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1. 发明申请

US20160372639A1 INCANDESCENT-LIKE-DIMMING LIGHT EMITTING DIODE 审中-公开
标题翻译：类似人造灯的发光二极管
公开(公告)号：US20160372639A1
公开(公告)日：2016-12-22
申请号：US15254734
申请日：2016-09-01
申请人： Gerd O. MUELLER , Regina B. MUELLER-MACH
发明人： Gerd O. MUELLER , Regina B. MUELLER-MACH
IPC分类号： H01L33/50 , H05B33/08 , C09K11/62 , H01L33/32 , C09K11/77 , C09K11/61
CPC分类号： H01L33/504 , C09K11/617 , C09K11/62 , C09K11/7774 , H01L33/32 , H05B33/0857 , Y02B20/181
摘要： Phosphor-converted light emitting diodes comprising a blue or near-UV emitting semiconductor device, a yellow-green phosphor, and a red phosphor exhibit incandescent-like dimming behavior in that the Correlated Color Temperature of a white light output decreases with reduced brightness.
摘要翻译：包含蓝色或近紫外发射半导体器件，黄绿色荧光体和红色荧光体的荧光体转换发光二极管表现出白炽状调光行为，因为白光输出的相关色温随亮度降低而降低。

2. 发明授权

US09359260B2 Luminescent ceramic for a light emitting device 有权
标题翻译：用于发光器件的发光陶瓷
公开(公告)号：US09359260B2
公开(公告)日：2016-06-07
申请号：US12034588
申请日：2008-02-20
申请人： Gerd O. Mueller , Regina B. Mueller-Mach , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Arnold Kop
发明人： Gerd O. Mueller , Regina B. Mueller-Mach , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Arnold Kop
IPC分类号： H01L33/50 , C04B35/584 , C04B35/44 , C04B35/547 , C04B35/597 , C04B35/626 , C04B35/64 , C04B35/645 , C09K11/77 , H01L33/58 , H01L33/64
CPC分类号： H01L33/502 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/50 , H01L33/501 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/641 , H01L33/644 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00
摘要： A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
摘要翻译：包括设置在n型区域和p型区域之间的发光层的半导体发光器件与设置在由发光层发射的光的路径中的陶瓷层组合。陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。根据本发明的实施例的发光陶瓷层可以比现有技术的荧光体层更坚固并且对温度不太敏感。此外，发光陶瓷可能表现出更少的散射，因此可以提高现有技术荧光体层的转换效率。

3. 发明申请

US20110156056A1 WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：波长转换半导体发光器件
公开(公告)号：US20110156056A1
公开(公告)日：2011-06-30
申请号：US13045824
申请日：2011-03-11
申请人： Michael R. Krames , Gerd O. Mueller
发明人： Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/26 , H01L33/50 , H01L33/32
CPC分类号： H04L45/7453 , H01L33/0079 , H01L33/505 , H01L2224/16225 , H04L47/2441
摘要： A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.
摘要翻译：诸如磷光体的材料光学耦合到包括设置在n型区域和p型区域之间的发光区域的半导体结构，以有效地将来自发光区域的光提取到荧光体中。磷光体可以是与半导体结构的表面直接接触的荧光体颗粒，或者结合到半导体结构的陶瓷荧光体，或可以生长半导体结构的薄的成核结构。磷光体优选是高吸收性和高效率的。当半导体结构将光发射到这种高效，高吸收性的荧光体中时，磷光体可以有效地从结构中提取光，从而减少了现有技术装置中存在的光学损耗。

