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    • 1. 发明申请
    • NONVOLATILE MEMORY DEVICE HAVING SPLIT GROUND SELECTION LINE STRUCTURES
    • 具有分离地线选择线结构的非易失性存储器件
    • US20140347927A1
    • 2014-11-27
    • US14244930
    • 2014-04-04
    • MINSU KIMYANG-LO AHNDAE HAN KIMKITAE PARK
    • MINSU KIMYANG-LO AHNDAE HAN KIMKITAE PARK
    • G11C16/08
    • G11C16/08G11C16/0483G11C16/3427
    • A nonvolatile memory device comprises a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.
    • 非易失性存储器件包括以三维(3D)结构排列的多个垂直NAND闪存单元,设置在3D结构中的第一存储器块,并具有由第一接地选择线和第二接地选择线选择的存储单元, 其中所述第一和第二接地选择线彼此电分离,设置在所述3D结构中并具有由第三选择线和第四选择线选择的存储单元的第二存储器块,其中所述第三和第四接地选择线被电分离 以及传递驱动信号以通过响应于块选择信号接通分别连接到第一和第三接地选择线的接地选择晶体管的传输晶体管。