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    • 1. 发明申请
    • CHEMICAL MECHANICAL PLANARIZATION OF LOW DIELECTRIC CONSTANT MATERIALS
    • 低介电常数材料的化学机械平面化
    • WO2003098680A1
    • 2003-11-27
    • PCT/US2003/015224
    • 2003-05-13
    • HONEYWELL INTERNATIONAL INC.ZHANG, FanTOWERY, DanielLIU, Feng Quan
    • ZHANG, FanTOWERY, DanielLIU, Feng Quan
    • H01L21/461
    • C09K3/1472C09G1/02C09K3/1436C09K3/1463H01L21/31053H01L21/31058
    • The present invention relates to apparatus, procedures, and compositions for avoiding and reducing damage to low dielectric constant materials and other soft materials, such as Cu and Al, used in fabricating semiconductor devices. Damage reduction can be achieved by decreasing the role of mechanical abrasion in the CMP of these materials and increasing the role of chemical polishing, which can improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, (5) which contains components that interact chemically with the surface (1) to be polished. This slurry (5) may or may not also contain soft abrasive particles, which replace the hard abrasive particles of conventional slurries. Use of soft abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry (5) in CMP can reduce surface scratches and device damage.
    • 本发明涉及用于避免和减少用于制造半导体器件的低介电常数材料和其它软材料(例如Cu和Al)的损伤的装置,程序和组合物。 通过减少这些材料的CMP中的机械磨损的作用并增加化学抛光的作用可以减少损伤,这可以提高材料去除率。 增加化学抛光的作用可以通过产生抛光浆料(5)来实现,该抛光浆料包含与要抛光的表面(1)化学反应的成分。 该浆料(5)可以含有也可以不含有软磨料颗粒,其代替常规浆料的硬磨料颗粒。 使用软磨粒可以减少CMP工艺中机械磨损的作用。 在CMP中使用这种浆料(5)可以减少表面划痕和器件损坏。