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1. 发明授权

US07964882B2 Nitride semiconductor-based light emitting devices 失效
标题翻译：氮化物半导体基发光器件
公开(公告)号：US07964882B2
公开(公告)日：2011-06-21
申请号：US12446513
申请日：2007-10-02
申请人： Kyu Seok Lee , Sung Bum Bae
发明人： Kyu Seok Lee , Sung Bum Bae
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/18 , H01L33/32
摘要： A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron diffusion layer, a second n-type contact layer and a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device.
摘要翻译：提供了一种基于氮化物半导体的发光器件。基于氮化物半导体的发光器件由具有Ga面的纤锌矿晶格结构的氮化物半导体形成。该器件具有衬底，缓冲层，第一p型接触层，第二p型接触层，第一孔扩散层，第二孔扩散层，发光有源区，第二电子扩散层，第一电子扩散层，第二n型接触层和第一n型接触层。这种结构可以由于自发极化和在具有Ga面的纤锌矿晶格结构中的压电极化而在异质界面处形成的准二维自由电子和自由空穴气体，从而提高了发射均匀性和发射效率发光装置。

2. 发明授权

US6055087A Photo-induced electro-optic oscillator using a multiple quantum well pin diode 失效
标题翻译：使用多量子阱针二极管的光感应电光振荡器
公开(公告)号：US6055087A
公开(公告)日：2000-04-25
申请号：US118958
申请日：1998-07-17
申请人： O Kyun Kwon , Kyu Seok Lee , Hye Yong Chu
发明人： O Kyun Kwon , Kyu Seok Lee , Hye Yong Chu
IPC分类号： H01L51/00 , G02F1/015 , G02F3/02 , H01L31/10 , H01S3/10
CPC分类号： G02F3/028 , G02F1/015
摘要： A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high output by using the multiple quantum well structure having the electro-absorption as the intrinsic layer of the PIN diode, regulate the electrical AC signal frequency and signal amplitude by means of regulating the PIN diode and electrical elements, regulate the modulated optical signal frequency and the modulated signal difference and extinction ratio by means of regulating the multiple quantum well structure, as a result, to generate the electrical and optical signal of a high output, high frequency.
摘要翻译：公开了一种使用具有光电流电压的负电阻特性的多量子阱结构PIN二极管的光感应电光振荡器。本发明可以通过使用具有电吸收的多量子阱结构作为PIN二极管的本征层来产生高输出的调制光信号以及高交流信号，调节电AC信号频率和信号幅度通过调节PIN二极管和电气元件，通过调节多重量子阱结构来调节调制光信号频率和调制信号差和消光比，从而产生高输出的电光信号，高频。

3. 发明授权

US5497393A Semiconductor laser with super structure grating distributed Bragg reflector 失效
标题翻译：半导体激光器与超结构光栅分布布拉格反射器
公开(公告)号：US5497393A
公开(公告)日：1996-03-05
申请号：US359186
申请日：1994-12-19
申请人： Kyu-Seok Lee
发明人： Kyu-Seok Lee
IPC分类号： H01S5/00 , H01S3/10 , H01S5/06 , H01S5/0625 , H01S5/065 , H01S5/12 , H01S5/125
CPC分类号： H01S5/065 , H01S5/125 , H01S5/0601 , H01S5/06256 , H01S5/1218
摘要： Disclosed is a semiconductor laser with a super structure grating DBR capable of generating a pulse train of from several hundred giga Hz to several tera Hz, comprising a saturable absorber section, a gain section, a phase control section and an super structure grating distributed Bragg reflector section, the Bragg reflector section having at least five sampling periods, each of the sampling periods having grating pitches of 233.5 nm, 235 nm, 236.5 nm, 238 nm and 239.5 nm, and said grating pitches being arranged corresponding to wavelengths of 5837.5 nm, 1175 nm, 5912.5 nm, 1195 nm and 5987.5 nm, respectively.
摘要翻译：公开了一种具有超结构光栅DBR的半导体激光器，其能够产生几百赫兹到几赫兹的脉冲串，包括可饱和吸收器部分，增益部分，相位控制部分和超结构光栅分布布拉格反射器布拉格反射器部分具有至少五个采样周期，每个采样周期具有233.5nm，235nm，236.5nm，238nm和239.5nm的光栅间距，并且所述光栅间距对应于5837.5nm的波长布置， 1175nm，5912.5nm，1195nm和5987.5nm。

