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1. 发明授权

US5665607A Method for producing thin film solar cell 失效
标题翻译：薄膜太阳能电池的制造方法
公开(公告)号：US5665607A
公开(公告)日：1997-09-09
申请号：US258745
申请日：1994-06-10
申请人： Yoshitatsu Kawama , Mikio Deguchi , Shigeru Mitsui , Hideo Naomoto , Satoshi Arimoto , Satoshi Hamamoto , Hiroaki Morikawa , Hisao Kumabe
发明人： Yoshitatsu Kawama , Mikio Deguchi , Shigeru Mitsui , Hideo Naomoto , Satoshi Arimoto , Satoshi Hamamoto , Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L21/205 , H01L31/0224 , H01L31/0352 , H01L31/04 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/1892 , H01L31/022425 , H01L31/03529 , H01L31/18 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.
摘要翻译：在制造薄膜太阳能电池的方法中，通过中间层在基板上形成用作发电层的薄半导体膜，穿过薄半导体膜形成多个孔并到达中间层，并且通过通孔蚀刻中间层，从而高效地将薄的半导体膜与基板分离。由于在分离工序中难以对薄的半导体膜施加应力，因此避免了半导体膜的破裂和断裂。此外，由于基板的表面保持良好状态，因此可以重新使用基板，导致生产成本的降低。

2. 发明授权

US5540183A Zone-melting recrystallization of semiconductor materials 失效
标题翻译：半导体材料的区域熔融重结晶
公开(公告)号：US5540183A
公开(公告)日：1996-07-30
申请号：US213051
申请日：1994-03-15
申请人： Mikio Deguchi , Hideo Naomoto , Satoshi Arimoto
发明人： Mikio Deguchi , Hideo Naomoto , Satoshi Arimoto
IPC分类号： C30B13/16 , H01L21/20 , H01L31/042 , H01L31/05 , H01L31/18 , C30B35/00
CPC分类号： H01L21/2022 , C30B13/16 , H01L31/046 , H01L31/0465 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521 , Y10T117/10 , Y10T117/1008 , Y10T117/1016
摘要： An apparatus for zone-melting recrystallization of semiconductor films on semiconductor substrates includes a heater disposed opposite the front surface of a semiconductor substrate and moving across the semiconductor substrate at a uniform rate. The heater may be a strip heating element covered with an insulating and refractory material radiating less heat than the strip heating element. Since heat emitted from surfaces of the heating element except the surface opposite the substrate is intercepted by the insulating and refractory film, the width of the molten zone produced in the semiconductor film is reduced.
摘要翻译：用于半导体衬底上的半导体膜的再结晶区域熔融的装置包括与半导体衬底的前表面相对并以均匀的速率跨过半导体衬底移动的加热器。加热器可以是覆盖有比带状加热元件辐射更少热量的绝缘和耐火材料的带状加热元件。由于除了与基板相对的表面以外的发热体的表面被绝缘耐火材料膜遮断，所以在半导体膜中产生的熔融区域的宽度变小。

3. 发明授权

US5467731A Method of producing a semiconductor structure including a recrystallized film 失效
标题翻译：制造包括再结晶膜的半导体结构的方法
公开(公告)号：US5467731A
公开(公告)日：1995-11-21
申请号：US322375
申请日：1994-10-13
申请人： Satoshi Arimoto , Norio Hayafuji , Mikio Deguchi , Satoshi Hamamoto
发明人： Satoshi Arimoto , Norio Hayafuji , Mikio Deguchi , Satoshi Hamamoto
IPC分类号： H01L21/208 , H01L21/20 , C30B13/20
CPC分类号： H01L21/2022
摘要： A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.
摘要翻译：一种用于制造半导体结构的方法，该半导体结构包括通过绝缘膜形成在半导体衬底本体上的半导体膜，包括：依次在半导体衬底上层叠第一绝缘膜，第一半导体膜和第二绝缘膜; 在预定间隔周期性地布置的第二绝缘膜上形成预定宽度的条状第二半导体膜，并用第三绝缘膜覆盖这些第二半导体膜; 从所述基板的一端到所述条状的第二半导体膜的条带方向的相反端进行区域熔融再结晶的第一半导体膜; 蚀刻第三绝缘膜和未被第一和第二半导体膜夹持的第二绝缘膜的部分; 在蚀刻步骤中暴露的第二半导体膜和第一半导体膜的氧化部分，并蚀刻除去在先前蚀刻之后残留的第二绝缘膜。因此，通过比现有技术更少的工艺步骤获得包括在区域熔融再结晶期间产生的去除亚晶界的再结晶半导体膜的半导体衬底。

