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    • 2. 发明授权
    • Automating photolithography in the fabrication of integrated circuits
    • 在制造集成电路时自动化光刻
    • US06418353B1
    • 2002-07-09
    • US09064802
    • 1998-04-22
    • Michael D. RostokerNicholas F. PaschAshok K. Kapoor
    • Michael D. RostokerNicholas F. PaschAshok K. Kapoor
    • G06F1900
    • G03F7/705G03F7/70433G03F7/70625
    • Automated photolithography of integrated circuit wafers is enabled with a processor connected to a Rayleigh derator, a form factor generator, a logic synthesizer, a layout generator, a lithography module and a wafer process. The Rayleigh derator receives manufacturing information resulting from yield data in the wafer process, and this manufacturing data is then used to derate the theoretical minimum feature size available for etching wafer masks given a known light source and object lens numerical aperture. This minimum feature size is then used by a form factor generator in sizing transistors in a net list to their smallest manufacturable size. A logic synthesizer then converts the net list into a physical design using a layout generator combined with user defined constraints. This physical design is then used by the mask lithography module to generate wafer masks for use in the semiconductor manufacturing. Manufacturing data including process and. yield parameters is then transferred back to the Rayleigh processor for use in the designing of subsequent circuits. In this way, a direct coupling exists between the measurement of wafer process parameters and the automated sizing of semiconductor devices, enabling the production of circuits having the smallest manufacturable device sizes available for the given lithography and wafer process.
    • 集成电路晶片的自动光刻可通过连接到瑞利分离器,形状因子发生器,逻辑合成器,布局发生器,光刻模块和晶片工艺的处理器来实现。 Rayleigh变矩器接收由晶片工艺中的屈服数据产生的制造信息,然后使用该制造数据降低可用于蚀刻具有已知光源和物镜数值孔径的晶片掩模的理论最小特征尺寸。 然后,这种最小特征尺寸由形状因子发生器用于将网络列表中的晶体管调整到其最小可制造尺寸。 然后,逻辑合成器将网络列表转换为使用布局生成器与用户定义的约束组合的物理设计。 然后该掩模光刻模块将该物理设计用于半导体制造中使用的晶片掩模。 制造数据包括流程和。 然后将产量参数转移回瑞利处理器用于后续电路的设计。 以这种方式,在晶片工艺参数的测量和半导体器件的自动化尺寸之间存在直接耦合,使得能够生产具有可用于给定光刻和晶片工艺的最小可制造器件尺寸的电路。
    • 3. 发明授权
    • Programmable triangular shaped device having variable gain
    • 具有可变增益的可编程三角形器件
    • US06312980B1
    • 2001-11-06
    • US09092827
    • 1998-06-05
    • Michael D. RostokerJames S. KofordRanko ScepanovicEdwin R. JonesGobi R. PadmanahbenAshok K. KapoorValeriv B. KudryavtsevAlexander E. AndreevStanislav V. AleshinAlexander S. Podkolzin
    • Michael D. RostokerJames S. KofordRanko ScepanovicEdwin R. JonesGobi R. PadmanahbenAshok K. KapoorValeriv B. KudryavtsevAlexander E. AndreevStanislav V. AleshinAlexander S. Podkolzin
    • H01L2182
    • H01L27/108G06F17/5072G06F17/5077G11C5/025G11C5/063H01L23/528H01L27/11H01L27/1104H01L27/11807H01L29/0657H01L2924/0002Y10S438/965H01L2924/00
    • Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60°. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a “tri-ister” is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
    • 披露了几个发明。 公开了一种使用六角形电池的电池结构。 该体系结构不限于六角形细胞。 单元可以由两个或更多个六边形的簇,通过三角形,平行四边形以及能够容纳各种单元格形状的其他多边形来定义。 公开了多向非正交三层金属布线。 该架构可以与三向路由组合以用于特别有利的设计。 在三向布线布线中,用于集成电路的微电子单元的互连端子的电导体优选地在彼此成角度地移位60°的三个方向上延伸。 沿三个方向延伸的导体优选地以三个不同的层形成。 公开了一种使半导体器件中的导线长度最小化的方法。 公开了一种使半导体器件中的金属间电容最小化的方法。 公开了一种称为“三元器件”的新型器件。 公开了三角形器件,包括三角形与非门,三角形与门和三角形或门。 公开了三角形运算放大器和三极管。 公开了三角形读出放大器。 公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列,其包括互连这种阵列的方法。 公开了一种可编程可变驱动晶体管。 公开了用于设计和制造半导体器件的CAD算法和方法,其特别适用于所公开的架构和三向三金属层布线。
    • 5. 发明授权
    • Fabricating a semiconductor device using precursor CMOS semiconductor
substrate of a given configuration
    • 使用给定配置的前驱CMOS半导体衬底制造半导体器件
    • US5874327A
    • 1999-02-23
    • US711283
    • 1996-09-09
    • Michael D. RostokerNicholas F. Pasch
    • Michael D. RostokerNicholas F. Pasch
    • H01L21/266H01L21/3105H01L21/8238
    • H01L21/31051H01L21/266H01L21/3105H01L21/31053H01L21/823871Y10S438/981
    • Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or regions for the underlying MOS structure are also disclosed, using thick oxide growths on the surface of the substrate to mask implantation of ions into the wells. A technique for creating a pair of adjacent complementary oppositely-doped wells, such as for a CMOS structure, using a thick oxide growths as a mask is also disclosed. One of the methods of planarizing the one or more layers involves depositing, densifying and re-flowing a layer of glass on top of the topological layer. Another method of planarizing the one or more layers involves depositing, densifying and chemical-mechanically polishing the deposited and densified glass, thereby avoiding an additional temperature cycle (i.e., for re-flowing the glass) which would adversely affect underlying diffusions.
