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1. 发明申请

US20090110824A1 Substrate processing apparatus and method of controlling substrate processing apparatus 审中-公开
标题翻译：基板处理装置及其控制方法
公开(公告)号：US20090110824A1
公开(公告)日：2009-04-30
申请号：US12289463
申请日：2008-10-28
申请人： Yuichi Takenaga , Takahito Kasai , Minoru Obata , Yoshihiro Takezawa , Kazuo Yabe
发明人： Yuichi Takenaga , Takahito Kasai , Minoru Obata , Yoshihiro Takezawa , Kazuo Yabe
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/481 , C23C16/52
摘要： In accordance with a set temperature profile including: a first step in which a temperature is varied from a first temperature to a second temperature during a first time period; a second step in which the temperature is maintained at the second temperature during a second time period; and a third step in which the temperature is varied from the second temperature to a third temperature; a substrate is subjected to a film deposition process. The first temperature, the second temperature, and the third temperature are determined based on the first relationship between temperature and film thickness, the measured film thicknesses at the plurality of positions, and a predetermined target film thickness. There are calculated expected film thicknesses at a plurality of positions on a substrate to be actually processed in accordance with the set temperature profile corresponding to the determined first temperature, the determined second temperature, and the determined third temperature. When the expected film thicknesses at the plurality of positions are not within a predetermined allowable range with respect to the predetermined target film thickness, at least one of the first time period, the second time period, and the third time period is varied.
摘要翻译：根据设定温度曲线图，包括：第一步骤，其中温度在第一时间段内从第一温度变化到第二温度; 在第二时间段内将温度保持在第二温度的第二步骤; 以及第三步骤，其中温度从第二温度变化到第三温度; 对基板进行成膜处理。基于温度和膜厚度之间的第一关系，多个位置处测量的膜厚度和预定的目标膜厚度来确定第一温度，第二温度和第三温度。根据对应于所确定的第一温度，确定的第二温度和确定的第三温度的设定温度曲线，计算待实际处理的基板上的多个位置处的预期膜厚度。当多个位置处的预期膜厚度相对于预定目标膜厚度不在预定的允许范围内时，第一时间段，第二时间段和第三时间段中的至少一个是变化的。

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