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1. 发明授权

US5679983A Highly purified metal material and sputtering target using the same 失效
标题翻译：高纯金属材料和使用其的溅射靶
公开(公告)号：US5679983A
公开(公告)日：1997-10-21
申请号：US454583
申请日：1995-05-31
申请人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
发明人： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC分类号： C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

2. 发明授权

US4931443A Piperazine compound and pharmaceutical use thereof 失效
标题翻译：哌嗪化合物及其药物用途
公开(公告)号：US4931443A
公开(公告)日：1990-06-05
申请号：US219543
申请日：1988-06-24
申请人： Toru Nakao , Kenji Morita , Minoru Obata , Yasuto Morimoto
发明人： Toru Nakao , Kenji Morita , Minoru Obata , Yasuto Morimoto
IPC分类号： A61K31/40 , A61K31/4015 , A61K31/495 , A61K31/535 , A61P25/18 , A61P43/00 , C07D207/26 , C07D207/27 , C07D295/112 , C07D307/33 , C07D401/12 , C07D403/12 , C07D405/12
CPC分类号： C07D207/26 , C07D295/112 , C07D307/33 , C07D401/12 , C07D403/12 , C07D405/12
摘要： A piperazine compound represented by the general formula: ##STR1## (wherein each of the symbols is as defined above) or a pharmaceutically acceptable acid addition salt thereof, and pharmaceutical uses thereof as well as intermediates thereof are disclosed. The above piperazine compounds possess antipsychotic activities with less adverse reaction on the extrapyramidal system and are useful as drugs.

3. 发明授权

US4678785A Thiadiazine compounds 失效
标题翻译：噻二嗪化合物
公开(公告)号：US4678785A
公开(公告)日：1987-07-07
申请号：US792402
申请日：1985-10-29
申请人： Hideki Ao , Minoru Obata , Jun Inui
发明人： Hideki Ao , Minoru Obata , Jun Inui
IPC分类号： C07D413/04 , A61K31/535 , A61K31/54 , A61P9/04 , A61P9/08 , A61P9/10 , C07D417/04
CPC分类号： C07D417/04
摘要： A thiadiazine compound of the formula: ##STR1## a method for preparing said compound and a pharmaceutical composition containing said compound, wherein X is methylene which may be optionally substituted by an alkyl of up to 3 carbon atoms; R is hydrogen atom or methyl group; and n is an integer of 1 or 2.Since the compounds exhibit potent cardiotonic and coronary vasodilator activities and further inhibitory activity on platelet aggregation, they are useful as cardiotonic and antithrombotic drugs.
摘要翻译：下式的噻二嗪化合物：＆lt; IMAGE＆gt;用于制备所述化合物的方法和含有所述化合物的药物组合物，其中X为任选被至多3个碳原子的烷基取代的亚甲基; R为氢原子或甲基; 并且n为1或2的整数。由于该化合物显示出有力的强心剂和冠状血管扩张剂活性和对血小板聚集的进一步抑制活性，因此它们可用作强心剂和抗血栓形成药物。

4. 发明申请

US20120169505A1 LIFE ESTIMATING METHOD FOR HEATER WIRE, HEATING APPARATUS, STORAGE MEDIUM, AND LIFE ESTIMATING SYSTEM FOR HEATER WIRE 审中-公开
标题翻译：用于加热线，加热装置，储存介质和加热器寿命估算系统的生命估计方法
公开(公告)号：US20120169505A1
公开(公告)日：2012-07-05
申请号：US13350625
申请日：2012-01-13
申请人： Nobutoshi TERASAWA , Minoru Obata , Noriaki Koyama
发明人： Nobutoshi TERASAWA , Minoru Obata , Noriaki Koyama
IPC分类号： G08B21/00
CPC分类号： F27B17/0025
摘要： A life estimating method for a heater wire utilizes data obtained during a period (e.g., a temperature rising period), in which a sign of disconnection of the heater wire is likely to be seen. This method includes detecting a maximum magnitude value of electric power supplied to the heater wire during the temperature rising period for elevating the temperature to a heating temperature prior to providing a heating process to a wafer or wafers. The method further includes obtaining an index indicative of a magnitude of the amplitude of the electric power, and giving notice that the heater wire is approaching the end of its life when the indexes respectively indicate that the electric power magnitude and the amplitude magnitude exceed threshold values respectively.
摘要翻译：加热丝的寿命估计方法利用在可能看到加热丝线的断开符号的期间（例如升温期间）中获得的数据。该方法包括检测在升温期间提供给加热丝的电力的最大幅度值，以在将加热过程提供给晶片或晶片之前将温度升高至加热温度。该方法还包括获得指示电力振幅大小的指标，并且当指标分别指示电力幅度和振幅幅度超过阈值时，注意到加热器线接近其寿命结束分别。