4. 发明授权

US07902564B2 Multi-grain luminescent ceramics for light emitting devices 失效
标题翻译：用于发光器件的多晶粒发光陶瓷
公开(公告)号：US07902564B2
公开(公告)日：2011-03-08
申请号：US11615372
申请日：2006-12-22
申请人： Regina B. Mueller-Mach , Gerd O. Mueller , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel
发明人： Regina B. Mueller-Mach , Gerd O. Mueller , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel
IPC分类号： H01L33/00
CPC分类号： H01L33/501 , C04B35/44 , C04B35/597 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/3409 , C04B2235/3418 , C04B2235/652 , C04B2235/658 , C04B2235/6582 , C04B2235/77 , C09K11/7774 , H01L33/382 , H01L2924/0002 , H01L2933/0091 , Y10S250/909 , H01L2924/00
摘要： A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light emitted by the light source and emit light of a different wavelength, and a plurality of second grains. For example, the first grains may be grains of luminescent material and the second grains may be grains of a luminescent material host matrix without activating dopant.
摘要翻译：陶瓷体设置在由光源发出的光的路径中。光源可以包括包括设置在n型区域和p型区域之间的发光区域的半导体结构。陶瓷体包括多个第一晶粒，其被配置为吸收由光源发射的光并发射不同波长的光，以及多个第二晶粒。例如，第一晶粒可以是发光材料的晶粒，并且第二晶粒可以是发光材料主基质的晶粒而不活化掺杂剂。

5. 发明授权

US07880186B2 III-nitride light emitting device with double heterostructure light emitting region 有权
标题翻译：具有双异质结构发光区域的III族氮化物发光器件
公开(公告)号：US07880186B2
公开(公告)日：2011-02-01
申请号：US11682276
申请日：2007-03-05
申请人： Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm−3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到6×10 18 cm -3和5×10 19 cm -3之间的掺杂剂浓度。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到小于6×10 18 cm -3的掺杂剂浓度。

6. 发明授权

US07858408B2 LED with phosphor tile and overmolded phosphor in lens 失效
标题翻译： LED与荧光砖和透镜中的包覆成型荧光粉
公开(公告)号：US07858408B2
公开(公告)日：2010-12-28
申请号：US11679143
申请日：2007-02-26
申请人： Gerd O. Mueller , Regina Mueller-Mach , Grigoriy Basin , Robert Scott West , Paul S. Martin , Tze-Sen Lim , Stefan Eberle
发明人： Gerd O. Mueller , Regina Mueller-Mach , Grigoriy Basin , Robert Scott West , Paul S. Martin , Tze-Sen Lim , Stefan Eberle
IPC分类号： H01L33/50 , H01L21/56
CPC分类号： H01L33/505 , B29C41/14 , B29C41/20 , B29C41/22 , B29K2995/0031 , B29L2011/00 , H01L24/97 , H01L25/167 , H01L33/504 , H01L33/54 , H01L33/56 , H01L2224/16225 , H01L2224/45139 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01055 , H01L2924/01058 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/15787 , H01L2924/181 , H01L2924/1815 , H01L2924/351 , H01L2933/0041 , H01L2924/00014 , H01L2224/81 , H01L2924/00 , H01L2924/01049 , H01L2924/00012
摘要： Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated from the wafer. The molded lens may include red phosphor to generate a warmer white light. In another embodiment, the phosphor plates are first temporarily mounted on a backplate, and a lens containing a red phosphor is molded over the phosphor plates. The plates with overmolded lenses are removed from the backplate and affixed to the top of an energizing LED. A clear lens is then molded over each LED structure. The shape of the molded phosphor-loaded lenses may be designed to improve the color vs. angle uniformity. Multiple dies may be encapsulated by a single lens. In another embodiment, a prefabricated collimating lens is glued to the flat top of an overmolded lens.
摘要翻译： LED结构描述了包覆成型透镜和某些制造技术。在一个实施例中，薄的YAG磷光体板被形成并固定在安装在底座晶片上的蓝色LED上。然后在单个模制过程中在每个LED结构上模制透明透镜。然后将LED从晶片分离。模制的透镜可以包括红色磷光体以产生较暖的白光。在另一个实施例中，荧光板首先临时安装在背板上，并且在荧光体板上模制含有红色荧光体的透镜。具有二次模制的透镜的板从背板上移除并固定到通电LED的顶部。然后在每个LED结构上模制透明透镜。模制的含磷光体的透镜的形状可以被设计成改善颜色与角度均匀性。多个管芯可以由单个透镜封装。在另一个实施例中，将预制的准直透镜胶合到包覆成型透镜的平坦顶部。

