申请日：2010-07-30
申请人： APPLIED MATERIALS, INC. , GRIFFIN, Kevin , KRYLIOUK, Olga , SU, Jie
发明人： GRIFFIN, Kevin , KRYLIOUK, Olga , SU, Jie
IPC分类号： H01L21/205
摘要： The present invention generally provides a method and apparatus for cleaning a showerhead of a deposition chamber, such as a metal organic chemical vapor deposition (MOCVD) chamber. In one embodiment, the showerhead is cleaned without exposing the chamber to the atmosphere outside of the chamber ( i.e., in situ cleaning). In one embodiment, flow of liquid coolant through a cooling system that is in fluid communication with the showerhead is redirected to bypass the showerhead, and the liquid coolant is drained from the showerhead. In one embodiment, any remaining coolant is flushed from the showerhead via a pressurized gas source. In one embodiment, the showerhead is then heated to an appropriate cleaning temperature. In one embodiment, the flow of liquid coolant from the cooling system is then redirected to the showerhead and the system is adjusted for continued processing. Thus, the entire showerhead cleaning process is performed with minimal change to the flow of coolant through the cooling system.

6. 发明申请

WO2010129289A2 DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
标题翻译：在现场清洁后使用NH3净化的MOCVD室的去除
公开(公告)号：WO2010129289A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/032592
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , SU, Jie , GRIFFIN, Kevin , JUN, Sung Won , NIJHAWAN, Sandeep , DONG, Xizi , POON, Tze , WASHINGTON, Lori, D. , GRAYSON, Jacob
发明人： KRYLIOUK, Olga , SU, Jie , GRIFFIN, Kevin , JUN, Sung Won , NIJHAWAN, Sandeep , DONG, Xizi , POON, Tze , WASHINGTON, Lori, D. , GRAYSON, Jacob
IPC分类号： H01L21/02 , H01L33/02 , H01L21/205
CPC分类号： C23C16/301 , C23C16/4405 , C23C16/4408 , C30B25/00 , C30B29/40 , C30B29/406 , H01L33/007 , H01L33/0075
摘要： Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.
摘要翻译：本发明的实施方案一般涉及用于在衬底在腔室中处理以形成例如III-V族材料之后，从衬底处理室的多个内表面去除不想要的沉积物积累的方法和装置，有机化学气相沉积（MOCVD）沉积工艺。在一个实施例中，提供了从衬底处理室的一个或多个内表面去除不想要的沉积积聚的方法。该方法包括在设置在衬底处理室中的衬底上沉积一个或多个含III族的层，将衬底转移到衬底处理室之外，并将含卤素的气体脉冲到衬底处理室中以去除至少一部分从衬底处理室的一个或多个内表面积聚不需要的沉积物。

7. 发明申请

WO2010124174A2 AMPOULE WITH INTEGRATED HYBRID VALVE 审中-公开
标题翻译：一体化混合阀
公开(公告)号：WO2010124174A2
公开(公告)日：2010-10-28
申请号：PCT/US2010/032184
申请日：2010-04-23
申请人： APPLIED MATERIALS, INC. , GRIFFIN, Kevin S.
发明人： GRIFFIN, Kevin S.
IPC分类号： H01L21/02 , F16K21/00
CPC分类号： C23C16/448 , C23C16/54 , Y10T137/3112 , Y10T137/7069 , Y10T137/877
摘要： Semiconductor manufacturing tools with chemical delivery systems, such as precursor distribution system, use reservoir assemblies as part of a distribution system. One reservoir assembly includes: a canister comprising at least one sidewall, a top, and a bottom encompassing an interior volume therein; an inlet port and an outlet port in fluid communication with the interior volume; an inlet valve for controlling fluid communication between the inlet port and the interior volume; and an outlet valve for controlling fluid communication between the outlet port and the interior volume, wherein at least one of the inlet valve or the outlet valve comprises a dual-function hybrid valve.
摘要翻译：具有化学输送系统（例如前体分配系统）的半导体制造工具使用储存器组件作为分配系统的一部分。一个储存器组件包括：包括至少一个侧壁，顶部和包围内部容积的底部的罐; 入口端口和与所述内部容积流体连通的出口; 入口阀，用于控制所述入口和所述内部容积之间的流体连通; 以及用于控制出口和内部容积之间的流体连通的出口阀，其中入口阀或出口阀中的至少一个包括双功能混合阀。

