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1. 发明授权

US08236701B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08236701B2
公开(公告)日：2012-08-07
申请号：US12393254
申请日：2009-02-26
申请人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
发明人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01J37/32935 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on a surface thereof a film composed of a metal of the same kind as the metal substance, is processed and particles of the metal are deposited on an inner wall of said processing chamber.
摘要翻译：等离子体处理装置包括布置在真空容器中的处理室。使用在处理室中形成的等离子体来处理放置在处理室中的样品台上的晶片。在蚀刻由金属物质和下面的氧化物膜或具有高介电常数的材料构成的晶片上设置的膜层之前，在其表面上设置由与金属物质相同种类的金属构成的膜的另一晶片，并且金属的颗粒沉积在所述处理室的内壁上。

2. 发明申请

US20120252200A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120252200A1
公开(公告)日：2012-10-04
申请号：US13524914
申请日：2012-06-15
申请人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
发明人： Masahiro Sumiya , Motohiro Tanaka , Kousa Hirota
IPC分类号： H01L21/28
CPC分类号： H01L21/32136 , H01J37/32935 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on surface thereof a film composed of a metal of the same kind as the metal substance, processed and particles of the metal are deposited on an inner wall of said processing chamber.
摘要翻译：等离子体处理装置包括布置在真空容器中的处理室。使用在处理室中形成的等离子体来处理放置在处理室中的样品台上的晶片。在蚀刻设置在由金属物质和下面的氧化物膜或具有高介电常数的材料构成的晶片上的膜层之前，在其表面上设置由与金属物质相同种类的金属构成的膜的另一晶片，处理的金属颗粒沉积在所述处理室的内壁上。

3. 发明申请

US20070232067A1 Semiconductor Fabrication Method and Etching System 审中-公开
标题翻译：半导体制造方法和蚀刻系统
公开(公告)号：US20070232067A1
公开(公告)日：2007-10-04
申请号：US11692241
申请日：2007-03-28
申请人： Kousa Hirota , Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi , Toshio Masuda
发明人： Kousa Hirota , Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi , Toshio Masuda
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/28123
摘要： The invention provides a semiconductor fabrication method comprising a deposition step for depositing a laminated film on a semiconductor substrate having a region in which a mask pattern is formed sparsely and a region in which the mask pattern is formed densely, a lithography step s1 for forming a mask pattern, a cleaning step S11C for removing deposits in the apparatus, a trimming step S3 for trimming the mask pattern, and dry etching steps S4 and S5 for transferring the mask pattern on the laminated film, wherein a seasoning step S11S followed by a deposition step S2 is introduced either before or after the trimming step S3.
摘要翻译：本发明提供了一种半导体制造方法，包括：沉积步骤，用于在具有稀疏形成掩模图案的区域的半导体衬底上沉积层压膜，以及密集形成掩模图案的区域;用于形成的光刻步骤s1 掩模图案，用于去除设备中的沉积物的清洁步骤S111，用于修整掩模图案的修整步骤S3以及用于将掩模图案转印到层压膜上的干蚀刻步骤S 4和S 5，其中调味在修整步骤S 3之前或之后引入步骤S11A，然后进行沉积步骤S2。

4. 发明申请

US20100197137A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100197137A1
公开(公告)日：2010-08-05
申请号：US12393254
申请日：2009-02-26
申请人： Masahiro SUMIYA , Motohiro TANAKA , Kousa HIROTA
发明人： Masahiro SUMIYA , Motohiro TANAKA , Kousa HIROTA
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01L21/32136 , H01J37/32935 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on a surface thereof a film composed of a metal of the same kind as the metal substance, is processed and particles of the metal are deposited on an inner wall of said processing chamber.
摘要翻译：等离子体处理装置包括布置在真空容器中的处理室。使用在处理室中形成的等离子体来处理放置在处理室中的样品台上的晶片。在蚀刻由金属物质和下面的氧化物膜或具有高介电常数的材料构成的晶片上设置的膜层之前，在其表面上设置由与金属物质相同种类的金属构成的膜的另一晶片，并且金属的颗粒沉积在所述处理室的内壁上。

