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    • 8. 发明授权
    • Chirped multi-well active region LED
    • 啁啾多功能区LED
    • US06504171B1
    • 2003-01-07
    • US09490777
    • 2000-01-24
    • Patrick N. GrillotChristopher P. KocotMichael R. KramesEugene I. ChenStephen A. StockmanYing-Lan ChangRobert C. Taber
    • Patrick N. GrillotChristopher P. KocotMichael R. KramesEugene I. ChenStephen A. StockmanYing-Lan ChangRobert C. Taber
    • H01L2906
    • H01L33/30B82Y20/00H01L33/06H01L33/32
    • A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.
    • 发光器件和增加器件的光输出的方法利用啁啾多阱有源区,通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率 在有源区域的发光有源层(即,跨过有源区域)的分布曲线。 啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应,从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布 活性区内的组成。 因此,多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率,这导致器件的光输出增加。 器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。 发光器件可以是III-V材料LED,II-VI材料LED,聚合物或有机LED,激光二极管或光放大器。