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1. 发明申请

US20100197137A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100197137A1
公开(公告)日：2010-08-05
申请号：US12393254
申请日：2009-02-26
申请人： Masahiro SUMIYA , Motohiro TANAKA , Kousa HIROTA
发明人： Masahiro SUMIYA , Motohiro TANAKA , Kousa HIROTA
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/32136 , H01J37/32935 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on a surface thereof a film composed of a metal of the same kind as the metal substance, is processed and particles of the metal are deposited on an inner wall of said processing chamber.
摘要翻译：等离子体处理装置包括布置在真空容器中的处理室。使用在处理室中形成的等离子体来处理放置在处理室中的样品台上的晶片。在蚀刻由金属物质和下面的氧化物膜或具有高介电常数的材料构成的晶片上设置的膜层之前，在其表面上设置由与金属物质相同种类的金属构成的膜的另一晶片，并且金属的颗粒沉积在所述处理室的内壁上。

2. 发明申请

US20060196605A1 Method and apparatus for plasma processing 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060196605A1
公开(公告)日：2006-09-07
申请号：US11190839
申请日：2005-07-28
申请人： Eiji Ikegami , Kunihiko Koroyasu , Tadamitsu Kanekiyo , Masahiro Sumiya
发明人： Eiji Ikegami , Kunihiko Koroyasu , Tadamitsu Kanekiyo , Masahiro Sumiya
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32935
摘要： In processing a semiconductor device, foreign particles that may cause defects are reduced to improve production yield without decreasing availability of a semiconductor manufacturing apparatus. The apparatus comprises a mechanism operable to control an ion sheath 32w on an electrode 14 for mounting a wafer 2 and an ion sheath 32f on a member 141 mounted on the periphery of the electrode 14. The thickness of the ion sheath 32f is made smaller than the thickness of the ion sheath 32w to provide a slope of ion sheath 32s near the edge of the wafer 2, thereby causing ions 31 to be obliquely incident on the wafer edge to reduce deposition film on the wafer edge.
摘要翻译：在半导体器件的处理中，可能引起缺陷的异物会降低，从而提高生产率而不降低半导体制造装置的可用性。该装置包括一个可操作的机构，用于控制电极14上的离子鞘32w，用于将晶片2和离子鞘32f安装在安装在电极14周围的构件141上。离子鞘32f的厚度为使离子鞘32 w的厚度小于晶片2的边缘附近的离子鞘32 s的斜率，从而使离子31倾斜入射在晶片边缘上，以减少晶片边缘上的沉积膜。

3. 发明授权

US07029594B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07029594B2
公开(公告)日：2006-04-18
申请号：US10658398
申请日：2003-09-10
申请人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
发明人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
IPC分类号： G01R31/00 , H01L21/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
摘要翻译：一种等离子体处理方法，用于对处理气体供给装置将处理气体进入真空处理室的真空处理室内的待处理物体进行等离子体处理，将晶片电极置于真空处理室内，以安装物体为了进行处理，晶片偏置功率发生器对晶片电极施加自偏压，等离子体发生器在真空处理室内产生等离子体。等离子体处理方法使在任意电压下对物体产生的高频电压的电压波形的正侧电压或负侧电压平坦化。

4. 发明申请

US20050155711A1 Plasma processing apparatus and method with controlled biasing functions 审中-公开
标题翻译：具有受控偏置功能的等离子体处理装置和方法
公开(公告)号：US20050155711A1
公开(公告)日：2005-07-21
申请号：US11053236
申请日：2005-02-09
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , C23F1/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Accordingly, current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
摘要翻译：使用等离子体处理诸如半导体器件的样品表面的处理技术。施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

