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1. 发明申请

US20050285208A1 Metal gate electrode for semiconductor devices 审中-公开
标题翻译：用于半导体器件的金属栅电极
公开(公告)号：US20050285208A1
公开(公告)日：2005-12-29
申请号：US11149975
申请日：2005-06-10
申请人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
发明人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/76
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842
摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.
摘要翻译：一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

2. 发明申请

US20080224236A1 METAL GATE ELECTRODE FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于半导体器件的金属栅极电极
公开(公告)号：US20080224236A1
公开(公告)日：2008-09-18
申请号：US12020815
申请日：2008-01-28
申请人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
发明人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842
摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.
摘要翻译：一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

3. 发明申请

US20090163005A1 Schottky barrier source/drain N-MOSFET using ytterbium silicide 审中-公开
标题翻译：肖特基势垒源/漏极使用镱硅化物N-MOSFET
公开(公告)号：US20090163005A1
公开(公告)日：2009-06-25
申请号：US12322932
申请日：2009-02-09
申请人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
发明人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
IPC分类号： H01L21/28
CPC分类号： H01L21/28518 , H01L21/28088 , H01L21/28185 , H01L29/47 , H01L29/4966 , H01L29/517 , H01L29/66643 , H01L29/7839
摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
摘要翻译：提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适的覆盖层叠层。

4. 发明申请

US20050205947A1 Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof 有权
标题翻译：使用HfN作为金属栅电极的耐热半导体器件及其制造方法
公开(公告)号：US20050205947A1
公开(公告)日：2005-09-22
申请号：US10802563
申请日：2004-03-17
申请人： Hong Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Bera
发明人： Hong Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Bera
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.
摘要翻译：本发明涉及利用高度耐热的金属电极作为栅极材料的半导体器件。特别地，教导了作为金属栅极电极（或金属栅极叠层的一部分）的氮化铪的开发，并且示出了其具有不同实施例的制造的制造步骤。

5. 发明申请

US20090179281A1 Schottky barrier source/drain N-MOSFET using ytterbium silicide 审中-公开
标题翻译：肖特基势垒源/漏极使用镱硅化物N-MOSFET
公开(公告)号：US20090179281A1
公开(公告)日：2009-07-16
申请号：US12322604
申请日：2009-02-04
申请人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chungxiang Zhu , Dim-Lee Kwong
发明人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chungxiang Zhu , Dim-Lee Kwong
IPC分类号： H01L29/78
CPC分类号： H01L21/28518 , H01L21/28088 , H01L21/28185 , H01L29/47 , H01L29/4966 , H01L29/517 , H01L29/66643 , H01L29/7839
摘要： An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.
摘要翻译：描述了使用镱硅化物（YbSi2-x）作为源极和漏极的N型肖特基势垒源极/漏极晶体管（N-SSDT）。该结构包括合适的覆盖层堆叠。

6. 发明授权

US07514360B2 Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof 有权
标题翻译：使用HfN作为金属栅电极的耐热半导体器件及其制造方法
公开(公告)号：US07514360B2
公开(公告)日：2009-04-07
申请号：US10802563
申请日：2004-03-17
申请人： Hong Yu Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Kanta Bera
发明人： Hong Yu Yu , Ming-Fu Li , Dim-Lee Kwong , Lakshmi Kanta Bera
IPC分类号： H01L21/44
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/51 , H01L29/7833
摘要： This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.
摘要翻译：本发明涉及利用高度耐热的金属电极作为栅极材料的半导体器件。特别地，教导了作为金属栅极电极（或金属栅极叠层的一部分）的氮化铪的开发，并且示出了其具有不同实施例的制造的制造步骤。

7. 发明授权

US07504328B2 Schottky barrier source/drain n-mosfet using ytterbium silicide 失效
标题翻译：肖特基势垒源/漏极n-mosfet使用镱硅化物
公开(公告)号：US07504328B2
公开(公告)日：2009-03-17
申请号：US11126031
申请日：2005-05-10
申请人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
发明人： Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
IPC分类号： H01L21/441
CPC分类号： H01L21/28518 , H01L21/28088 , H01L21/28185 , H01L29/47 , H01L29/4966 , H01L29/517 , H01L29/66643 , H01L29/7839
摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
摘要翻译：提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适的覆盖层叠层。

