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1. 发明授权

US6074514A High selectivity etch using an external plasma discharge 失效
公开(公告)号：US6074514A
公开(公告)日：2000-06-13
申请号：US20959
申请日：1998-02-09
申请人： Claes Bjorkman , Hongching Shan , Michael Welch
发明人： Claes Bjorkman , Hongching Shan , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/02
CPC分类号： H01J37/32871
摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

2. 发明授权

US06387288B1 High selectivity etch using an external plasma discharge 失效
标题翻译：使用外部等离子体放电的高选择性蚀刻
公开(公告)号：US06387288B1
公开(公告)日：2002-05-14
申请号：US09556951
申请日：2000-04-21
申请人： Claes Bjorkman , Hongching Shan , Michael Welch
发明人： Claes Bjorkman , Hongching Shan , Michael Welch
IPC分类号： H01L21302
CPC分类号： H01J37/32871
摘要： An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.
摘要翻译：在蚀刻剂气体进入等离子体反应器的初级处理室之前，从蚀刻剂气体形成的等离子体中清除蚀刻剂物质的装置和方法。至少有一个清除室，每个清除室在其入口处连接到蚀刻剂气体源，并在其出口连接到主处理室的气体分配装置。每个清扫室具有辐射施加器，其辐射扫气室的内部，并从流化床中的蚀刻剂气体从蚀刻剂气体源到主处理室的气体分配装置产生等离子体。施加器使用感应放电，电容放电，直流（DC）放电或微波放电来照射扫气室的内部并点燃等离子体。清扫室内还设有一种蚀刻物质清除源。该源提供与等离子体相互作用的清除材料，以清除由等离子体中的蚀刻剂气体解离产生的蚀刻剂物质，并形成由来自蚀刻剂物质和清除源的物质构成的蚀刻副产物。清除室可以按原样或以改进形式用作激发室，以在最佳条件下激发气体并将改性气体进料到主室中。如果该源与被激发的气体不利地相互作用，则通过去除其清除源来改进扫气室。

3. 发明授权

US6113731A Magnetically-enhanced plasma chamber with non-uniform magnetic field 失效
标题翻译：具有不均匀磁场的磁增强等离子体室
公开(公告)号：US6113731A
公开(公告)日：2000-09-05
申请号：US735444
申请日：1997-01-02
申请人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
发明人： Hongching Shan , Roger Lindley , Claes Bjorkman , Xue Yu Qian , Richard Plavidal , Bryan Pu , Ji Ding , Zongyu Li , Kuang-Han Ke , Michael Welch
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/687 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/3266 , H01L21/68735
摘要： A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals. During each transition between the time intervals, the current supplied to each electromagnet is changed relatively slowly or relatively quickly according to whether the current change includes a change in polarity.
摘要翻译：具有磁体的等离子体室产生磁场，使得在与工件平行并邻近工件的区域内，磁场的方向近似为（i）磁场强度梯度的矢量交叉积，和（ii）从工件表面朝向等离子体垂直延伸的矢量。或者，等离子体室包括北磁极和位于工件周围的不同方位角处的南磁极。南磁极相对于北磁极的方位角是围绕中心轴顺时针旋转的，每个磁极面对的方向远离工件区域的中心轴线。本发明的另一方面是等离子体室，其具有由围绕工件周边间隔开的电磁体产生的旋转磁场，其在连续的时间间隔期间接收连续的固定量的电流。在时间间隔期间的每个转换期间，根据电流变化是否包括极性变化，提供给每个电磁体的电流相对缓慢或相对较快地改变。

4. 发明授权

US06568346B2 Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply 失效
标题翻译：分布式电感耦合等离子体源和用于将感应线圈耦合到RF电源的电路
公开(公告)号：US06568346B2
公开(公告)日：2003-05-27
申请号：US09929902
申请日：2001-08-14
申请人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
发明人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
摘要翻译：用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。在第一方面，楔形感应线圈阵列分布在一个圆周围。相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振电源。

5. 发明授权

US06797639B2 Dielectric etch chamber with expanded process window 失效
公开(公告)号：US06797639B2
公开(公告)日：2004-09-28
申请号：US10254969
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H01L2100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