5. 发明申请

US20090110824A1 Substrate processing apparatus and method of controlling substrate processing apparatus 审中-公开
标题翻译：基板处理装置及其控制方法
公开(公告)号：US20090110824A1
公开(公告)日：2009-04-30
申请号：US12289463
申请日：2008-10-28
申请人： Yuichi Takenaga , Takahito Kasai , Minoru Obata , Yoshihiro Takezawa , Kazuo Yabe
发明人： Yuichi Takenaga , Takahito Kasai , Minoru Obata , Yoshihiro Takezawa , Kazuo Yabe
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/481 , C23C16/52
摘要： In accordance with a set temperature profile including: a first step in which a temperature is varied from a first temperature to a second temperature during a first time period; a second step in which the temperature is maintained at the second temperature during a second time period; and a third step in which the temperature is varied from the second temperature to a third temperature; a substrate is subjected to a film deposition process. The first temperature, the second temperature, and the third temperature are determined based on the first relationship between temperature and film thickness, the measured film thicknesses at the plurality of positions, and a predetermined target film thickness. There are calculated expected film thicknesses at a plurality of positions on a substrate to be actually processed in accordance with the set temperature profile corresponding to the determined first temperature, the determined second temperature, and the determined third temperature. When the expected film thicknesses at the plurality of positions are not within a predetermined allowable range with respect to the predetermined target film thickness, at least one of the first time period, the second time period, and the third time period is varied.
摘要翻译：根据设定温度曲线图，包括：第一步骤，其中温度在第一时间段内从第一温度变化到第二温度; 在第二时间段内将温度保持在第二温度的第二步骤; 以及第三步骤，其中温度从第二温度变化到第三温度; 对基板进行成膜处理。基于温度和膜厚度之间的第一关系，多个位置处测量的膜厚度和预定的目标膜厚度来确定第一温度，第二温度和第三温度。根据对应于所确定的第一温度，确定的第二温度和确定的第三温度的设定温度曲线，计算待实际处理的基板上的多个位置处的预期膜厚度。当多个位置处的预期膜厚度相对于预定目标膜厚度不在预定的允许范围内时，第一时间段，第二时间段和第三时间段中的至少一个是变化的。

6. 发明授权

US5470527A Ti-W sputtering target and method for manufacturing same 失效
标题翻译： Ti-W溅射靶及其制造方法
公开(公告)号：US5470527A
公开(公告)日：1995-11-28
申请号：US302996
申请日：1994-09-12
申请人： Takashi Yamanobe , Michio Satou , Takashi Ishigami , Minoru Obata , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Shigeru Ando
发明人： Takashi Yamanobe , Michio Satou , Takashi Ishigami , Minoru Obata , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Shigeru Ando
IPC分类号： C23C14/14 , C23C14/34 , B22F3/10
CPC分类号： C23C14/3414
摘要： A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.
摘要翻译：基本上由Ti-W相的连续基体，分散在基体中的粒径为50μm以下的Ti相和粒径为20μm以下的W相组成的溅射靶也分布在矩阵。优选地，靶含有1ppm以下的铝。目标具有高密度和低杂质含量，当用于溅射时，该靶减少了靶中的粒子的产生。还公开了溅射靶的制造方法。

7. 发明授权

US4849421A Anti-anxiety benzothiepino(5,4-c]pyridazines 失效
标题翻译：抗焦虑苯并噻皮喹（5,4-c）哒嗪
公开(公告)号：US4849421A
公开(公告)日：1989-07-18
申请号：US162935
申请日：1988-03-02
申请人： Toru Nakao , Minoru Kawakami , Minoru Obata , Kenji Morita
发明人： Toru Nakao , Minoru Kawakami , Minoru Obata , Kenji Morita
IPC分类号： C07D495/04
CPC分类号： C07D495/04
摘要： A benzothiepino 5,4-c]pyridazine compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are the same or different and each is hydrogen, halogen, trifluoromethyl, hydroxy, amino, nitro, cyano, C.sub.1-4 alkyl, C.sub.1-4 alkoxy, or C.sub.2-5 alkanoylamino, R.sup.3 is hydrogen, C.sub.1-8 alkyl, hydroxy-C.sub.1-4 alkyl, C.sub.2-5 alkanoyloxy-C.sub.1-4 alkyl, aryl, aryl-C.sub.1-4 alkyl, heteroaryl, or substituted aryl, aryl-C.sub.1-4 alkyl or heteroaryl by 1 to 3 substituents selected from the group consisting of halogen, trifluoromethyl, hydroxy, amino, nitro, cyano, C.sub.1-4 alkyl, C.sub.1-4 alkoxy and C.sub.2-5 alkanoylamino on the armoatic ring, n is 0, 1 or 2, and the bond between the 4-position and the 4a-position is single bond or double bond.Said compounds exhibit anti-anxietic activity and are useful as anti-anxiety agent.