8. 发明申请

US20060286802A1 LOW WORK FUNCTION METAL ALLOY 失效
标题翻译：低功能金属合金
公开(公告)号：US20060286802A1
公开(公告)日：2006-12-21
申请号：US11382875
申请日：2006-05-11
申请人： HongYu Yu , Chen JingDe , Li Mingfu , Dim-Lee Kwong , Serge Biesemans , Jorge Kittl
发明人： HongYu Yu , Chen JingDe , Li Mingfu , Dim-Lee Kwong , Serge Biesemans , Jorge Kittl
IPC分类号： H01L21/44
CPC分类号： H01L21/28097 , H01L21/265 , H01L21/28088 , H01L21/28518 , H01L21/823842 , H01L21/823864 , H01L29/665 , H01L29/6659 , H01L29/785
摘要： Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
摘要翻译：提供了用作nMOS器件中的栅电极的低功函数金属。低功函数金属包括镧系元素，金属和半导体的合金。特别地，使用镍 - 镱（NiYb）的合金来完全硅化（FUSI）硅栅极。所得的镍镱硅栅电极具有约4.22eV的功函数。

9. 发明授权

US07504329B2 Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET 失效
标题翻译：形成用于n-MOSFET的Yb-DOPED Ni全硅化低功函数栅电极的方法
公开(公告)号：US07504329B2
公开(公告)日：2009-03-17
申请号：US11382875
申请日：2006-05-11
申请人： HongYu Yu , Chen JingDe , Li Mingfu , Dim-Lee Kwong , Serge Biesemans , Jorge Adrian Kittl
发明人： HongYu Yu , Chen JingDe , Li Mingfu , Dim-Lee Kwong , Serge Biesemans , Jorge Adrian Kittl
IPC分类号： H01L21/477
CPC分类号： H01L21/28097 , H01L21/265 , H01L21/28088 , H01L21/28518 , H01L21/823842 , H01L21/823864 , H01L29/665 , H01L29/6659 , H01L29/785
摘要： Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
摘要翻译：提供了用作nMOS器件中的栅电极的低功函数金属。低功函数金属包括镧系元素，金属和半导体的合金。特别地，使用镍 - 镱（NiYb）的合金来完全硅化（FUSI）硅栅极。所得的镍镱硅栅电极具有约4.22eV的功函数。

10. 发明授权

US06911707B2 Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance 有权
标题翻译：具有良好的界面性能的超薄高K栅极电介质，可提高半导体器件的性能
公开(公告)号：US06911707B2
公开(公告)日：2005-06-28
申请号：US09207972
申请日：1998-12-09
申请人： Mark I. Gardner , Dim-Lee Kwong , H. Jim Fulford, Jr.
发明人： Mark I. Gardner , Dim-Lee Kwong , H. Jim Fulford, Jr.
IPC分类号： H01L21/28 , H01L21/314 , H01L29/51 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3144 , H01L29/513 , H01L29/517 , H01L29/518
摘要： An ultrathin gate dielectric having a graded dielectric constant and a method for forming the same are provided. The gate dielectric is believed to allow enhanced performance of semiconductor devices including transistors and dual-gate memory cells. A thin nitrogen-containing oxide, preferably having a thickness of less than about 10 angstroms, is formed on a semiconductor substrate. A silicon nitride layer having a thickness of less than about 30 angstroms may be formed over the nitrogen-containing oxide. The oxide and nitride layers are annealed in ammonia and nitrous oxide ambients, and the nitride layer thickness is reduced using a flowing-gas etch process. The resulting two-layer gate dielectric is believed to provide increased capacitance as compared to a silicon dioxide dielectric while maintaining favorable interface properties with the underlying substrate. In an alternative embodiment, a different high dielectric constant material is substituted for the silicon nitride. Alternatively, both nitride and a different high dielectric constant material may be used so that a three-layer dielectric is formed.
摘要翻译：提供具有渐变介电常数的超薄栅极电介质及其形成方法。认为栅极电介质允许包括晶体管和双栅极存储器单元的半导体器件的增强的性能。在半导体衬底上形成薄的含氮氧化物，优选具有小于约10埃的厚度。可以在含氮氧化物上形成厚度小于约30埃的氮化硅层。氧化物和氮化物层在氨和一氧化二氮环境中退火，并且使用流动气体蚀刻工艺来减少氮化物层的厚度。与二氧化硅电介质相比，所得到的双层栅极电介质被认为提供增加的电容，同时保持与底层衬底的有利的界面性质。在替代实施例中，用不同的高介电常数材料代替氮化硅。或者，可以使用氮化物和不同的高介电常数材料，从而形成三层电介质。

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