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1. 发明授权

US07132672B2 Faraday dose and uniformity monitor for plasma based ion implantation 有权
标题翻译：法拉第剂量和均匀度监测器用于等离子体离子注入
公开(公告)号：US07132672B2
公开(公告)日：2006-11-07
申请号：US10817755
申请日：2004-04-02
申请人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。狭窄的孔径可以减少法拉第杯开口内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

2. 发明申请

US20050223991A1 Faraday dose and uniformity monitor for plasma based ion implantation 有权
标题翻译：法拉第剂量和均匀度监测器用于等离子体离子注入
公开(公告)号：US20050223991A1
公开(公告)日：2005-10-13
申请号：US10817755
申请日：2004-04-02
申请人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244 , H01J37/32 , C23C14/48
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。狭窄的孔径可以减少法拉第杯开口内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

3. 发明申请

US20090124066A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 有权
公开(公告)号：US20090124066A1
公开(公告)日：2009-05-14
申请号：US12269344
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

4. 发明授权

US08003498B2 Particle beam assisted modification of thin film materials 有权
标题翻译：粒子束辅助修饰薄膜材料
公开(公告)号：US08003498B2
公开(公告)日：2011-08-23
申请号：US12269344
申请日：2008-11-12
申请人： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
摘要翻译：公开了用于处理基板的方法的几个实例。在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体，邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

5. 发明申请

US20090124065A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
标题翻译：细粒束辅助修饰薄膜材料
公开(公告)号：US20090124065A1
公开(公告)日：2009-05-14
申请号：US12269327
申请日：2008-11-12
申请人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
发明人： Jonathan G. ENGLAND , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
IPC分类号： H01L21/20
CPC分类号： H01L21/02689 , C30B1/023 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02532 , H01L21/268 , H01L31/0747 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.
摘要翻译：公开了用于处理衬底的方法的几个实例。在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。

6. 发明申请

US20120000606A1 PLASMA UNIFORMITY SYSTEM AND METHOD 审中-公开
标题翻译：等离子体均匀系统和方法
公开(公告)号：US20120000606A1
公开(公告)日：2012-01-05
申请号：US12829497
申请日：2010-07-02
申请人： Rajesh Dorai , Kamal Hadidi , Mayur Jagtap
发明人： Rajesh Dorai , Kamal Hadidi , Mayur Jagtap
IPC分类号： C23F1/08 , C23C16/50 , H05B31/02 , C23C16/458
CPC分类号： H01J37/32633 , H01J37/32412 , H01J37/32532
摘要： A plasma processing tool comprises a plasma chamber configured to generate a plasma from a gas introduced into the chamber where the generated plasma has an electron plasma frequency. A plurality of electrodes disposed within the chamber. Each of the electrodes configured to create a rapidly-rising-electric-field pulse in a portion of the plasma contained in the chamber. Each of said rapidly-rising-electric-field pulses having a rise time substantially equal to or less than the inverse of the electron plasma frequency and a duration of less than the inverse of the ion plasma frequency. In this manner, the electron energy distribution in the generated plasma may be spatially and locally modified thereby affecting the density, composition and temperature of the species in the plasma and consequently the uniformity of the density and composition of ions and neutrals directed at a target substrate.
摘要翻译：等离子体处理工具包括等离子体室，其被配置为从引入室中的气体产生等离子体，其中产生的等离子体具有电子等离子体频率。设置在室内的多个电极。每个电极被配置为在腔室中包含的等离子体的一部分中产生快速上升的电场脉冲。所述快速上升电场脉冲中的每一个具有基本上等于或小于电子等离子体频率的倒数的上升时间和小于离子等离子体频率的倒数的持续时间。以这种方式，所产生的等离子体中的电子能量分布可以在空间上和局部改变，从而影响等离子体中物质的密度，组成和温度，从而影响靶向靶基质的离子和中性粒子的密度和组成的均匀性。

7. 发明申请

US20090309041A1 TECHNIQUES FOR PROVIDING A MULTIMODE ION SOURCE 有权
标题翻译：提供多个离子源的技术
公开(公告)号：US20090309041A1
公开(公告)日：2009-12-17
申请号：US12137225
申请日：2008-06-11
申请人： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
发明人： Peter Kurunczi , Rajesh Dorai , Costel Biloiu , Wilhelm Platow
IPC分类号： H01J27/02 , G21K5/00
CPC分类号： H01J37/08 , H01J27/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/0817 , H01J2237/082 , H01J2237/0827 , H01J2237/304
摘要： Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
摘要翻译：公开了提供多模离子源的技术。在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

8. 发明申请

US20060236931A1 Tilted Plasma Doping 审中-公开
标题翻译：倾斜等离子体兴奋剂
公开(公告)号：US20060236931A1
公开(公告)日：2006-10-26
申请号：US10908009
申请日：2005-04-25
申请人： Vikram Singh , James Buff , Rajesh Dorai
发明人： Vikram Singh , James Buff , Rajesh Dorai
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32009 , H01J37/32752
摘要： A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
摘要翻译：等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。光栅位于腔室中。用于支撑靶的压板位于腔室中。光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。

9. 发明申请

US20120256614A1 TECHNIQUE FOR LIMITING FAULT CURRENT TRANSMISSION 审中-公开
标题翻译：限制故障电流传输的技术
公开(公告)号：US20120256614A1
公开(公告)日：2012-10-11
申请号：US13399658
申请日：2012-02-17
申请人： Frank Sinclair , Rajesh Dorai
发明人： Frank Sinclair , Rajesh Dorai
IPC分类号： H02H9/02 , H01F38/00 , H01F27/28 , H01F17/04 , H01F27/24 , B82Y15/00
CPC分类号： H02H9/021 , H01F38/023
摘要： A technique for limiting fault current transmission is disclosed. In one particular exemplary embodiment, the technique may be realized with a fault current limiter comprising a core having at least first easy axis and a hard axis; and a first coil wound around the core, the first coil configured to carry current. In some embodiment, the easy axis of the core may be aligned with H fields generated by the current transmitted through the first coil.
摘要翻译：公开了限制故障电流传输的技术。在一个特定的示例性实施例中，该技术可以利用包括具有至少第一容易轴和硬轴的芯的故障限流器来实现; 以及围绕所述芯缠绕的第一线圈，所述第一线圈构造成承载电流。在一些实施例中，芯的容易轴可以与通过第一线圈传输的电流产生的H场对准。

10. 发明授权

US07767986B2 Method and apparatus for controlling beam current uniformity in an ion implanter 有权
标题翻译：用于控制离子注入机中束流均匀性的方法和装置
公开(公告)号：US07767986B2
公开(公告)日：2010-08-03
申请号：US12143144
申请日：2008-06-20
申请人： Rajesh Dorai , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
发明人： Rajesh Dorai , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
IPC分类号： H01J37/08 , H01J37/15 , H01J27/02
CPC分类号： H01J37/3171 , H01J37/04 , H01J37/08 , H01J37/09 , H01J2237/024 , H01J2237/0455 , H01J2237/08 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
摘要： An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.
摘要翻译：一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。多个致动器连接到多个电极段，用于移动一个或多个段。通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

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