5. 发明申请

US20080068774A1 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20080068774A1
公开(公告)日：2008-03-20
申请号：US11699067
申请日：2007-01-29
申请人： Masahiro Sumiya , Tsutomu Iida
发明人： Masahiro Sumiya , Tsutomu Iida
IPC分类号： H05F3/00
CPC分类号： H01L21/67069 , H01J37/32091 , H01J2237/2001 , H01J2237/2007 , H01L21/6833
摘要： A plasma processing method using a plasma processing apparatus comprising a vacuum processing chamber, a substrate electrode having an electrostatic chucking film for chucking a material to be processed, an electrostatic chucking DC power supply and a substrate bias high-frequency power supply connected to the substrate electrode, and a plasma generating unit for generating the plasma in the vacuum processing chamber. The high-frequency voltage Vpp applied to the substrate electrode is monitored, and based on the Vpp signal thus monitored, the output voltage of the electrostatic chucking DC power supply is controlled thereby to maintain the voltage applied on the electrostatic chucking film at the desired value while at the same time controlling the output of the substrate bias high-frequency power supply in ramp with time.
摘要翻译：一种使用等离子体处理装置的等离子体处理方法，所述等离子体处理装置包括真空处理室，具有用于夹持待处理材料的静电夹持膜的基板电极，静电夹持DC电源和连接到所述基板的基板偏置高频电源电极和用于在真空处理室中产生等离子体的等离子体产生单元。监视施加到基板电极的高频电压Vpp，并且基于如此监视的Vpp信号，控制静电吸盘直流电源的输出电压，从而将施加在静电吸附膜上的电压保持在期望值同时在时间上控制斜坡输出的衬底偏置高频电源。

6. 发明申请

US20070181254A1 Plasma processing apparatus with resonance countermeasure function 审中-公开
标题翻译：具有共振对策功能的等离子体处理装置
公开(公告)号：US20070181254A1
公开(公告)日：2007-08-09
申请号：US11362177
申请日：2006-02-27
申请人： Tsutomu Iida , Ryoji Nishio , Yutaka Omoto , Masahiro Sumiya
发明人： Tsutomu Iida , Ryoji Nishio , Yutaka Omoto , Masahiro Sumiya
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32082
摘要： A plasma processing apparatus has a processing chamber connected to an exhaust system so that the inside pressure can be reduced, a gas feeding unit for supplying gas to the processing chamber, a wafer, and a substrate electrode on which the wafer can be placed. The plasma processing apparatus also has an antenna electrode provided in opposition to the substrate electrode to generate plasma, a plasma generating high-frequency power supply connected to the antenna electrode, and a wafer biasing power supply connected to the substrate electrode. In addition, a coaxial line and a coaxial waveguide are optimized by using a coaxial model, and a voltage measuring circuit is mounted right under the coaxial line.
摘要翻译：等离子体处理装置具有连接到排气系统的处理室，从而可以减小内部压力，用于向处理室供应气体的气体供给单元，晶片和可以放置晶片的基板电极。等离子体处理装置还具有与基板电极相对设置的天线电极以产生等离子体，连接到天线电极的等离子体产生高频电源以及连接到基板电极的晶片偏置电源。另外，同轴线和同轴波导通过使用同轴型号进行优化，电压测量电路安装在同轴线的正下方。

7. 发明授权

US06875366B2 Plasma processing apparatus and method with controlled biasing functions 失效
标题翻译：具有受控偏置功能的等离子体处理装置和方法
公开(公告)号：US06875366B2
公开(公告)日：2005-04-05
申请号：US09946491
申请日：2001-09-06
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , H01L21/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Therefore, the current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
摘要翻译：使用等离子体处理诸如半导体器件的样品表面的处理技术。施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

8. 发明授权

US06777037B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06777037B2
公开(公告)日：2004-08-17
申请号：US09946626
申请日：2001-09-06
申请人： Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
发明人： Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
IPC分类号： H05H102
CPC分类号： H01J37/32192 , C23C16/515
摘要： A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.
摘要翻译：提供等离子体处理方法和装置，用于通过等离子体的作用来处理半导体器件等的表面。通过在等离子体产生的指定的关闭周期内接通和关断用于产生等离子体的高频电力来执行脉冲等离子体放电，以将正电荷和负电荷的流入量控制在设备图案的稀疏和致密部分并抑制栅氧化膜上的电位。因此，可以进行不具有充电损坏的高精度蚀刻工艺。

