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    • 3. 发明授权
    • Door for washing machine
    • 洗衣机门
    • US08151603B2
    • 2012-04-10
    • US12385556
    • 2009-04-10
    • Min-Gu KangKyu-Chul LeeChang-Woo Son
    • Min-Gu KangKyu-Chul LeeChang-Woo Son
    • D06F37/28
    • D06F39/14
    • A door for a washing machine is disclosed. A door for a washing machine includes an inner frame having an opening with a predetermined size, an outer frame provided at a front surface of the inner frame, having an opening in communication with the opening of the inner frame, a glass member fitted between the inner and outer frames, covering the openings of the inner and outer frames, a decorative member provided at a front surface of the outer frame, having an opening in communication with the openings, and a front cover fitted between the decorative member and the outer frame, covering the openings of the inner and outer frames and the decorative member, the front cover having a positioning portion determining a position of the front cover coupled to the outer frame.
    • 公开了一种用于洗衣机的门。 一种用于洗衣机的门包括具有预定尺寸的开口的内框架,设置在内框架的前表面处的外框架,具有与内框架的开口连通的开口;玻璃构件, 内框架和外框架,覆盖内框架和外框架的开口;设置在外框架的前表面处的装饰构件,具有与开口连通的开口,以及装配构件和外框架之间的前盖 覆盖内框架和外框架和装饰构件的开口,前盖具有确定联接到外框架的前盖的位置的定位部分。
    • 7. 发明申请
    • FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    • FIN场效应晶体管及其制造方法
    • US20080093674A1
    • 2008-04-24
    • US11952676
    • 2007-12-07
    • Deok-Hyung LeeYu-Gyun ShinJong-Wook LeeMin-Gu Kang
    • Deok-Hyung LeeYu-Gyun ShinJong-Wook LeeMin-Gu Kang
    • H01L29/78
    • H01L29/7851H01L29/66795H01L29/7854
    • In a fin field effect transistor (FET), an active pattern protrudes in a vertical direction from a substrate and extends across the substrate in a first horizontal direction. A first silicon nitride pattern is formed on the active pattern, and a first oxide pattern and a second silicon nitride pattern are sequentially formed on the substrate and on a sidewall of a lower portion of the active pattern. A device isolation layer is formed on the second silicon nitride pattern, and a top surface of the device isolation layer is coplanar with top surfaces of the oxide pattern and the second silicon nitride pattern. A buffer pattern having an etching selectivity with respect to the second silicon nitride pattern is formed between the first oxide pattern and the second silicon nitride pattern. Internal stresses that can be generated in sidewalls of the active pattern are sufficiently released and an original shape of the first silicon nitride pattern remains unchanged, thereby improving electrical characteristics of the fin FET.
    • 在鳍状场效应晶体管(FET)中,有源图案在垂直方向上从基板突出,并且在第一水平方向上延伸穿过基板。 第一氮化硅图案形成在有源图案上,并且第一氧化物图案和第二氮化硅图案依次形成在衬底上和活性图案的下部的侧壁上。 在第二氮化硅图案上形成器件隔离层,器件隔离层的顶表面与氧化物图案和第二氮化硅图案的顶表面共面。 在第一氧化物图案和第二氮化硅图案之间形成具有相对于第二氮化硅图案的蚀刻选择性的缓冲图案。 可以在有源图案的侧壁中产生的内部应力被充分地释放,并且第一氮化硅图案的原始形状保持不变,从而改善了鳍式FET的电特性。