7. 发明授权

US07671529B2 Phosphor converted light emitting device 有权
标题翻译：荧光转换发光器件
公开(公告)号：US07671529B2
公开(公告)日：2010-03-02
申请号：US11008863
申请日：2004-12-10
申请人： Gerd O. Mueller , Regina B. Mueller-Mach , Joerg Meyer , Peter J. Schmidt , Detlef Uwe Wiechert
发明人： Gerd O. Mueller , Regina B. Mueller-Mach , Joerg Meyer , Peter J. Schmidt , Detlef Uwe Wiechert
IPC分类号： C09K11/08
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device is combined with a wavelength converting material. The semiconductor light emitting device is configured to emit first light of a first peak wavelength. The wavelength converting material is configured to absorb at least a portion of the first light and emit second light of a second peak wavelength. In some embodiments, the first wavelength converting material is (Ba1-xSrx)2-y-0.5zSi5N8-zOz:Euy2+ where 0.2
摘要翻译：半导体发光器件与波长转换材料组合。半导体发光器件被配置为发射第一峰值波长的第一光。波长转换材料被配置为吸收第一光的至少一部分并发射第二峰值波长的第二光。在一些实施例中，第一波长转换材料是（Ba1-xSrx）2-y-0.5zSi5N8-zOz：Euy2 +，其中0.2

8. 发明授权

US07402840B2 Selective filtering of wavelength-converted semiconductor light emitting devices 失效
标题翻译：波长转换半导体发光器件的选择滤波
公开(公告)号：US07402840B2
公开(公告)日：2008-07-22
申请号：US11400057
申请日：2006-04-07
申请人： Michael R. Krames , Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Michael R. Krames , Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/50 , H01L2224/14
摘要： A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
摘要翻译：一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。发光层发射第一峰值波长的第一光。吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

9. 发明申请

US20080149956A1 Multi-Grain Luminescent Ceramics for Light Emitting Devices 失效
标题翻译：用于发光器件的多晶硅发光陶瓷
公开(公告)号：US20080149956A1
公开(公告)日：2008-06-26
申请号：US11615372
申请日：2006-12-22
申请人： Regina B. Mueller-Mach , Gerd O. Mueller , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel
发明人： Regina B. Mueller-Mach , Gerd O. Mueller , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel
IPC分类号： H01L33/00
CPC分类号： H01L33/501 , C04B35/44 , C04B35/597 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/3409 , C04B2235/3418 , C04B2235/652 , C04B2235/658 , C04B2235/6582 , C04B2235/77 , C09K11/7774 , H01L33/382 , H01L2924/0002 , H01L2933/0091 , Y10S250/909 , H01L2924/00
摘要： A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light emitted by the light source and emit light of a different wavelength, and a plurality of second grains. For example, the first grains may be grains of luminescent material and the second grains may be grains of a luminescent material host matrix without activating dopant.
摘要翻译：陶瓷体设置在由光源发出的光的路径中。光源可以包括包括设置在n型区域和p型区域之间的发光区域的半导体结构。陶瓷体包括多个第一晶粒，其被配置为吸收由光源发射的光并发射不同波长的光，以及多个第二晶粒。例如，第一晶粒可以是发光材料的晶粒，并且第二晶粒可以是发光材料主基质的晶粒而不活化掺杂剂。

10. 发明授权

US07279345B2 Method of forming light emitting devices with improved light extraction efficiency 有权
标题翻译：形成具有改进的光提取效率的发光器件的方法
公开(公告)号：US07279345B2
公开(公告)日：2007-10-09
申请号：US10938237
申请日：2004-09-10
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
IPC分类号： H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.
摘要翻译：提供了一种将透明光学元件结合到具有包括包括有源区域的半导体层的层叠层的发光器件的方法。该方法包括升高光学元件和叠层的温度并施加压力以将光学元件和叠层压在一起。在一个实施例中，该方法还包括在叠层和光学元件之间设置透明粘结材料层。接合方法可以应用于预制光学元件或稍后形成或成形为诸如透镜或聚光器的光学元件的光学元件材料块。

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