5. 发明授权

US08114244B2 Method for etching a sample 有权
标题翻译：蚀刻样品的方法
公开(公告)号：US08114244B2
公开(公告)日：2012-02-14
申请号：US12396673
申请日：2009-03-03
申请人： Kousa Hirota , Yasuhiro Nishimori , Hiroshige Uchida
发明人： Kousa Hirota , Yasuhiro Nishimori , Hiroshige Uchida
IPC分类号： G06F19/00
CPC分类号： H01J37/32972 , H01J37/32862 , H01J37/32935
摘要： The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps S2 and S2′ before and after idling SS, emission intensities SiF(1) and SiF(2) in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database S4 is referred to based on these emission spectrums, so that the time of the plasma heating step S3 after the idling SS is controlled to heat the reactor, and after performing plasma heating S3, the next sample is subjected to etching S2.
摘要翻译：本发明提供一种用于进行能够保持稳定的处理轮廓的样品的蚀刻的批量生产处理的方法。用于对承载在真空处理反应器中的晶片进行等离子体处理的蚀刻的批量生产处理的方法使用包括真空处理室，气体供给装置，用于产生等离子体的等离子体产生装置的装置，用于监测等离子体发射和用于存储发射光谱的装置，其中发生装置（空载SS）的非操作时间，其中晶片的批量生产处理暂时停止，其中在清洁步骤S2和S2'之前和之后包括关于反应产物的沉积状态和反应器最上表面的温度的信息的等离子体中的怠速SS，发射强度SiF（1）和SiF（2），并且参考数据库S4 这些发射光谱，使得在空载SS之后的等离子体加热步骤S3的时间被控制以加热反应器，并且在执行等离子体加热S3，对下一个样品进行蚀刻S2。

6. 发明申请

US20100159704A1 METHOD FOR ETCHING A SAMPLE 有权
标题翻译：蚀刻样品的方法
公开(公告)号：US20100159704A1
公开(公告)日：2010-06-24
申请号：US12396673
申请日：2009-03-03
申请人： Kousa HIROTA , Yasuhiro NISHIMORI , Hiroshige UCHIDA
发明人： Kousa HIROTA , Yasuhiro NISHIMORI , Hiroshige UCHIDA
IPC分类号： H01L21/3065
CPC分类号： H01J37/32972 , H01J37/32862 , H01J37/32935
摘要： The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps S2 and S2′ before and after idling SS, emission intensities SiF(1) and SiF(2) in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database S4 is referred to based on these emission spectrums, so that the time of the plasma heating step S3 after the idling SS is controlled to heat the reactor, and after performing plasma heating S3, the next sample is subjected to etching S2.
摘要翻译：本发明提供一种用于进行能够保持稳定的处理轮廓的样品的蚀刻的批量生产处理的方法。用于对承载在真空处理反应器中的晶片进行等离子体处理的蚀刻的批量生产处理的方法使用包括真空处理室，气体供给装置，用于产生等离子体的等离子体产生装置的装置，用于监测等离子体发射和用于存储发射光谱的装置，其中发生装置（空载SS）的非操作时间，其中晶片的批量生产处理暂时停止，其中在清洁步骤S2和S2'之前和之后包括关于反应产物的沉积状态和反应器最上表面的温度的信息的等离子体中的怠速SS，发射强度SiF（1）和SiF（2），并且参考数据库S4 这些发射光谱，使得在空载SS之后的等离子体加热步骤S3的时间被控制以加热反应器，并且在执行等离子体加热S3，对下一个样品进行蚀刻S2。

7. 发明授权

US08500912B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US08500912B2
公开(公告)日：2013-08-06
申请号：US13008993
申请日：2011-01-19
申请人： Kousa Hirota
发明人： Kousa Hirota
IPC分类号： B08B7/00
CPC分类号： H01J37/32192
摘要： Provided is a plasma processing method capable of removing a Ti-series deposit from the surface of a processing chamber of a plasma processing apparatus without production of a foreign matter such as a boron oxide. The plasma processing method includes carbon-series deposition discharge which succeeds product etching during which a sample containing a Ti material is processed, and during which a carbon-series film is deposited on a Ti reaction by-product deposited on the surface of the processing chamber, and chlorine-series discharge which succeeds the carbon-series deposition discharge and during which the carbon-series film and Ti that are deposited on the surface of the processing chamber are removed.
摘要翻译：提供了能够从等离子体处理装置的处理室的表面去除Ti系列沉积物而不产生诸如氧化硼等异物的等离子体处理方法。等离子体处理方法包括成功进行产品蚀刻的碳系淀积放电，在此期间，处理包含Ti材料的样品，并且在该反应过程中，在沉积在处理室的表面上的Ti反应副产物上沉积碳系膜以及成为碳系沉积放电的氯系放电，在该处理室中除去沉积在处理室的表面上的碳系膜和Ti。

