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1. 发明申请

US20170300252A1 STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND CONTROLLER AND OPERATING METHOD OF THE STORAGE DEVICE 审中-公开
公开(公告)号：US20170300252A1
公开(公告)日：2017-10-19
申请号：US15438644
申请日：2017-02-21
申请人： HYEJIN YIM , JINYUB LEE , KYUNG-HWA KANG , MINSEOK KIM , MINSU KIM , SUNG-WON YUN
发明人： HYEJIN YIM , JINYUB LEE , KYUNG-HWA KANG , MINSEOK KIM , MINSU KIM , SUNG-WON YUN
IPC分类号： G06F3/06 , G06F11/10 , G11C29/52
CPC分类号： G06F3/0619 , G06F3/0653 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/1048 , G06F11/1068 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C29/52
摘要： A storage device includes a nonvolatile memory device and a controller configured to generate a read command according to a request of an external host device and transmit the read command to the nonvolatile memory device. The nonvolatile memory device is configured to perform a read operation in response to the read command, to output read data to the controller, and to store information of the read operation in an internal register.

2. 发明申请

US20140226403A1 MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES 有权
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US20140226403A1
公开(公告)日：2014-08-14
申请号：US14056268
申请日：2013-10-17
申请人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
发明人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
IPC分类号： G11C16/08
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

3. 发明申请

US20160179074A1 SYSTEM-ON-CHIP INCLUDING ON-CHIP CLOCK CONTROLLER AND MOBILE DEVICE HAVING THE SAME 有权
标题翻译：片上系统芯片，包括片上时钟控制器和具有相同功能的移动设备
公开(公告)号：US20160179074A1
公开(公告)日：2016-06-23
申请号：US14968894
申请日：2015-12-15
申请人： MINSU KIM
发明人： MINSU KIM
IPC分类号： G05B19/045 , G01R31/3185 , H03K3/356
CPC分类号： G05B19/045 , G01R31/318541 , G01R31/318552 , H03K3/012 , H03K3/356 , H03K3/356008 , H03K3/356104
摘要： A system-on-chip (SoC) includes a logic circuit having a scan flip-flop and a an on-chip clock controller. The scan flip-flop is configured to store data using a passive keeper. The on-chip clock controller is configured to receive a reference clock for driving the logic circuit, to generate an internal clock based on a high-state interval of the reference clock, and to provide the internal clock to the scan flip-flop.
摘要翻译：片上系统（SoC）包括具有扫描触发器和片上时钟控制器的逻辑电路。扫描触发器被配置为使用被动保持器来存储数据。片上时钟控制器被配置为接收用于驱动逻辑电路的参考时钟，以基于参考时钟的高状态间隔产生内部时钟，并向扫描触发器提供内部时钟。

4. 发明申请

US20140347927A1 NONVOLATILE MEMORY DEVICE HAVING SPLIT GROUND SELECTION LINE STRUCTURES 有权
标题翻译：具有分离地线选择线结构的非易失性存储器件
公开(公告)号：US20140347927A1
公开(公告)日：2014-11-27
申请号：US14244930
申请日：2014-04-04
申请人： MINSU KIM , YANG-LO AHN , DAE HAN KIM , KITAE PARK
发明人： MINSU KIM , YANG-LO AHN , DAE HAN KIM , KITAE PARK
IPC分类号： G11C16/08
CPC分类号： G11C16/08 , G11C16/0483 , G11C16/3427
摘要： A nonvolatile memory device comprises a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.
摘要翻译：非易失性存储器件包括以三维（3D）结构排列的多个垂直NAND闪存单元，设置在3D结构中的第一存储器块，并具有由第一接地选择线和第二接地选择线选择的存储单元，其中所述第一和第二接地选择线彼此电分离，设置在所述3D结构中并具有由第三选择线和第四选择线选择的存储单元的第二存储器块，其中所述第三和第四接地选择线被电分离以及传递驱动信号以通过响应于块选择信号接通分别连接到第一和第三接地选择线的接地选择晶体管的传输晶体管。

5. 发明申请

US20160005478A1 MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES 审中-公开
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US20160005478A1
公开(公告)日：2016-01-07
申请号：US14855433
申请日：2015-09-16
申请人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
发明人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
IPC分类号： G11C16/24 , G11C16/04 , G11C16/26 , G11C16/08 , G11C16/14
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

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