4. 发明授权

US5441577A Thin film solar cell and production method therefor 失效
标题翻译：薄膜太阳能电池及其制作方法
公开(公告)号：US5441577A
公开(公告)日：1995-08-15
申请号：US261948
申请日：1994-06-17
申请人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
发明人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
IPC分类号： C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18
CPC分类号： C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要： A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semiconductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译：一种在石墨片基片上制造具有薄膜活性层的薄膜太阳能电池的方法包括以下步骤：将两片石墨粘在一起，在两片片材的第二主表面上形成用作活性层的半导体薄膜石墨，并将两片石墨彼此分离。在该结构中，由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。因此，防止了基板的弯曲，从而容易进行随后的工艺步骤。此外，每单位时间的产品数量翻了一番，从而提高了生产力。

5. 发明授权

US5273911A Method of producing a thin-film solar cell 失效
标题翻译：薄膜太阳能电池的制造方法
公开(公告)号：US5273911A
公开(公告)日：1993-12-28
申请号：US846793
申请日：1992-03-05
申请人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
发明人： Hajime Sasaki , Hiroaki Morikawa , Kazuhiko Satoh , Mikio Deguchi
IPC分类号： C23C14/56 , C23C16/24 , C23C16/50 , C23C16/54 , C30B25/02 , H01L31/0392 , H01L31/048 , H01L31/05 , H01L31/18 , H01L31/0368
CPC分类号： C30B29/06 , C23C14/568 , C23C16/24 , C23C16/50 , C23C16/545 , C30B25/02 , H01L31/02366 , H01L31/03921 , H01L31/0463 , H01L31/048 , H01L31/0508 , H01L31/186 , H01L31/1876 , H01L31/1892 , Y02E10/50 , Y02P70/521 , Y10S148/122
摘要： A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semi-conductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.
摘要翻译：一种在石墨片基片上具有薄膜活性层的薄膜太阳能电池的制造方法，其特征在于，将两片石墨粘合在一起，形成作为活性层的半导体薄膜的工序石墨片，并将两片石墨彼此分离。在该结构中，由上片和半导体薄膜之间的膨胀系数差引起的应力由下片和半导体薄膜之间的膨胀系数差引起的应力消除。因此，防止了基板的弯曲，从而容易地进行后续的工艺步骤。此外，每单位时间的产品数量翻了一番，从而提高了生产力。

6. 发明授权

US5228948A Method for fabricating recrystallized semiconductor film 失效
标题翻译：用于制备重晶体半导体膜的方法
公开(公告)号：US5228948A
公开(公告)日：1993-07-20
申请号：US802481
申请日：1991-12-05
申请人： Mikio Deguchi
发明人： Mikio Deguchi
IPC分类号： H01L21/20 , H01L21/225 , H01L21/84
CPC分类号： H01L21/2022 , H01L21/2007 , H01L21/2254 , Y10S117/913
摘要： A method for fabricating a recrystallized semiconductor film includes forming a polycrystalline or amorphous semiconductor film on a base having a melting point or softening temperature lower than the melting point of the semiconductor film, heating the base to melt it with a first heater, and melting the semiconductor film with a second heater and recrystallizing the semiconductor film while the base is molten. Thereby, generation of stress in the semiconductor film is prevented or reduced and the planarity of the semiconductor film is not damaged by distortion of the substrate and the temperature in the semiconductor film is uniform at the time of recrystallization. As a result, a recrystallized film with good crystallinity is obtained.
摘要翻译：制造再结晶半导体膜的方法包括在具有低于半导体膜的熔点的熔点或软化温度的基底上形成多晶或非晶半导体膜，加热基底以用第一加热器熔化，具有第二加热器的半导体膜，并且在基底熔融时重新结晶半导体膜。由此，防止或减少半导体膜中的应力的产生，并且半导体膜的平坦性不会由于基板的变形而损坏，并且半导体膜中的温度在再结晶时是均匀的。结果，得到结晶度良好的再结晶膜。

7. 发明授权

US5266126A Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5266126A
公开(公告)日：1993-11-30
申请号：US894955
申请日：1992-06-08
申请人： Mikio Deguchi
发明人： Mikio Deguchi
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/03682 , H01L31/03921 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device includes a porous, electrically insulating substrate, a semiconductor film disposed on the substrate, and a metal filling the pores of the substrate, the metal contacting the semiconductor film at the interface of the substrate and the semiconductor film.
摘要翻译：半导体器件包括多孔的电绝缘衬底，设置在衬底上的半导体膜和填充衬底的孔的金属，金属与衬底和半导体膜的界面处的半导体膜接触。