8. 发明授权

US08121799B2 Life estimating method for heater wire, heating apparatus, storage medium, and life estimating system for heater wire 有权
标题翻译：加热丝丝，加热装置，储存介质和加热丝寿命估算系统的寿命估算方法
公开(公告)号：US08121799B2
公开(公告)日：2012-02-21
申请号：US12081404
申请日：2008-04-15
申请人： Nobutoshi Terasawa , Minoru Obata , Noriaki Koyama
发明人： Nobutoshi Terasawa , Minoru Obata , Noriaki Koyama
IPC分类号： G01B3/44 , G01B3/52 , G01N37/00
CPC分类号： F27B17/0025
摘要： A method of estimating the life of a heater wire, including the steps of: detecting a maximum value of electric power supplied to the heater wire during a temperature rising period during which a temperature is elevated to a preset heating temperature, obtaining an index indicative of the amplitude of the electric power, and giving a notice that the heater wire is approaching the end of its life when the electric power and the index indicative of the of amplitude of the electric power exceed threshold values respectively provided thereto.
摘要翻译：一种估计加热线寿命的方法，包括以下步骤：在温度升高到预设加热温度的升温期间，检测供应给加热丝的电力的最大值，得到指示电功率的振幅，并且当电功率和表示电功率的幅度的指标分别提供给它们时，发出加热线接近寿命结束的通知。

9. 发明授权

US07869888B2 Information processing apparatus, semiconductor manufacturing system, information processing method, and storage medium 有权
标题翻译：信息处理装置，半导体制造系统，信息处理方法和存储介质
公开(公告)号：US07869888B2
公开(公告)日：2011-01-11
申请号：US11754643
申请日：2007-05-29
申请人： Noriaki Koyama , Minoru Obata , Wenling Wang
发明人： Noriaki Koyama , Minoru Obata , Wenling Wang
IPC分类号： G05B13/02 , G06F19/00
CPC分类号： G05B23/0221 , G05B2219/32184 , G05B2219/32192 , G05B2219/45031 , Y02P90/22
摘要： A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.
摘要翻译：一种信息处理设备100，用于处理获取值，该获取值是由处理期间的状态获取的值，由半导体制造设备200执行，用于根据设定值对包含半导体的处理对象进行处理，是用于设定治疗条件的值，包括：用于接收设定值的设定值接收部101; 用于接收所获取的值的状态值接收部分102; 校正量计算部分103，用于使用指示设定值和获取值之间的关系的校正函数来计算获取值的校正量; 校正部分104，用于使用由校正量计算部分103计算的校正量来校正由状态值接收部分102接收到的获取值; 以及输出部分105，用于输出校正部分104执行的校正结果。

10. 发明申请

US20090276076A1 SERVER DEVICE AND PROGRAM 有权
标题翻译：服务器设备和程序
公开(公告)号：US20090276076A1
公开(公告)日：2009-11-05
申请号：US12375590
申请日：2007-07-09
申请人： Masashi Takahashi , Minoru Obata , Noriaki Koyama
发明人： Masashi Takahashi , Minoru Obata , Noriaki Koyama
IPC分类号： G06F17/00
CPC分类号： G05B23/0213 , H01L21/67276
摘要： A server device is provided with a measurement information storage unit 1201 which can store plural measurement information, i.e., information having a measurement value and time information indicating time; an instruction receiving unit for receiving an output instruction of the measurement information; a measurement information acquisition unit for acquiring, from the measurement information storage unit, the measurement information designated by the output instruction; an output information composing unit for composing output information by using the acquired measurement information; and an output unit for outputting the output information composed by the output information composing unit. The output instruction includes an instruction for designating one or more desired number of times of execution of a sub-recipe among plural number of times of execution of the sub-recipe in the recipe and the measurement information acquisition unit acquires measurement information corresponding to the sub-recipe designated by the output instruction.
摘要翻译：服务器装置设置有可以存储多个测量信息的测量信息存储单元1201，即具有测量值的信息和指示时间的时间信息; 指令接收单元，用于接收测量信息的输出指令; 测量信息获取单元，用于从测量信息存储单元获取由输出指令指定的测量信息; 输出信息组合单元，用于通过使用获取的测量信息来组合输出信息; 以及输出单元，用于输出由输出信息组合单元组成的输出信息。输出指令包括用于在食谱中指定子数据的多次执行中的一个或多个期望次数的执行次数的指令，并且测量信息获取单元获取与子配方相对应的测量信息由输出指令指定的-recipe。

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