9. 发明授权

US5886473A Surface wave plasma processing apparatus 失效
标题翻译：表波等离子体处理装置
公开(公告)号：US5886473A
公开(公告)日：1999-03-23
申请号：US921364
申请日：1997-08-29
申请人： Seiichi Watanabe , Masahiro Sumiya , Muneo Furuse , Hitoshi Tamura
发明人： Seiichi Watanabe , Masahiro Sumiya , Muneo Furuse , Hitoshi Tamura
IPC分类号： H05H1/46 , C23C14/35 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/027 , H01L21/205 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32238 , H01J37/32192
摘要： A coaxial passage for supplying microwaves is vertically provided over a dielectric window forming part of a processing chamber, and a conductor plate for transmitting the microwaves is arranged over the dielectric window which is positioned on the outer circumference of the coaxial passage. A microwave transmission passage can be formed between the surface of a plasma so produced as to have a critical electron density n.sub.c, and the conductor plate thereby to transmit microwaves without any reflection along the dielectric window uniformly from the center to the outer circumference.
摘要翻译：用于提供微波的同轴通道垂直设置在形成处理室的一部分的电介质窗上，并且用于传输微波的导体板布置在位于同轴通道的外圆周上的电介质窗上。可以在等离子体的表面之间形成微波传输通道，使其产生具有临界电子密度nc，并且导体板从而从中心到外周均匀地沿着电介质窗口不间断地传输微波。

10. 发明申请

US20130024035A1 POWER SUPPLY SYSTEM 有权
标题翻译：电源系统
公开(公告)号：US20130024035A1
公开(公告)日：2013-01-24
申请号：US13554553
申请日：2012-07-20
申请人： Akira ITO , Junichirou Kanamori , Mitsuru Fujita , Tatsuya Suzuki , Shinkichi Inagaki , Masahiro Sumiya , Takuma Yamaguchi
发明人： Akira ITO , Junichirou Kanamori , Mitsuru Fujita , Tatsuya Suzuki , Shinkichi Inagaki , Masahiro Sumiya , Takuma Yamaguchi
IPC分类号： G06F1/26
CPC分类号： B60L11/1844 , B60L3/12 , B60L11/1816 , B60L11/184 , B60L11/1842 , B60L11/1846 , B60L2230/16 , B60L2230/22 , B60L2240/66 , Y02E60/721 , Y02T10/7005 , Y02T10/7088 , Y02T10/7291 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/163 , Y02T90/169 , Y04S10/126 , Y04S30/14
摘要： A power supply system for supplying a grid power to a building includes a power generator, a power storing device, and a power controller. The power generator generates off-grid power from a predetermined energy. The power storing device stores the grid power and the off-grid power and supplies the stored power to the building. The power controller controls consumptions of the grid power and the off-grid power. The power controller calculates predicted consumption data related to power consumed in the building and predicted generation data related to power generated by the power generator. The power controller calculates a charging-discharging schedule for the power storing device based on the predicted consumption data and the predicted generation data by formulating the charging-discharging schedule as a mixed integer programming problem.
摘要翻译：用于向建筑物供电的供电系统包括发电机，蓄电装置和电力控制器。发电机从预定的能量产生离网电力。蓄电装置存储电网电力和离网电力，并将存储的电力提供给建筑物。功率控制器控制电网功率和离网功率的消耗。功率控制器计算与建筑物中消耗的功率相关的预测消耗数据和与由发电机产生的功率相关的预测的生成数据。功率控制器基于预测的消耗数据和预测的生成数据，通过将充电 - 放电时间表作为混合整数规划问题来计算蓄电装置的充电 - 放电时间表。

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