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1. 发明授权

US5889329A Tri-directional interconnect architecture for SRAM 失效
标题翻译：用于SRAM的三向互连架构
公开(公告)号：US5889329A
公开(公告)日：1999-03-30
申请号：US517339
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L23/535
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

2. 发明授权

US5822214A CAD for hexagonal architecture 失效
标题翻译：六角架构CAD
公开(公告)号：US5822214A
公开(公告)日：1998-10-13
申请号：US517171
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , G06F15/60
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arrangement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，用于互连集成电路的微电子单元的端子的电导体优选地在三个方向上彼此成角度地移位60度。沿三个方向延伸的导体优选地形成为三个不同的层。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

3. 发明授权

US06312980B1 Programmable triangular shaped device having variable gain 失效
标题翻译：具有可变增益的可编程三角形器件
公开(公告)号：US06312980B1
公开(公告)日：2001-11-06
申请号：US09092827
申请日：1998-06-05
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： H01L2182
CPC分类号： H01L27/108 , G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/528 , H01L27/11 , H01L27/1104 , H01L27/11807 , H01L29/0657 , H01L2924/0002 , Y10S438/965 , H01L2924/00
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60°. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a “tri-ister” is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布线中，用于集成电路的微电子单元的互连端子的电导体优选地在彼此成角度地移位60°的三个方向上延伸。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

4. 发明授权

US5808330A Polydirectional non-orthoginal three layer interconnect architecture 失效
标题翻译：多向非正弦三层互连架构
公开(公告)号：US5808330A
公开(公告)日：1998-09-15
申请号：US517441
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L29/41 , H01L27/088
CPC分类号： G11C5/025 , G06F17/5072 , G06F17/5077 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , G03F1/36 , H01L29/0657 , H01L2924/0002
摘要： A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

5. 发明授权

US5789770A Hexagonal architecture with triangular shaped cells 失效
标题翻译：六角形结构与三角形细胞
公开(公告)号：US5789770A
公开(公告)日：1998-08-04
申请号：US517236
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriv B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L27/105 , H01L29/78
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

6. 发明授权

US5742086A Hexagonal DRAM array 失效
标题翻译：六角形DRAM阵列
公开(公告)号：US5742086A
公开(公告)日：1998-04-21
申请号：US517153
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L29/78 , H01L29/41
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

7. 发明授权

US5864165A Triangular semiconductor NAND gate 失效
标题翻译：三角半导体NAND门
公开(公告)号：US5864165A
公开(公告)日：1999-01-26
申请号：US517451
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L29/772
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arrangement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，用于互连集成电路的微电子单元的端子的电导体优选地在彼此成角度地移位60度的三个方向上延伸。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

8. 发明授权

US5973376A Architecture having diamond shaped or parallelogram shaped cells 失效
标题翻译：具有菱形或平行四边形的细胞的建筑
公开(公告)号：US5973376A
公开(公告)日：1999-10-26
申请号：US517406
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L31/352 , H01L23/52 , H01L29/78
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

9. 发明授权

US5872380A Hexagonal sense cell architecture 失效
标题翻译：六角感知单元架构
公开(公告)号：US5872380A
公开(公告)日：1999-02-16
申请号：US517189
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valerity B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valerity B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L27/10
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arrangement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，用于互连集成电路的微电子单元的端子的电导体优选地在彼此成角度地移位60度的三个方向上延伸。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

10. 发明授权

US5801422A Hexagonal SRAM architecture 失效
标题翻译：六角SRAM架构
公开(公告)号：US5801422A
公开(公告)日：1998-09-01
申请号：US517266
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L29/78
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

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