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1. 发明授权

US07670918B2 Semiconductor device having impurity-doped resistor element 有权
标题翻译：具有杂质掺杂电阻元件的半导体器件
公开(公告)号：US07670918B2
公开(公告)日：2010-03-02
申请号：US12007720
申请日：2008-01-15
申请人： Yuko Fukami , Ryuichiro Abe
发明人： Yuko Fukami , Ryuichiro Abe
IPC分类号： H01L21/20
CPC分类号： G01F1/6845 , H01L28/20
摘要： Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1×1020/cm3 to suppress a resistance change by aging especially at a temperature higher than 310° C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4×1019/cm3 to 1×1020/cm3, and more preferably in a range from 7×1019/cm3 to 1×1020/cm3. As the impurity, N-type impurity such as phosphorus or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.
摘要翻译：通过将杂质掺杂到诸如绝缘体上硅衬底之类的衬底上形成的单晶膜中形成电阻元件。具有这种电阻元件的半导体器件例如用作检测气流量的检测器。单晶硅中的杂质浓度低于1×10 10 / cm 3，以防止老化时的电阻变化，特别是在高于310℃的温度下。为了获得电阻元件的高温系数以及低电阻通过老化改变，杂质浓度设定在4×1019 / cm3〜1×1020 / cm3的范围内，更优选在7×1019 / cm3〜1×1020 / cm3的范围内。作为杂质，可以使用诸如磷的N型杂质或诸如硼的P型杂质。优选使用低扩散系数的杂质通过老化获得低电阻变化。

2. 发明申请

US20080188027A1 Semiconductor device having impurity-doped resistor element 有权
标题翻译：具有杂质掺杂电阻元件的半导体器件
公开(公告)号：US20080188027A1
公开(公告)日：2008-08-07
申请号：US12007720
申请日：2008-01-15
申请人： Yuko Fukami , Ryuichiro Abe
发明人： Yuko Fukami , Ryuichiro Abe
IPC分类号： H01L21/02
CPC分类号： G01F1/6845 , H01L28/20
摘要： Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1×1020/cm3 to suppress a resistance change by aging especially at a temperature higher than 310° C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4×1019/cm3 to 1×1020/cm3, and more preferably in a range from 7×1019/cm3 to 1×1020/cm3. As the impurity, N-type impurity such as phosphor or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.
摘要翻译：通过将杂质掺杂到诸如绝缘体上硅衬底之类的衬底上形成的单晶膜中形成电阻元件。具有这种电阻元件的半导体器件例如用作检测气流量的检测器。使单晶硅中的杂质浓度低于1×10 20 / cm 3，以通过老化特别是在高于310℃的温度下抑制电阻变化。为了获得电阻元件的高温系数以及通过老化的低电阻变化，杂质浓度设定在4×10 19 / cm 3〜1×10 -6以下的范围内 > 20 / cm 3，更优选在7×10 19 / cm 3至1×10 20的范围内， / SUP> / cm 3。作为杂质，可以使用诸如磷的N型杂质或诸如硼的P型杂质。优选使用低扩散系数的杂质通过老化获得低电阻变化。

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