6. 发明授权

US06273022B1 Distributed inductively-coupled plasma source 失效
标题翻译：分布式电感耦合等离子体源
公开(公告)号：US06273022B1
公开(公告)日：2001-08-14
申请号：US09039216
申请日：1998-03-14
申请人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
发明人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
IPC分类号： C23C16507
CPC分类号： H01J37/321
摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of induction coils is distributed over a geometric surface having a circular transverse section. Each coil has a transverse section which is wedge-shaped so that the adjacent sides of any two adjacent coils in the array are approximately parallel to a radius of the circular transverse section of the geometric surface. The sides of adjacent coils being parallel enhances the radial uniformity of the magnetic field produced by the coil array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the near end of each coil connects directly to electrical ground. In second and third embodiments, two coils are connected in series at the near end of each coil. In the second embodiment, the opposite (“RF hot”) end of each coil is connected to a respective balanced output of an RF power supply. In the third embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
摘要翻译：用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。在第一方面，感应线圈阵列分布在具有圆形横截面的几何表面上。每个线圈具有楔形的横截面，使得阵列中任何两个相邻线圈的相邻侧面几乎平行于几何表面的圆形横截面的半径。相邻线圈的平行侧面增强了由线圈阵列产生的磁场的径向均匀性。在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。在一个实施例中，每个线圈的近端直接连接到电气接地。在第二和第三实施例中，两个线圈在每个线圈的近端串联连接。在第二实施例中，每个线圈的相对（“RF热”）端连接到RF电源的相应的平衡输出端。在第三实施例中，一个线圈的热端连接到RF电源的不平衡输出，另一个线圈的热端通过电容器连接到电接地，该电容器以与第二线圈的频率谐振的电容器射频电源。

7. 发明授权

US06825618B2 Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply 失效
标题翻译：分布式电感耦合等离子体源和电路，用于将感应线圈耦合到RF电源
公开(公告)号：US06825618B2
公开(公告)日：2004-11-30
申请号：US10442424
申请日：2003-05-20
申请人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
发明人： Bryan Y. Pu , Hongching Shan , Claes Bjorkman , Kenny Doan , Mike Welch , Richard Raymond Mett
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.
摘要翻译：用于在半导体处理室中将电力感应耦合到等离子体的装置和方法。在第一方面，楔形感应线圈阵列分布在一个圆周围。相邻线圈的侧面是平行的，从而增强阵列产生的磁场的径向均匀性。在第二方面，通过将每个感应线圈连接到电源使得感应线圈和等离子体之间的静电耦合最小化，使得最接近等离子体的线圈的线的转弯接近电接地电位。在一个实施例中，一个线圈的热端连接到RF电源的不平衡输出端，另一个线圈的热端通过电容器连接到电接地，电容器以RF的频率与后一个线圈谐振电源。

8. 发明授权

US06716302B2 Dielectric etch chamber with expanded process window 有权
标题翻译：介质蚀刻室具有扩展的工艺窗口
公开(公告)号：US06716302B2
公开(公告)日：2004-04-06
申请号：US10253496
申请日：2002-09-24
申请人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
发明人： James D Carducci , Hamid Noorbakhsh , Evans Y Lee , Bryan Y Pu , Hongching Shan , Claes Bjorkman , Siamak Salimian , Paul E Luscher , Michael D Welch
IPC分类号： H05H100
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
摘要翻译：一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

9. 发明授权

US06403491B1 Etch method using a dielectric etch chamber with expanded process window 失效
标题翻译：使用具有扩展工艺窗口的电介质蚀刻室的蚀刻方法
公开(公告)号：US06403491B1
公开(公告)日：2002-06-11
申请号：US09704867
申请日：2000-11-01
申请人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
发明人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
IPC分类号： H01L213065
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.
摘要翻译：一种用于在具有扩展的处理窗口的热控等离子体蚀刻室中蚀刻电介质的方法。该方法适于结合腔室的热控制和高排气能力的优点。 Etchent气体包括碳氢化合物，氧气和惰性气体。提供了解释在电容耦合蚀刻等离子体中使用六氟-1,3-丁二烯的方法。该方法对于创建通孔，自对准触点，双镶嵌和其他电介质蚀刻非常有用。

10. 发明授权

US06432259B1 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates 有权
标题翻译：等离子体反应器冷却的天花板，具有热隔离等离子体加热的微型气体分布板阵列
公开(公告)号：US06432259B1
公开(公告)日：2002-08-13
申请号：US09461682
申请日：1999-12-14
申请人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
发明人： Hamid Noorbakhsh , Michael Welch , Siamak Salimian , Paul Luscher , Hongching Shan , Kaushik Vaidya , Jim Carducci , Evans Lee
IPC分类号： H05H100
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板被支撑在腔室外壳构件上，并且具有出口表面，该出口表面是所述晶片支撑件的内表面区域的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

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