专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08628985B2 Light emitting devices with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的发光器件
公开(公告)号：US08628985B2
公开(公告)日：2014-01-14
申请号：US13252398
申请日：2011-10-04
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到具有由有源区发射的光的折射率的透明透镜，优选大于约1.5，更优选大于约1.8。将透明透镜粘合到具有包括有源区的半导体层的层叠的发光器件的方法包括提高透镜和叠层的温度并施加压力以将透镜和叠层压在一起。将高折射率透镜粘合到发光器件通过减少由于全内反射引起的损耗来提高发光器件的光提取效率。有利地，可以在不使用密封剂的情况下实现这种改进。

2. 发明申请

US20100109568A1 COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LLIGHT EMITTING DEVICES 有权
标题翻译：磷光转换发光装置阵列的通用光学元件
公开(公告)号：US20100109568A1
公开(公告)日：2010-05-06
申请号：US12686209
申请日：2010-01-12
申请人： Michael D. CAMRAS , William R. IMLER , Franklin J. WALL, JR. , Frank M. STERANKA , Michael R. KRAMES , Helena TICHA , Ladislav TICHY , Robertus G. Alferink
发明人： Michael D. CAMRAS , William R. IMLER , Franklin J. WALL, JR. , Frank M. STERANKA , Michael R. KRAMES , Helena TICHA , Ladislav TICHY , Robertus G. Alferink
IPC分类号： H05B37/02 , H01L21/50 , H01L33/00
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the LEDs to produce a desired correlated color temperature. The optical element may be bonded to the phosphor converted light emitting devices. The optical element may be a dome mounted over the phosphor converted light emitting devices and filled with an encapsulant.
摘要翻译：设备具有产生广谱光的多个磷光体转换发光器件（LED）的阵列。磷光体转换的LED可以产生具有不同相关色温（CCT）的光，并且被有助于混合来自LED的光以产生期望的相关色温的光学元件覆盖。光学元件可以结合到磷光体转换的发光器件上。光学元件可以是安装在磷光体转换的发光器件上并且填充有密封剂的圆顶。

3. 发明授权

US07009213B2 Light emitting devices with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的发光器件
公开(公告)号：US07009213B2
公开(公告)日：2006-03-07
申请号：US10633054
申请日：2003-07-31
申请人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
发明人： Michael D. Camras , Gerard Harbers , William R. Imler , Matthijs H. Keuper , Paul S. Martin , Douglas W. Pocius , Frank M. Steranka , Helena Ticha , Ladislav Tichy , R. Scott West
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/44 , H01L33/505 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.
摘要翻译：一种器件包括结合到光学元件的发光半导体器件。在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。在一些实施方案中，该键基本上不含有机基粘合剂。

4. 发明授权

US06657300B2 Formation of ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US06657300B2
公开(公告)日：2003-12-02
申请号：US09755935
申请日：2001-01-05
申请人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
IPC分类号： H01L2348
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

5. 发明授权

US5115286A Electro-optical device with inverted transparent substrate and method for making same 失效
标题翻译：带反转透明基板的电光装置及其制造方法
公开(公告)号：US5115286A
公开(公告)日：1992-05-19
申请号：US663056
申请日：1991-02-27
申请人： Michael D. Camras , Louis W. Cook , Virginia M. Robbins
发明人： Michael D. Camras , Louis W. Cook , Virginia M. Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/0062
摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.
摘要翻译：通过外延地生长有源器件层，然后在不透明晶片上生长透明衬底层，制造具有透明衬底的电光器件。随后去除不透明晶片。有源器件层具有足够低的扩散性的掺杂剂，使得它们的电子特性在透明衬底层的生长过程中长时间暴露于高温下不会受到不利影响。在液相外延（LPE）方法中，使用重复的温度循环技术，其中每次冷却后温度重复升高，以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。在生长和温度升温期之间，装置储存在LPE反应器内。当外延层可氧化时，在生长之间和在升温期间暂时在其上生长不可氧化的盖。随后在下一层生长之前在升高的温度下将盖除去。该技术还可用于生长与活性活性层晶格失配的透明衬底。

6. 发明申请

US20120043564A1 COMMON OPTICAL ELEMENT FOR AN ARRAY OF PHOSPHOR CONVERTED LIGHT EMITTING DEVICES 有权
标题翻译：磷光转换发光装置阵列的通用光学元件
公开(公告)号：US20120043564A1
公开(公告)日：2012-02-23
申请号：US13288291
申请日：2011-11-03
申请人： MICHAEL D. CAMRAS , WILLIAM R. IMLER , FRANKLIN J. WALL, JR. , FRANK M. STERANKA , MICHAEL R. KRAMES , HELENA TICHA , LADISLAV TICHY , Robertus G. Alferink
发明人： MICHAEL D. CAMRAS , WILLIAM R. IMLER , FRANKLIN J. WALL, JR. , FRANK M. STERANKA , MICHAEL R. KRAMES , HELENA TICHA , LADISLAV TICHY , Robertus G. Alferink
IPC分类号： H01L33/08
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.
摘要翻译：设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。或者，可以使用多个光学元件。光学元件或LED管芯可以用波长转换材料的涂层覆盖。在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

7. 发明申请

US20090072263A1 Color Control By Alteration of Wavelength Converting Element 有权
标题翻译：通过改变波长转换元件进行色彩控制
公开(公告)号：US20090072263A1
公开(公告)日：2009-03-19
申请号：US12277230
申请日：2008-11-24
申请人： Steven Paolini , Michael D. Camras , Oscar Arturo Chao Pujol , Frank M. Steranka , John E. Epler
发明人： Steven Paolini , Michael D. Camras , Oscar Arturo Chao Pujol , Frank M. Steranka , John E. Epler
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/508 , H01L33/22 , H01L33/58 , H01L2224/73253 , H01L2933/0041
摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.
摘要翻译：通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。可以通过减少或增加波长转换材料的量来校正波长转换构件。在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

8. 发明授权

US07064355B2 Light emitting diodes with improved light extraction efficiency 有权
公开(公告)号：US07064355B2
公开(公告)日：2006-06-20
申请号：US09880204
申请日：2001-06-12
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/405 , H01L33/505 , H01L33/60
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.

9. 发明授权

US06914272B2 Formation of Ohmic contacts in III-nitride light emitting devices 有权
标题翻译：在III族氮化物发光器件中形成欧姆接触
公开(公告)号：US06914272B2
公开(公告)日：2005-07-05
申请号：US10721440
申请日：2003-11-24
申请人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
发明人： Werner K. Goetz , Michael D. Camras , Changhua Chen , Gina L. Christenson , R. Scott Kern , Chihping Kuo , Paul Scott Martin , Daniel A. Steigerwald
IPC分类号： H01S5/30 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/323 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/0425 , H01S5/32341 , H01L2924/00
摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ωcm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.
摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。在第二实施例中，p型过渡层是任何III-V半导体。在第三实施例中，p型过渡层是超晶格。在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

10. 发明授权

US4912532A Electro-optical device with inverted transparent substrate and method for making same 失效
标题翻译：带反转透明基板的电光装置及其制造方法
公开(公告)号：US4912532A
公开(公告)日：1990-03-27
申请号：US237797
申请日：1988-08-26
申请人： Louis W. Cook , Michael D. Camras
发明人： Louis W. Cook , Michael D. Camras
IPC分类号： H01L21/208 , H01L33/00
CPC分类号： H01L33/0025 , H01L33/0062
摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodimens, the device is either temporarily removed from the LPE reactor or is transferred to another reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat-up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式