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    • 2. 发明申请
    • Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
    • 铌酸锂或钽酸锂的单晶及其光学元件,以及用于生产氧化物单晶的工艺和设备
    • US20010001944A1
    • 2001-05-31
    • US09754187
    • 2001-01-05
    • NATIONAL INSTITUTE FOR RESEARCH IN INORGANIC MATERIALS
    • Kenji KitamuraYasunori FurukawaShunji TakekawaShigeyuki Kimura
    • C30B015/00
    • C30B15/12C30B15/00C30B29/30Y10T117/10
    • A single crystal of lithium niobate or tantalate, grown from a melt of a composition having an excessive Li over its stoichiometric composition, and having a molar fraction of Li2O/(Nb2O5nullLi2O) or Li2O/ (Ta2O5nullLi2O) within a range of at least 0.490 and less than 0.500, wherein at least one element selected from the group consisting of Mg, Zn, Sc and In is contained in an amount of from 0.1 to 3.0 mol % based on the total amount of the at least one element, Nb and Li, or the total amount of the at least one element, Ta and Li. A process for producing an oxide single crystal by rotation pulling by means of a double crucible made of a noble metal, consisting of an outer crucible made of a noble metal, and a cylindrical inner crucible for intersecting the surface of a melt in the outer crucible and connecting the melt at the bottom of the melt, which process comprises pulling a single crystal from the inner crucible while directly measuring the weight of the growing crystal for growing, simultaneously supplying a gas into a closed container, supplying a powder material preserved in the closed container between the outer crucible and the inner crucible through a supply tube in the same amount by weight as the crystal growth, and growing the crystal by rotating the double crucible.
    • 从具有超过其化学计量组成的具有过量的Li的组合物的熔体生长并且具有Li 2 O /(Nb 2 O 5 + Li 2 O)或Li 2 O /(Ta 2 O 5 + Li 2 O)的摩尔分数的铌酸锂或钽酸锂的单晶, 至少0.490且小于0.500,其中选自Mg,Zn,Sc和In中的至少一种元素的含量相对于至少一种元素的总量为0.1至3.0mol% Nb和Li,或至少一种元素Ta和Li的总量。 通过由贵金属制成的双坩埚通过旋转拉制制造氧化物单晶的方法,由贵金属制的外坩埚和用于与外坩埚中的熔体表面相交的圆柱形内坩埚 并且将熔体连接在熔体的底部,该方法包括从内坩埚中拉出单晶,同时直接测量生长晶体的重量,同时将气体供应到密闭容器中,供应保存在熔体中的粉末材料 通过供给管与外坩埚和内坩埚之间的密封容器的重量与晶体生长量相同,并且通过旋转双坩埚使晶体生长。
    • 6. 发明申请
    • Silicon nitride sintered products and processes for their production
    • 氮化硅烧结产品及其生产工艺
    • US20020045530A1
    • 2002-04-18
    • US09796430
    • 2001-03-02
    • National Institute for Research in Inorganic Materials
    • Naoto HirosakiToshiyuki NishimuraYoshinobu YamamotoMamoru Mitomo
    • C04B035/587C04B035/584
    • C04B35/584C04B35/5935
    • A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a LU4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % LU2O3 and point C: 16 mol % SiO2-84 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4nullSiO2nullLU2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % LU2O3 and point C: 60 mol % SiO2-40 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4-SiO2-LU2O3 system.
    • 一种包含氮化硅晶粒和晶界相的氮化硅烧结产品,其中晶界相基本上由LU4Si2O7N2晶相的单相组成,氮化硅烧结产品的组成是三角形ABC内或其周围的组成 在Si3N4-SiO2-LU2O3系统的三元体系相图中,具有点A:Si 3 N 4,点B:28摩尔%SiO 2 -S72摩尔%LU 2 O 3和点C:16摩尔%SiO 2 -S84摩尔%LU 2 O 3作为三个顶点 。 还公开了包含氮化硅晶粒和氮氧化物的晶界相的氮化硅烧结体,其中烧结体的组成是具有点A:Si 3 N 4,点B:40摩尔%SiO 2〜60摩尔的三角形组成 在一个Si3N4-SiO2-LU2O3体系的三元体系相图中,%LU2O3和点C:60mol%SiO2-40mol%LU2O3作为三个顶点。