8. 发明申请

WO2014130673A1 APPARATUS AND METHODS FOR INJECTOR TO SUBSTRATE GAP CONTROL 审中-公开
标题翻译：装置和方法，用于注射气体控制
公开(公告)号：WO2014130673A1
公开(公告)日：2014-08-28
申请号：PCT/US2014/017399
申请日：2014-02-20
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , GRIFFIN, Kevin , GANGAKHEDKAR, Kaushal
发明人： YUDOVSKY, Joseph , GRIFFIN, Kevin , GANGAKHEDKAR, Kaushal
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458
CPC分类号： C23C16/52 , C23C16/45544 , C23C16/45551 , C23C16/4583 , H01L21/0228 , H01L21/0262 , H01L21/28556 , H01L22/10
摘要： Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.
摘要翻译：描述了其中晶片表面和气体分配组件之间的间隙保持均匀并具有已知厚度的半导体晶片的处理装置和方法。晶片定位在基座组件内，并且使用致动器将组件提升到气体分配组件。可以通过在晶片下方和/或上方产生流体轴承来将晶片提升到气体分配组件。

9. 发明申请

WO2012167195A2 CHAMBER EXHAUST IN-SITU CLEANING FOR PROCESSING APPARATUSES 审中-公开
标题翻译：用于加工设备的室内排气清洗
公开(公告)号：WO2012167195A2
公开(公告)日：2012-12-06
申请号：PCT/US2012/040604
申请日：2012-06-01
申请人： APPLIED MATERIALS, INC. , VERDICT, Gregory, Scott , GRIFFIN, Kevin , FOX, Allen, Gregory
发明人： VERDICT, Gregory, Scott , GRIFFIN, Kevin , FOX, Allen, Gregory
IPC分类号： H01L21/02
CPC分类号： C23C16/4412 , C23C16/4407 , C23C16/45557
摘要： Apparatuses and systems are disclosed for exhausting by-products from a processing chamber. In an embodiment, a dual exhaust system for removing by-products from a processing chamber includes a first exhaust line and a second exhaust line with each line having a pressure control valve and a particle trap for removing by-products. A portion of the first exhaust line may be coupled in parallel with the second exhaust line. The second exhaust line can be isolated from the first exhaust line and cleaned while the first exhaust line is removing by-products from the processing chamber or vice versa. In one embodiment, an exhaust system for removing by-products from a processing chamber includes an exhaust line and valves for removing the by-products. The valves are designed to operate at a high temperature such that the heated by-products are in a vapor phase while being removed through the exhaust line.
摘要翻译：公开了用于从处理室排出副产物的装置和系统。在一个实施例中，用于从处理室除去副产物的双排气系统包括第一排气管线和第二排气管线，每条管线具有压力控制阀和用于除去副产物的颗粒捕集器。第一排气管线的一部分可以与第二排气管线并联连接。第二排气管线可以与第一排气管线隔离，并且在第一排气管路从处理室中除去副产物的同时进行清洁，反之亦然。在一个实施例中，用于从处理室除去副产物的排气系统包括用于除去副产物的排气管线和阀。阀被设计为在高温下操作，使得加热的副产物处于汽相，同时通过排气管线被移除。

10. 发明申请

WO2012122331A3 PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS 审中-公开
标题翻译： P型III族氮化物材料的等离子体辅助MOCVD制备
公开(公告)号：WO2012122331A3
公开(公告)日：2012-11-22
申请号：PCT/US2012028187
申请日：2012-03-08
申请人： APPLIED MATERIALS INC , BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
发明人： BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
IPC分类号： H01L21/205 , H01L21/318
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/452 , C23C16/56 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L33/007
摘要： The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.
摘要翻译：描述了p型III族氮化物材料的等离子辅助金属有机化学气相沉积（MOCVD）制造。例如，制造p型III族氮化物材料的方法包括产生氮基等离子体。来自氮基等离子体的含氮物质在金属有机化学气相沉积（MOCVD）室中与III族前体和p型掺杂剂前体反应。然后在衬底上方形成包括p型掺杂剂的III族氮化物层。

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