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1. 发明申请

US20080224236A1 METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于半导体器件的金属栅极电极
公开(公告)号：US20080224236A1
公开(公告)日：2008-09-18
申请号：US12020815
申请日：2008-01-28
申请人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
发明人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842
摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.
摘要翻译：一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

2. 发明授权

US07389664B1 Electromagnetic forming device for sheet of material 有权
标题翻译：材料用电磁成形装置
公开(公告)号：US07389664B1
公开(公告)日：2008-06-24
申请号：US11939737
申请日：2007-11-14
申请人： Tung-Chen Cheng , Tzyy-Ker Sue , Chi-Keung Chung , Chun-Chieh Wang , Hsing-Ta Hsieh , Ming-Fu Li
发明人： Tung-Chen Cheng , Tzyy-Ker Sue , Chi-Keung Chung , Chun-Chieh Wang , Hsing-Ta Hsieh , Ming-Fu Li
IPC分类号： B21D26/02
CPC分类号： B21D26/14 , Y10S72/707
摘要： An electromagnetic forming device for a sheet of material is provided. The electromagnetic forming device includes a fixing base, a magnetic concentration block, an electromagnetic actuator, and a die. The fixing base has a groove. The magnetic concentration block is disposed in the groove of the fixing base, and has an accommodating space therein, which is in communication with a surface of the magnetic concentration block via a slit. The electromagnetic actuator, used to generate a magnetic field, is disposed in the accommodating space of the magnetic concentration block, but does not contact the magnetic concentration block. The die and the magnetic concentration block are separated by a gap, and a sheet of material can be disposed in the gap. As the magnetic concentration block is a block, eddy currents in the magnetic concentration block are distributed uniformly, so the generated magnetic field is also distributed uniformly, thus exerting a uniform forming force on the sheet of material.
摘要翻译：提供了一种用于材料片的电磁成形装置。电磁成形装置包括固定基座，磁性集中块，电磁致动器和模具。固定底座有凹槽。磁性浓度块设置在固定基座的槽中，并且其中具有容纳空间，其经由狭缝与磁性浓度块的表面连通。用于产生磁场的电磁致动器设置在磁性浓度块的容纳空间中，但不接触磁性浓度块。模具和磁性浓度块由间隙分开，并且一片材料可以设置在间隙中。由于磁性浓度块为块状，磁性浓度块中的涡流均匀分布，所以产生的磁场也均匀分布，从而在材料片上施加均匀的成形力。

3. 发明申请

US20050205947A1 Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof 有权
标题翻译：使用HfN作为金属栅电极的耐热半导体器件及其制造方法
公开(公告)号：US20050205947A1
公开(公告)日：2005-09-22
申请号：US10802563
申请日：2004-03-17
申请人： Hong Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Bera
发明人： Hong Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Bera
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.
摘要翻译：本发明涉及利用高度耐热的金属电极作为栅极材料的半导体器件。特别地，教导了作为金属栅极电极（或金属栅极叠层的一部分）的氮化铪的开发，并且示出了其具有不同实施例的制造的制造步骤。

4. 发明申请

US20090179281A1 Schottky barrier source/drain N-MOSFET using ytterbium silicide 审中-公开
标题翻译：肖特基势垒源/漏极使用镱硅化物N-MOSFET
公开(公告)号：US20090179281A1
公开(公告)日：2009-07-16
申请号：US12322604
申请日：2009-02-04
申请人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chungxiang Zhu , Dim-Lee Kwong
发明人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chungxiang Zhu , Dim-Lee Kwong
IPC分类号： H01L29/78
CPC分类号： H01L21/28518 , H01L21/28088 , H01L21/28185 , H01L29/47 , H01L29/4966 , H01L29/517 , H01L29/66643 , H01L29/7839
摘要： An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.
摘要翻译：描述了使用镱硅化物（YbSi2-x）作为源极和漏极的N型肖特基势垒源极/漏极晶体管（N-SSDT）。该结构包括合适的覆盖层堆叠。

5. 发明授权

US07514360B2 Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof 有权
标题翻译：使用HfN作为金属栅电极的耐热半导体器件及其制造方法
公开(公告)号：US07514360B2
公开(公告)日：2009-04-07
申请号：US10802563
申请日：2004-03-17
申请人： Hong Yu Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Kanta Bera
发明人： Hong Yu Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Kanta Bera
IPC分类号： H01L21/44
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.
摘要翻译：本发明涉及利用高度耐热的金属电极作为栅极材料的半导体器件。特别地，教导了作为金属栅极电极（或金属栅极叠层的一部分）的氮化铪的开发，并且示出了其具有不同实施例的制造的制造步骤。

6. 发明授权

US07504328B2 Schottky barrier source/drain n-mosfet using ytterbium silicide 失效
标题翻译：肖特基势垒源/漏极n-mosfet使用镱硅化物
公开(公告)号：US07504328B2
公开(公告)日：2009-03-17
申请号：US11126031
申请日：2005-05-10
申请人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
发明人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
IPC分类号： H01L21/441
CPC分类号： H01L21/28518 , H01L21/28088 , H01L21/28185 , H01L29/47 , H01L29/4966 , H01L29/517 , H01L29/66643 , H01L29/7839
摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
摘要翻译：提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适的覆盖层叠层。

