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    • 2. 发明授权
    • Apparatus for purifying crystals
    • 晶体净化装置
    • US4806318A
    • 1989-02-21
    • US37702
    • 1987-04-13
    • Shigeru SaitohMasaki Shimada
    • Shigeru SaitohMasaki Shimada
    • B01D9/02B01D9/00
    • B01D9/0004
    • An apparatus for purifying crystals comprises a crystal purifying tower having a transverse cross-section of two partially overlapping circles, stirrers each comprising a rotational shaft passing through the center of each of the circles and having blade members disposed spirally on its surface, a solid-liquid separation plate disposed at the bottom portion of the tower, a liquid take out means disposed below the separation plate, a starting crude crystal feed means disposed above the separation plate, a purified crystal take out means disposed at the upper portion of the tower, heating means disposed in the tower in a multistage manner along the longitudinal direction of the tower, and purified crystal circulation means for cooling a portion of purified crystals taken out from the tower and feeding back the cooled crystals to the tower at at least one portion of the tower.
    • 一种纯化晶体的装置包括具有两个部分重叠的圆的横截面的晶体净化塔,每个搅拌器包括通过每个圆的中心的旋转轴,并且在其表面上螺旋地设置有叶片构件, 设置在塔的底部的液体分离板,设置在分离板下方的液体取出装置,设置在分离板上方的起始粗晶体进料装置,设置在塔的上部的纯化晶体取出装置, 加热装置沿着塔的纵向方向以多级方式设置在塔中,以及纯化的晶体循环装置,用于冷却从塔中取出的一部分纯化晶体,并将冷却的晶体在至少一部分 塔。
    • 3. 发明授权
    • Data-storing device
    • 数据存储设备
    • US06845422B2
    • 2005-01-18
    • US09986614
    • 2001-11-09
    • Masaki ShimadaMitsuru WatanabeKiyotaka Murakami
    • Masaki ShimadaMitsuru WatanabeKiyotaka Murakami
    • G06F1/26G06F1/18G06F3/00G06F3/06G06F13/14G06F13/38G06F13/40G11C29/00
    • G06F1/18G06F1/266G06F3/0601G06F13/387G06F2003/0692Y02D10/14Y02D10/151
    • The present invention concerns a data-storing device, which is coupled to a personal computer through an interface and can enlarge a number of and a kind of devices connectable to the personal computer. The data-storing device includes an interfacing circuit that includes a data communication path through which the data can be bilaterally communicated between the device and an external device, which is coupled to the device with an interface cable, and a power-supplying path through which a power current can be bilaterally supplied between the device and the external device, wherein the interface cable also includes the data communication path and the power-supplying path; a data-storing unit to store the data sent from the interfacing circuit; and a plurality of interface connecting ports serving as input/output terminals of the interfacing circuit, wherein the interface cable can be connected to one of the interface connecting ports.
    • 本发明涉及一种数据存储装置,其通过接口耦合到个人计算机,并且可以扩大可连接到个人计算机的多个设备和一种设备。 数据存储装置包括接口电路,其包括数据通信路径,通过该数据通信路径,数据可以在设备和外部设备之间进行双向通信,外部设备使用接口电缆耦合到设备,以及供电路径, 可以在设备和外部设备之间双向提供电力电流,其中接口电缆还包括数据通信路径和供电路径; 数据存储单元,用于存储从接口电路发送的数据; 以及用作接口电路的输入/输出端子的多个接口连接端口,其中接口电缆可以连接到接口连接端口之一。
    • 5. 发明授权
    • Round fiber-reinforced plastic strand, manufacturing method thereof, and fiber-reinforced sheet
    • 圆形纤维增强塑料线,其制造方法和纤维增强片
    • US08367194B2
    • 2013-02-05
    • US12529736
    • 2008-03-10
    • Toshikazu TakedaMasaki ShimadaHidehiko HinoMasaki Arazoe
    • Toshikazu TakedaMasaki ShimadaHidehiko HinoMasaki Arazoe
    • D04H1/00B29D28/00B32B19/00D02G3/00
    • E04C5/07B29C70/16B29C70/50C08J5/24Y10T428/24132Y10T428/249924Y10T428/29Y10T428/2913Y10T428/2969
    • It is an object of the present invention to provide round fiber-reinforced plastic strand, a manufacturing method thereof, and a fiber-reinforced sheet which eliminate limitation in forming speed and limit on number of products capable of being manufactured at a time, do not require use of a release agent, eliminate the necessity of operations such as roughing after forming, and thus permit a considerable reduction of the manufacturing cost and a remarkable increase in the product quality. The manufacturing method of the round fiber-reinforced plastic strand of the present invention comprises (a) a step of continuously feeding reinforcing fiber bundles f1 each comprising a plurality of reinforcing fibers arranged in a direction while twisting the reinforcing fiber bundles f1; (b) a step of impregnating the reinforcing fiber bundles f1 fed continuously with a matrix resin R; and (c) a step of heating the resin-impregnated reinforcing fiber bundles f2 while tensioning to a prescribed intensity, thereby forming the reinforcing fiber bundle into a circular cross-section and hardening the resin, and manufactures a fiber-reinforced plastic strand 2 having a circular cross-section.
    • 本发明的目的是提供圆形纤维增强塑料股,其制造方法和纤维增强片,其消除了成形速度的限制并限制了能够一次制造的产品的数量,不要 需要使用脱模剂,消除了成型后的粗加工等操作的必要性,能够显着降低制造成本,显着提高产品质量。 本发明的圆形纤维增强塑料线材的制造方法包括:(a)连续地加压增强纤维束f1的步骤,每个加强纤维束f1包括沿加强纤维束f1扭转的方向布置的多个增强纤维; (b)浸渍连续供给基体树脂R的强化纤维束f1的工序; 和(c)在张紧规定强度的同时加热树脂浸渍的增强纤维束f2的步骤,从而将增强纤维束形成为圆形横截面并硬化树脂,并制造具有 圆形横截面。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090026546A1
    • 2009-01-29
    • US12178716
    • 2008-07-24
    • Masaki SHIMADAToshio YAMADAHisanori ITOKatsuhiro KOGA
    • Masaki SHIMADAToshio YAMADAHisanori ITOKatsuhiro KOGA
    • H01L27/088
    • H01L27/11803H01L27/0207
    • To provide a technique capable of achieving high integration of semiconductor devices. A standard cell is provided in an n-type well, and includes a p+-type diffusion layer and n+-type diffusion layer covered with a metal silicide film. The p+-type diffusion layer constitutes a source/drain of an MIS transistor, and the n+-type diffusion layer constitutes a tap. The p+-type diffusion layer is electrically coupled to a wiring layer via a contact, and the n+-type diffusion layer is electrically coupled to a wiring layer via a contact. Moreover, the p+-type diffusion layer is in contact with the n+-type diffusion layer. A power supply potential supplied to the source node of the MIS transistor is provided using two layers, i.e., the diffusion layer and the wiring layer.
    • 提供能够实现半导体器件的高集成度的技术。 标准单元设置在n型阱中,并且包括被金属硅化物膜覆盖的p +型扩散层和n +型扩散层。 p +型扩散层构成MIS晶体管的源极/漏极,n +型扩散层构成水龙头。 p +型扩散层通过接触电耦合到布线层,并且n +型扩散层经由接触电耦合到布线层。 此外,p +型扩散层与n +型扩散层接触。 提供给MIS晶体管的源节点的电源电位使用两层即扩散层和布线层来提供。