    • 公开了基于下面的MOS结构在半导体器件中平面化具有不规则顶表面拓扑的一个或多个层的方法。 还公开了为底层MOS结构产生掺杂阱或区域的方法,其使用在衬底表面上的厚氧化物生长来掩蔽将离子注入到阱中。 还公开了一种用于产生一对相邻的互补相对掺杂阱的技术,例如使用厚氧化物生长作为掩模的CMOS结构。 对一个或多个层进行平坦化的方法之一包括在拓扑层顶部沉积,致密化和再流动玻璃层。 平面化一个或多个层的另一种方法包括沉积,致密化和化学机械抛光沉积的和致密化的玻璃,从而避免对底层扩散产生不利影响的附加温度循环(即,用于重新流动玻璃)。
    • 6. 发明授权
    • Optimization processing for integrated circuit physical design
automation system using parallel moving windows
    • 使用平行移动窗口的集成电路物理设计自动化系统的优化处理
    • US5870313A
    • 1999-02-09
    • US987865
    • 1997-12-09
    • Douglas B. BoyleJames S. KofordRanko ScepanovicEdwin R. JonesMichael D. Rostoker
    • Douglas B. BoyleJames S. KofordRanko ScepanovicEdwin R. JonesMichael D. Rostoker
    • G06F17/50
    • G06F17/5072
    • One or more non-overlapping moving windows are positioned over a placement of cells for an integrated circuit chip to delineate respective subsets of cells. A fitness improvement operation such as simulated evolution is performed on the subsets simultaneously using parallel processors. The windows are either moved to specifically identified high interconnect congestion areas of the placement, or are moved across the placement in a raster type pattern such that each area of the placement is processed at least once. Exchange of misplaced cells between subsets can be accomplished by dimensioning the windows and designing the window movement pattern such that the subsets overlap. Alternatively, such exchange can be accomplished by using two sets of windows of different sizes. As yet another alternative, the improvement operation can allow misplaced cells to move to a border area outside a window. Each misplaced cell is placed on a list, and then moved to the centroid of a net of cells to which it is connected, which can be outside the subset that originally included the misplaced cell.
    • 一个或多个非重叠移动窗口位于用于集成电路芯片的单元的放置上以描绘相应的单元子集。 使用并行处理器同时对子集执行诸如模拟演化的健身改善操作。 窗口被移动到该位置的专门识别的高互连拥塞区域,或以栅格类型模式移动到该位置,使得该位置的每个区域至少被处理一次。 可以通过对窗口进行尺寸设计和设计窗口移动图案以使得子集重叠来实现子集之间的错放单元的交换。 或者,这种交换可以通过使用两组不同大小的窗口来完成。 作为另一替代方案,改进操作可以允许错放的单元移动到窗外的边界区域。 每个放错的单元格放在一个列表上,然后移动到它所连接的单元格网格的质心,它可能在最初包含放错单元格的子集之外。
    • 8. 发明授权
    • Advanced programmable interrupt controller (APIC) with high speed serial
data bus
    • 高级可编程中断控制器(APIC),具有高速串行数据总线
    • US5832279A
    • 1998-11-03
    • US863373
    • 1997-05-27
    • Michael D. RostokerSushant VermanRichard EganJerry Chow
    • Michael D. RostokerSushant VermanRichard EganJerry Chow
    • G06F9/48G06F13/24G06F9/46
    • G06F9/4812G06F13/24Y02B60/1228Y02B60/144
    • A high speed Advanced Programmable Interrupt Controller (APIC) system includes a plurality of local units for prioritizing and passing interrupts, an Input/Output (I/O) unit for feeding interrupts to the local units, and a serial link data transmission system for interconnecting the I/O unit and the local units. The I/O unit and each local unit have a parallel I/O interface. The serial link transmission system includes a parallel signal bus connected to the parallel I/O interface of the I/O unit; a plurality of first serial link transceivers having parallel I/O interfaces connected to the parallel signal bus, and serial I/O interfaces respectively; a plurality of second serial link transceivers having parallel I/O interfaces connected to the parallel I/O interfaces of the local units, and serial I/O interfaces respectively; and a plurality of serial transmission lines interconnecting the serial I/O interfaces of first serial link transceivers and the serial I/O interfaces of second serial link transceivers respectively.
    • 高速高级可编程中断控制器(APIC)系统包括用于对中断进行优先排序和通过的多个本地单元,用于向本地单元馈送中断的输入/输出(I / O)单元和用于互连的串行链路数据传输系统 I / O单元和本地单元。 I / O单元和本地单元具有并行I / O接口。 串行链路传输系统包括连接到I / O单元的并行I / O接口的并行信号总线; 具有分别连接到并行信号总线和串行I / O接口的并行I / O接口的多个第一串行链路收发器; 具有连接到本地单元的并行I / O接口的并行I / O接口的多个第二串行链路收发器和串行I / O接口; 以及分别将第一串行链路收发器的串行I / O接口和第二串行链路收发器的串行I / O接口互连的多个串行传输线。