8. 发明申请

US20120085366A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20120085366A1
公开(公告)日：2012-04-12
申请号：US13008993
申请日：2011-01-19
申请人： Kousa HIROTA
发明人： Kousa HIROTA
IPC分类号： B08B7/00 , H05H1/24 , B08B13/00
CPC分类号： H01J37/32192
摘要： Provided is a plasma processing method capable of removing a Ti-series deposit from the surface of a processing chamber of a plasma processing apparatus without production of a foreign matter such as a boron oxide. The plasma processing method includes carbon-series deposition discharge which succeeds product etching during which a sample containing a Ti material is processed, and during which a carbon-series film is deposited on a Ti reaction by-product deposited on the surface of the processing chamber, and chlorine-series discharge which succeeds the carbon-series deposition discharge and during which the carbon-series film and Ti that are deposited on the surface of the processing chamber are removed.
摘要翻译：提供了能够从等离子体处理装置的处理室的表面去除Ti系列沉积物而不产生诸如氧化硼等异物的等离子体处理方法。等离子体处理方法包括成功进行产品蚀刻的碳系淀积放电，在此期间，处理包含Ti材料的样品，并且在该反应过程中，在沉积在处理室的表面上的Ti反应副产物上沉积碳系膜以及成为碳系沉积放电的氯系放电，在该处理室中除去沉积在处理室的表面上的碳系膜和Ti。

9. 发明申请

US20100178415A1 METHOD FOR SEASONING PLASMA PROCESSING APPARATUS, AND METHOD FOR DETERMINING END POINT OF SEASONING 审中-公开
标题翻译：等离子体处理装置的方法和确定末端点的方法
公开(公告)号：US20100178415A1
公开(公告)日：2010-07-15
申请号：US12396699
申请日：2009-03-03
申请人： Yasuhiro NISHIMORI , Hiroshige UCHIDA , Masamichi SAKAGUCHI , Kousa HIROTA
发明人： Yasuhiro NISHIMORI , Hiroshige UCHIDA , Masamichi SAKAGUCHI , Kousa HIROTA
IPC分类号： B05D1/00
CPC分类号： H01J37/32963 , B08B7/00 , H01J37/32192 , H01J37/32862
摘要： The invention provides a method for determining an end point of seasoning of a plasma processing apparatus capable of reducing the time required for seasoning after performing wet cleaning and determining the optimum end point of seasoning with superior repeatability. The present method comprises, after performing wet cleaning (S501) of the plasma processing apparatus, using a processing gas containing SF6 as processing gas and applying an RF bias double that of mass production conditions to perform seasoning (S502), acquiring emission data of SiF and Ar during plasma processing using test conditions using SiF and Ar gases (S503), determining whether the computed value of emission intensities during seasoning is equal to or smaller than the computed value of emission intensities during stable mass production (S504), and determining the endpoint of the seasoning process when the value is determined to be equal or smaller.
摘要翻译：本发明提供了一种用于确定等离子体处理装置的调味终点的方法，其能够在进行湿清洗之后减少调味所需的时间，并以优异的重复性确定调味料的最佳终点。本方法包括在进行等离子体处理装置的湿式清洗（S501）后，使用含有SF6的处理气体作为处理气体，并施加大量生产条件的RF偏置倍以进行调味（S502），获取SiF的发射数据和Ar，使用SiF和Ar气体的测试条件（S503）进行等离子体处理（S503），确定在稳定批量生产期间计算出的发光强度值是否等于或小于计算出的发光强度值（S504），并确定确定该值被确定为等于或小于调味过程的终点。

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