4. 发明申请

US20100187494A1 NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICES 失效
标题翻译：基于氮化物半导体的发光器件
公开(公告)号：US20100187494A1
公开(公告)日：2010-07-29
申请号：US12446513
申请日：2007-10-02
申请人： Kyu Seok Lee , Sung Bum Bae
发明人： Kyu Seok Lee , Sung Bum Bae
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/18 , H01L33/32
摘要： A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device.
摘要翻译：提供了一种基于氮化物半导体的发光器件。基于氮化物半导体的发光器件由具有Ga面的纤锌矿晶格结构的氮化物半导体形成。该器件具有衬底，缓冲层，第一p型接触层，第二p型接触层，第一孔扩散层，第二孔扩散层，发光有源区，第二电子扩散层，第一电子，第一n型接触层，其顺序堆叠。这种结构可以由于自发极化和在具有Ga面的纤锌矿晶格结构中的压电极化而在异质界面处形成的准二维自由电子和自由空穴气体，从而提高了发射均匀性和发射效率发光装置。

5. 发明申请

US20110017289A1 CIGS SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译： CIGS太阳能电池及其制造方法
公开(公告)号：US20110017289A1
公开(公告)日：2011-01-27
申请号：US12769756
申请日：2010-04-29
申请人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
发明人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0236 , H01L31/0322 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.
摘要翻译：提供CIGS太阳能电池和制造CIGS太阳能电池的方法。在该方法中，形成暴露突起的缓冲层。然后，形成具有与缓冲层的突起一致的不平坦表面的窗口电极层。因此，为了降低入射的太阳光的表面反射率和提高太阳能电池的效率，不需要用于使窗口电极层的上表面粗糙化的附加工艺，从而可以提高生产率。

6. 发明授权

US06864510B2 Nitride semiconductor field effect transistor (FET) and method of fabricating the same 有权
标题翻译：氮化物半导体场效应晶体管（FET）及其制造方法
公开(公告)号：US06864510B2
公开(公告)日：2005-03-08
申请号：US10683328
申请日：2003-10-09
申请人： Doo Hyeb Youn , Kyu Seok Lee
发明人： Doo Hyeb Youn , Kyu Seok Lee
IPC分类号： H01L29/20 , H01L29/45 , H01L29/778 , H01L31/0256
CPC分类号： H01L29/452 , H01L29/2003 , H01L29/7787
摘要： Provided are a nitride semiconductor field effect transistor (FET) and a method of fabricating the nitride semiconductor FET. The nitride semiconductor FET includes a first semiconductor layer, a second semiconductor layer, a two-dimensional electron gas layer, a T-shaped gate, and a source/drain ohmic electrode. The first semiconductor layer is formed on a substrate. The second semiconductor layer is formed on the first semiconductor layer and has a bandgap energy that is different from the bandgap energy of the first semiconductor layer. The two-dimensional electron gas layer is formed of a hetero-junction of the first semiconductor layer and the second semiconductor layer in an interfacial area between the first semiconductor layer and the second semiconductor layer. The T-shaped gate is formed on the second semiconductor layer and is connected to the second semiconductor layer. The source/drain ohmic electrode is formed by sequentially forming an Ni (or Cr) layer, an In layer, an Mo (or W) layer, and an Au layer at both sides of the second semiconductor layer and on the first semiconductor layer.
摘要翻译：提供了氮化物半导体场效应晶体管（FET）和制造氮化物半导体FET的方法。氮化物半导体FET包括第一半导体层，第二半导体层，二维电子气体层，T形栅极和源极/漏极欧姆电极。第一半导体层形成在基板上。第二半导体层形成在第一半导体层上，并且具有与第一半导体层的带隙能不同的带隙能。所述二维电子气体层由所述第一半导体层和所述第二半导体层的异质结在所述第一半导体层与所述第二半导体层之间的界面区域中形成。 T形栅极形成在第二半导体层上并连接到第二半导体层。源极/漏极欧姆电极通过在第二半导体层的两侧和第一半导体层上依次形成Ni（或Cr）层，In层，Mo（或W）层和Au层而形成。

