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1. 发明申请

US20140347927A1 NONVOLATILE MEMORY DEVICE HAVING SPLIT GROUND SELECTION LINE STRUCTURES 有权
标题翻译：具有分离地线选择线结构的非易失性存储器件
公开(公告)号：US20140347927A1
公开(公告)日：2014-11-27
申请号：US14244930
申请日：2014-04-04
申请人： MINSU KIM , YANG-LO AHN , DAE HAN KIM , KITAE PARK
发明人： MINSU KIM , YANG-LO AHN , DAE HAN KIM , KITAE PARK
IPC分类号： G11C16/08
CPC分类号： G11C16/08 , G11C16/0483 , G11C16/3427
摘要： A nonvolatile memory device comprises a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.
摘要翻译：非易失性存储器件包括以三维（3D）结构排列的多个垂直NAND闪存单元，设置在3D结构中的第一存储器块，并具有由第一接地选择线和第二接地选择线选择的存储单元，其中所述第一和第二接地选择线彼此电分离，设置在所述3D结构中并具有由第三选择线和第四选择线选择的存储单元的第二存储器块，其中所述第三和第四接地选择线被电分离以及传递驱动信号以通过响应于块选择信号接通分别连接到第一和第三接地选择线的接地选择晶体管的传输晶体管。

2. 发明申请

US20160055919A1 NONVOLATILE MEMORY DEVICES AND PROGRAM VERIFICATION METHODS 有权
标题翻译：非易失性存储器件和程序验证方法
公开(公告)号：US20160055919A1
公开(公告)日：2016-02-25
申请号：US14668043
申请日：2015-03-25
申请人： ILHAN PARK , JI-SUK KIM , JUNG-HO SONG , YANG-LO AHN
发明人： ILHAN PARK , JI-SUK KIM , JUNG-HO SONG , YANG-LO AHN
IPC分类号： G11C16/34 , G11C16/08 , G11C16/10
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C2211/5621
摘要： A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.
摘要翻译：程序验证方法是用于对多个存储器单元进行编程的非易失性存储器件。程序验证方法包括应用多个验证电压，并且基于多个验证电压中的一个来确定具有不同目标阈值电压分布的存储单元的编程是否从多个存储单元中的一个完成。

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