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    • 10. 发明授权
    • Electro-optical device with inverted transparent substrate and method
for making same
    • 带反转透明基板的电光装置及其制造方法
    • US5115286A
    • 1992-05-19
    • US663056
    • 1991-02-27
    • Michael D. CamrasLouis W. CookVirginia M. Robbins
    • Michael D. CamrasLouis W. CookVirginia M. Robbins
    • H01L33/00
    • H01L33/0025H01L33/0062
    • An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.
    • 通过外延地生长有源器件层,然后在不透明晶片上生长透明衬底层,制造具有透明衬底的电光器件。 随后去除不透明晶片。 有源器件层具有足够低的扩散性的掺杂剂,使得它们的电子特性在透明衬底层的生长过程中长时间暴露于高温下不会受到不利影响。 在液相外延(LPE)方法中,使用重复的温度循环技术,其中每次冷却后温度重复升高,以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。 在生长和温度升温期之间,装置储存在LPE反应器内。 当外延层可氧化时,在生长之间和在升温期间暂时在其上生长不可氧化的盖。 随后在下一层生长之前在升高的温度下将盖除去。 该技术还可用于生长与活性活性层晶格失配的透明衬底。