7. 发明授权

US5822355A Dual cavity laser 失效
标题翻译：双腔激光器
公开(公告)号：US5822355A
公开(公告)日：1998-10-13
申请号：US708498
申请日：1996-09-05
申请人： Joon-Tae Ahn , Kyu-Seok Lee , El-Hang Lee
发明人： Joon-Tae Ahn , Kyu-Seok Lee , El-Hang Lee
IPC分类号： H01S3/08 , H01S3/082 , H01S3/098 , H01S3/23
CPC分类号： H01S3/1109 , H01S3/082 , H01S3/1121
摘要： A dual cavity laser having a positively mode-locked structure capable of double increasing the repetition rate of output light. The dual cavity laser includes an amplitude modulator to simultaneously generate two modulating signals with opposite phases. The dual cavity laser has a simply modified structure from that of the conventional single cavity laser to have two resonators, so that it can have a repetition rate corresponding to two times that of the single cavity laser. One of the resonators may have an adjusted optical property so as to obtain two kinds of output optical pulses with different optical properties.
摘要翻译：具有能够双倍增加输出光的重复率的正锁模结构的双腔激光器。双腔激光器包括幅度调制器，以同时产生具有相反相位的两个调制信号。双腔激光器具有与传统单腔激光器相似的结构，具有两个谐振器，从而可以具有对应于单腔激光器的两倍的重复率。谐振器中的一个可以具有调整的光学特性，以便获得具有不同光学特性的两种输出光脉冲。

8. 发明授权

US5790579A Semiconductor laser device for pulse laser oscillation 失效
标题翻译：用于脉冲激光振荡的半导体激光器件
公开(公告)号：US5790579A
公开(公告)日：1998-08-04
申请号：US708686
申请日：1996-09-05
申请人： Kyu-Seok Lee , Joon-Tae Ahn , El-Hang Lee
发明人： Kyu-Seok Lee , Joon-Tae Ahn , El-Hang Lee
IPC分类号： H01S3/098 , H01S5/06 , H01S5/0625 , H01S5/065 , H01S5/12 , H01S5/125 , H01S5/34 , H01S3/10
CPC分类号： B82Y20/00 , H01S5/0625 , H01S5/125 , H01S5/34 , H01S3/1118 , H01S5/0601 , H01S5/0615 , H01S5/06256 , H01S5/0657 , H01S5/0658 , H01S5/1218 , H01S5/3408
摘要： A pulsed semiconductor laser has a lower threshold current and a more stable pulse train. The structure includes a saturable absorber section has a quantum well structure for laser oscillation, a gain section, a phase control section, and a super structure grating-distributed Bragg reflector section. It uses an improved construction for overcoming problems of conventional pulsed semiconductor lasers. The improved structure includes five quantum well layers having thicknesses with respective spontaneous emission peak wavelengths of ".lambda.-2.delta.", ".lambda.+.delta.", ".lambda.+2.delta.", ".lambda.", ".lambda.-.delta." at room temperature from their upper section. .lambda. denotes the mean wavelength of the oscillating pulse laser, and .delta. denotes a fixed value less than 12 nm. The super structure grating-distributed Bragg reflector section has five sampling sections, with each section having five kinds of different pitches arranged in order of thicknesses of 25 cycles, 5 cycles, 25 cycles, 5 cycles, and 25 cycles.
摘要翻译：脉冲半导体激光器具有较低的阈值电流和更稳定的脉冲串。该结构包括具有用于激光振荡的量子阱结构的可饱和吸收部分，增益部分，相位控制部分和超结构光栅分布布拉格反射器部分。它采用改进的结构来克服常规脉冲半导体激光器的问题。改进的结构包括五个量子阱层，其具有在室温下具有相应的自发发射峰波长为“λ-2δ”，“λ+δ”，“λ+2δ”，“λ”，“λ-δ” 他们的上部。 λ表示振荡脉冲激光的平均波长，delta表示小于12nm的固定值。超结构光栅分布布拉格反射器部分具有五个采样部分，每个部分具有按照25个周期，5个周期，25个周期，5个周期和25个周期的顺序排列的五种不同的间距。

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