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1. 发明申请

US20020045530A1 Silicon nitride sintered products and processes for their production 失效
标题翻译：氮化硅烧结产品及其生产工艺
公开(公告)号：US20020045530A1
公开(公告)日：2002-04-18
申请号：US09796430
申请日：2001-03-02
申请人： National Institute for Research in Inorganic Materials
发明人： Naoto Hirosaki , Toshiyuki Nishimura , Yoshinobu Yamamoto , Mamoru Mitomo
IPC分类号： C04B035/587 , C04B035/584
CPC分类号： C04B35/584 , C04B35/5935
摘要： A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a LU4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % LU2O3 and point C: 16 mol % SiO2-84 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4nullSiO2nullLU2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % LU2O3 and point C: 60 mol % SiO2-40 mol % LU2O3, as three apexes, in a ternary system phase diagram of a Si3N4-SiO2-LU2O3 system.
摘要翻译：一种包含氮化硅晶粒和晶界相的氮化硅烧结产品，其中晶界相基本上由LU4Si2O7N2晶相的单相组成，氮化硅烧结产品的组成是三角形ABC内或其周围的组成在Si3N4-SiO2-LU2O3系统的三元体系相图中，具有点A：Si 3 N 4，点B：28摩尔％SiO 2 -S72摩尔％LU 2 O 3和点C：16摩尔％SiO 2 -S84摩尔％LU 2 O 3作为三个顶点。还公开了包含氮化硅晶粒和氮氧化物的晶界相的氮化硅烧结体，其中烧结体的组成是具有点A：Si 3 N 4，点B：40摩尔％SiO 2〜60摩尔的三角形组成在一个Si3N4-SiO2-LU2O3体系的三元体系相图中，％LU2O3和点C：60mol％SiO2-40mol％LU2O3作为三个顶点。

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