8. 发明授权

US5006192A Apparatus for producing semiconductor devices 失效
标题翻译：用于制造半导体器件的装置
公开(公告)号：US5006192A
公开(公告)日：1991-04-09
申请号：US273556
申请日：1988-11-21
申请人： Mikio Deguchi
发明人： Mikio Deguchi
IPC分类号： H01L21/205 , H01J37/32 , H01L21/31
CPC分类号： H01J37/32862 , Y10S438/905
摘要： An apparatus for treating wafers utilizing the plasma produced by a gas discharge and a method of cleaning such apparatus are disclosed. The apparatus is equipped with a device for forming a high voltage electric field in a space outside of the discharge space in which the wafer treating plasma is generated. The cleaning of the inner surfaces of the vacuum vessel of the apparatus is effected during the periods between the treatments by means of the plasma generated by the gas discharge started and sustained by the electric field device as well as by a main electrode for maintaining the treating discharge. The device for forming a high voltage electric field as mentioned above may comprise a limiter electrode surrounding the treating discharge space; alternatively, it may comprise an auxiliary electrode disposed in the space outside the treating discharge space. First, an etching gas capable of etching the films deposited on the inner surfaces of the vessel of the apparatus is introduced into the vessel as the discharge gas in the cleaning process; next, hydrogen is introduced into the vessel to remove the impurities adsorbed on the surfaces of the vessel. The etching gas may comprise hydrogen or argon.
摘要翻译：公开了一种利用由气体放电产生的等离子体处理晶片的设备和清洁这种设备的方法。该装置配备有在其中产生晶片处理等离子体的放电空间外部的空间中形成高电压电场的装置。在设备的真空容器的内表面的清洁通过由电场装置启动和维持的气体放电产生的等离子体以及通过用于维持处理的主电极而产生的等离子体之间的期间进行卸货。如上所述的用于形成高电压电场的装置可以包括围绕处理放电空间的限制电极; 或者，其可以包括设置在处理放电空间外部的空间中的辅助电极。首先，将能够蚀刻沉积在装置的容器的内表面上的膜的蚀刻气体作为清洗工序中的放电气体引入容器内; 接下来，将氢气引入容器中以除去吸附在容器表面上的杂质。蚀刻气体可以包括氢气或氩气。

9. 发明授权

US5151373A Method of making a solar cell electrode 失效
标题翻译：制造太阳能电池电极的方法
公开(公告)号：US5151373A
公开(公告)日：1992-09-29
申请号：US764363
申请日：1991-09-23
申请人： Mikio Deguchi , Takushi Itagaki , Masaaki Usui
发明人： Mikio Deguchi , Takushi Itagaki , Masaaki Usui
IPC分类号： H01L31/04 , H01L31/0224 , H05K3/32
CPC分类号： H01R4/04 , H01L31/022425 , H01L2924/0002 , H05K3/321 , Y02E10/50
摘要： An electrode structure of a solar cell includes a metal wire fixed to the light incident surface of the solar cell with an electrically conductive adhesive. An electrode production method of a solar cell includes applying an electrically conductive adhesive to at least one of a portion of a metal wire and a portion of the light incident surface of the solar cell, pressing the metal wire into a predetermined position of the light incident surface of the solar cell, and solidifying the conductive adhesive to fix the metal wire.

10. 发明授权

US4760556A Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US4760556A
公开(公告)日：1988-07-26
申请号：US911431
申请日：1986-09-25
申请人： Mikio Deguchi , Kazuyasu Fujishima , Yasushi Terada
发明人： Mikio Deguchi , Kazuyasu Fujishima , Yasushi Terada
IPC分类号： G11C17/00 , G11C11/404 , G11C14/00 , G11C16/04 , G11C11/40
CPC分类号： G11C14/00
摘要： Each of the memory cells forming a nonvolatile RAM comprises one floating-gate transistor and one capacitor. When the power source is turned on, storage of information is performed according to the amount of electric charge stored in each capacitor. When the power source is turned off, nonvolatile storage of information is performed according to the level of the threshold voltage of each floating-gate transistor.
摘要翻译：形成非易失性RAM的每个存储单元包括一个浮栅晶体管和一个电容器。当电源接通时，根据每个电容器中存储的电荷量进行信息存储。当电源关闭时，根据每个浮栅晶体管的阈值电压的电平执行信息的非易失性存储。

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