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    • 2. 发明授权
    • Semiconductor laser device for pulse laser oscillation
    • 用于脉冲激光振荡的半导体激光器件
    • US5790579A
    • 1998-08-04
    • US708686
    • 1996-09-05
    • Kyu-Seok LeeJoon-Tae AhnEl-Hang Lee
    • Kyu-Seok LeeJoon-Tae AhnEl-Hang Lee
    • H01S3/098H01S5/06H01S5/0625H01S5/065H01S5/12H01S5/125H01S5/34H01S3/10
    • B82Y20/00H01S5/0625H01S5/125H01S5/34H01S3/1118H01S5/0601H01S5/0615H01S5/06256H01S5/0657H01S5/0658H01S5/1218H01S5/3408
    • A pulsed semiconductor laser has a lower threshold current and a more stable pulse train. The structure includes a saturable absorber section has a quantum well structure for laser oscillation, a gain section, a phase control section, and a super structure grating-distributed Bragg reflector section. It uses an improved construction for overcoming problems of conventional pulsed semiconductor lasers. The improved structure includes five quantum well layers having thicknesses with respective spontaneous emission peak wavelengths of ".lambda.-2.delta.", ".lambda.+.delta.", ".lambda.+2.delta.", ".lambda.", ".lambda.-.delta." at room temperature from their upper section. .lambda. denotes the mean wavelength of the oscillating pulse laser, and .delta. denotes a fixed value less than 12 nm. The super structure grating-distributed Bragg reflector section has five sampling sections, with each section having five kinds of different pitches arranged in order of thicknesses of 25 cycles, 5 cycles, 25 cycles, 5 cycles, and 25 cycles.
    • 脉冲半导体激光器具有较低的阈值电流和更稳定的脉冲串。 该结构包括具有用于激光振荡的量子阱结构的可饱和吸收部分,增益部分,相位控制部分和超结构光栅分布布拉格反射器部分。 它采用改进的结构来克服常规脉冲半导体激光器的问题。 改进的结构包括五个量子阱层,其具有在室温下具有相应的自发发射峰波长为“λ-2δ”,“λ+δ”,“λ+2δ”,“λ”,“λ-δ” 他们的上部。 λ表示振荡脉冲激光的平均波长,delta表示小于12nm的固定值。 超结构光栅分布布拉格反射器部分具有五个采样部分,每个部分具有按照25个周期,5个周期,25个周期,5个周期和25个周期的顺序排列的五种不同的间距。