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    • 3. 发明申请
    • METHOD FOR MANUFACTURING HETEROSTRUCTURES
    • 制造异体结构的方法
    • WO2009095380A8
    • 2009-11-05
    • PCT/EP2009050878
    • 2009-01-27
    • SOITEC SILICON ON INSULATORRADU IONUTKONONCHUK OLEGBOURDELLE KONSTANTIN
    • RADU IONUTKONONCHUK OLEGBOURDELLE KONSTANTIN
    • H01L21/20H01L21/762
    • H01L21/76254H01L21/2007H01L21/76256
    • The invention relates to a method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method is remarkable in that it consists of : - forming and/or depositing a silicon oxide Si?2 layer (3, 4) with a thickness of less than or equal to 25 nanometers on a donor substrate (1) and/or on a receiver substrate (2), - submitting this or these substrates (1, 2) to a treatment at a temperature comprised between 900°C and 1,200°C, under an atmosphere containing at least argon and/or hydrogen and no oxygen, in order to form in said silicon oxide layer (3, 4), trapping holes (30, 40), - bonding both substrates (1, 2), - carrying out annealing for reinforcing the bonding interface (5) at low temperature, said trapping holes (30, 40) being capable of retaining the gas species present at this interface, - transferring a portion (14) of the donor substrate (1), onto the receiver substrate (2).
    • 本发明涉及一种用于制造用于电子学,光学或光电子领域的异质结构的方法。 该方法是显着的,其包括:在施主衬底(1)上和/或在其上形成和/或沉积厚度小于或等于25纳米的氧化硅Si 2层(3,4) 接收器基板(2), - 在至少包含氩和/或氢而不含氧的气氛下,将该基板或这些基板(1,2)在包含在900℃和1200℃之间的温度下进行处理 在所述氧化硅层(3,4)中形成捕集孔(30,40), - 结合两个基板(1,2), - 在低温下执行用于加强所述接合界面(5)的退火,所述捕获 孔(30,40)能够保留存在于该界面处的气体物质, - 将施主衬底(1)的一部分(14)转移到接收器基板(2)上。
    • 4. 发明申请
    • METHOD FOR MANUFACTURING HETEROSTRUCTURES
    • 制造异体结构的方法
    • WO2009095380A1
    • 2009-08-06
    • PCT/EP2009/050878
    • 2009-01-27
    • S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIESRADU, IonutKONONCHUK, OlegBOURDELLE, Konstantin
    • RADU, IonutKONONCHUK, OlegBOURDELLE, Konstantin
    • H01L21/20H01L21/762
    • H01L21/76254H01L21/2007H01L21/76256
    • The invention relates to a method for manufacturing heterostructures for applications in the fields of electronics, optics or opto-electronics. This method is remarkable in that it consists of : - forming and/or depositing a silicon oxide Siθ2 layer (3, 4) with a thickness of less than or equal to 25 nanometers on a donor substrate (1) and/or on a receiver substrate (2), - submitting this or these substrates (1, 2) to a treatment at a temperature comprised between 9000C and 1,2000C, under an atmosphere containing at least argon and/or hydrogen and no oxygen, in order to form in said silicon oxide layer (3, 4), trapping holes (30, 40), - bonding both substrates (1, 2), - carrying out annealing for reinforcing the bonding interface (5) at low temperature, said trapping holes (30, 40) being capable of retaining the gas species present at this interface, - transferring a portion (14) of the donor substrate (1), onto the receiver substrate (2).
    • 本发明涉及一种用于制造用于电子学,光学或光电子领域的异质结构的方法。 该方法是显着的,其包括:在施主衬底(1)上和/或在其上形成和/或沉积厚度小于或等于25纳米的氧化硅Si 2层(3,4) 接收器基板(2),在含有至少氩气和/或氢气和不含氧气体的气氛下,将该基板或这些基板(1,2)置于950℃至1200℃的温度下进行处理,以便 在所述氧化硅层(3,4)中形成捕集孔(30,40), - 结合两个基板(1,2), - 在低温下执行用于加强所述接合界面(5)的退火,所述捕集孔( 30,40)能够保留存在于该界面处的气体种类, - 将施主衬底(1)的一部分(14)转移到接收衬底(2)上。
    • 8. 发明申请
    • METHODS OF TRANSFERRING LAYERS OF MATERIAL IN 3D INTEGRATION PROCESSES AND RELATED STRUCTURES AND DEVICES
    • 在3D集成过程中传输材料层的方法及相关结构与设备
    • WO2013045985A1
    • 2013-04-04
    • PCT/IB2012/001578
    • 2012-08-13
    • SOITECSADAKA, MariamRADU, Ionut
    • SADAKA, MariamRADU, Ionut
    • H01L21/762
    • H01L21/76254H01L27/0688
    • Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the implanted ions may be formed to vary laterally across the generally planar weakened zone. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods.
    • 将半导体材料层从第一施主结构转移到第二结构的方法包括在由其中的注入离子限定的第一施主结构内形成大致平坦的弱化区。 注入离子的浓度和注入离子的元素组成中的至少一种可以形成为跨越大致平坦的弱化区横向变化。 第一施主结构可以结合到第二结构,并且第一施主结构可以沿着大致平坦的弱化区断裂,留下半导体材料层与第二结构结合。 可以通过在半导体材料的转移层上形成有源器件结构来制造半导体器件。 使用所述方法制造半导体结构。