7. 发明授权

US07002175B1 Method of making resonant tunneling diodes and CMOS backend-process-compatible three dimensional (3-D) integration 失效
标题翻译：制造谐振隧道二极管和CMOS后端工艺兼容三维（3-D）集成的方法
公开(公告)号：US07002175B1
公开(公告)日：2006-02-21
申请号：US10961355
申请日：2004-10-08
申请人： Jagar Singh , Yong Tian Hou , Ming Fu Li
发明人： Jagar Singh , Yong Tian Hou , Ming Fu Li
IPC分类号： H01L29/06
CPC分类号： H01L29/882 , B82Y10/00 , H01L29/66219
摘要： A double barrier resonant tunneling diode (RTD) is formed and integrated with a level of CMOS/BJT/SiGe devices and circuits through processes such as metal-to-metal thermocompressional bonding, anodic bonding, eutectic bonding, plasma bonding, silicon-to-silicon bonding, silicon dioxide bonding, silicon nitride bonding and polymer bonding or plasma bonding. The electrical connections are made using conducting interconnects aligned during the bonding process. The resulting circuitry has a three-dimensional architecture. The tunneling barrier layers of the RTD are formed of high-K dielectric materials such as SiO2, Si3N4, Al2O3, Y2O3, Ta2O5, TiO2, HfO2, Pr2O3, ZrO2, or their alloys and laminates, having higher band-gaps than the material forming the quantum well, which includes Si, Ge or SiGe. The inherently fast operational speed of the RTD, combined with the 3-D integrated architecture that reduces interconnect delays, will produce ultra-fast circuits with low noise characteristics.
摘要翻译：通过金属对金属热压接合，阳极接合，共晶接合，等离子体接合，硅 - 二极管等工艺，形成双层势垒共振隧道二极管（RTD）并与CMOS / BJT / SiGe器件和电路集成，硅键合，二氧化硅键合，氮化硅键合和聚合物键合或等离子体键合。电连接使用在接合过程中对准的导电互连来制成。所得到的电路具有三维结构。 RTD的隧道势垒层由高K电介质材料形成，例如SiO 2，Si 3 N 4 N 4，Al 2 O 3， 2个O 3，3个O 3，3个O 2，3个O 3， TiO 2，TiO 2，HfO 2，Pr 2 O 3，ZrO 2，N 2， >或其合金和层压体，具有比形成量子阱的材料（包括Si，Ge或SiGe）更高的带隙。 RTD的固有的快速操作速度与减少互连延迟的3-D集成架构相结合，将产生具有低噪声特性的超快速电路。

8. 发明申请

US20110155341A1 MOLD SET FOR MANUFACTURING CASE AND THE METHOD THEREOF 有权
标题翻译：用于制造壳体的模具及其方法
公开(公告)号：US20110155341A1
公开(公告)日：2011-06-30
申请号：US12911259
申请日：2010-10-25
申请人： Ming-Fu LI , Sheng-Chi TSAI , Ping-Kuo CHENG , Tai-Chang CHEN
发明人： Ming-Fu LI , Sheng-Chi TSAI , Ping-Kuo CHENG , Tai-Chang CHEN
IPC分类号： B22D17/22
CPC分类号： B22D17/22
摘要： A mold set for manufacturing a case is provided. The mold set comprises an upper mold having a fluid channel; a lower mold facing the upper mold; and a drawing mold disposed between the upper mold and the lower mold, wherein the mold set has a case forming space formed among the upper mold, the lower mold and the drawing mold, and the mold set has a sharp-edge forming space communicating with the case forming space, and formed between the drawing mold and the lower mold.
摘要翻译：提供了用于制造壳体的模具组。模具组包括具有流体通道的上模具; 面向上模的下模具; 以及设置在上模和下模之间的拉拔模具，其中模具组具有形成于上模具，下模具和拉拔模具之间的壳体形成空间，并且模具组具有与壳体形成空间，并且形成在拉拔模具和下模具之间。

9. 发明申请

US20090163005A1 Schottky barrier source/drain N-MOSFET using ytterbium silicide 审中-公开
标题翻译：肖特基势垒源/漏极使用镱硅化物N-MOSFET
公开(公告)号：US20090163005A1
公开(公告)日：2009-06-25
申请号：US12322932
申请日：2009-02-09
申请人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
发明人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
IPC分类号： H01L21/28
CPC分类号： H01L21/28518 , H01L21/28088 , H01L21/28185 , H01L29/47 , H01L29/4966 , H01L29/517 , H01L29/66643 , H01L29/7839
摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
摘要翻译：提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适的覆盖层叠层。

10. 发明申请

US20050285208A1 Metal gate electrode for semiconductor devices 审中-公开
标题翻译：用于半导体器件的金属栅电极
公开(公告)号：US20050285208A1
公开(公告)日：2005-12-29
申请号：US11149975
申请日：2005-06-10
申请人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
发明人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/76
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842
摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.
摘要翻译：一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

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