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1. 发明授权

US5822355A Dual cavity laser 失效
标题翻译：双腔激光器
公开(公告)号：US5822355A
公开(公告)日：1998-10-13
申请号：US708498
申请日：1996-09-05
申请人： Joon-Tae Ahn , Kyu-Seok Lee , El-Hang Lee
发明人： Joon-Tae Ahn , Kyu-Seok Lee , El-Hang Lee
IPC分类号： H01S3/08 , H01S3/082 , H01S3/098 , H01S3/23
CPC分类号： H01S3/1109 , H01S3/082 , H01S3/1121
摘要： A dual cavity laser having a positively mode-locked structure capable of double increasing the repetition rate of output light. The dual cavity laser includes an amplitude modulator to simultaneously generate two modulating signals with opposite phases. The dual cavity laser has a simply modified structure from that of the conventional single cavity laser to have two resonators, so that it can have a repetition rate corresponding to two times that of the single cavity laser. One of the resonators may have an adjusted optical property so as to obtain two kinds of output optical pulses with different optical properties.
摘要翻译：具有能够双倍增加输出光的重复率的正锁模结构的双腔激光器。双腔激光器包括幅度调制器，以同时产生具有相反相位的两个调制信号。双腔激光器具有与传统单腔激光器相似的结构，具有两个谐振器，从而可以具有对应于单腔激光器的两倍的重复率。谐振器中的一个可以具有调整的光学特性，以便获得具有不同光学特性的两种输出光脉冲。

2. 发明授权

US5790579A Semiconductor laser device for pulse laser oscillation 失效
标题翻译：用于脉冲激光振荡的半导体激光器件
公开(公告)号：US5790579A
公开(公告)日：1998-08-04
申请号：US708686
申请日：1996-09-05
申请人： Kyu-Seok Lee , Joon-Tae Ahn , El-Hang Lee
发明人： Kyu-Seok Lee , Joon-Tae Ahn , El-Hang Lee
IPC分类号： H01S3/098 , H01S5/06 , H01S5/0625 , H01S5/065 , H01S5/12 , H01S5/125 , H01S5/34 , H01S3/10
CPC分类号： B82Y20/00 , H01S5/0625 , H01S5/125 , H01S5/34 , H01S3/1118 , H01S5/0601 , H01S5/0615 , H01S5/06256 , H01S5/0657 , H01S5/0658 , H01S5/1218 , H01S5/3408
摘要： A pulsed semiconductor laser has a lower threshold current and a more stable pulse train. The structure includes a saturable absorber section has a quantum well structure for laser oscillation, a gain section, a phase control section, and a super structure grating-distributed Bragg reflector section. It uses an improved construction for overcoming problems of conventional pulsed semiconductor lasers. The improved structure includes five quantum well layers having thicknesses with respective spontaneous emission peak wavelengths of ".lambda.-2.delta.", ".lambda.+.delta.", ".lambda.+2.delta.", ".lambda.", ".lambda.-.delta." at room temperature from their upper section. .lambda. denotes the mean wavelength of the oscillating pulse laser, and .delta. denotes a fixed value less than 12 nm. The super structure grating-distributed Bragg reflector section has five sampling sections, with each section having five kinds of different pitches arranged in order of thicknesses of 25 cycles, 5 cycles, 25 cycles, 5 cycles, and 25 cycles.
摘要翻译：脉冲半导体激光器具有较低的阈值电流和更稳定的脉冲串。该结构包括具有用于激光振荡的量子阱结构的可饱和吸收部分，增益部分，相位控制部分和超结构光栅分布布拉格反射器部分。它采用改进的结构来克服常规脉冲半导体激光器的问题。改进的结构包括五个量子阱层，其具有在室温下具有相应的自发发射峰波长为“λ-2δ”，“λ+δ”，“λ+2δ”，“λ”，“λ-δ” 他们的上部。 λ表示振荡脉冲激光的平均波长，delta表示小于12nm的固定值。超结构光栅分布布拉格反射器部分具有五个采样部分，每个部分具有按照25个周期，5个周期，25个周期，5个周期和25个周期的顺序排列的五种不同的间距。

3. 发明授权

US5497393A Semiconductor laser with super structure grating distributed Bragg reflector 失效
标题翻译：半导体激光器与超结构光栅分布布拉格反射器
公开(公告)号：US5497393A
公开(公告)日：1996-03-05
申请号：US359186
申请日：1994-12-19
申请人： Kyu-Seok Lee
发明人： Kyu-Seok Lee
IPC分类号： H01S5/00 , H01S3/10 , H01S5/06 , H01S5/0625 , H01S5/065 , H01S5/12 , H01S5/125
CPC分类号： H01S5/065 , H01S5/125 , H01S5/0601 , H01S5/06256 , H01S5/1218
摘要： Disclosed is a semiconductor laser with a super structure grating DBR capable of generating a pulse train of from several hundred giga Hz to several tera Hz, comprising a saturable absorber section, a gain section, a phase control section and an super structure grating distributed Bragg reflector section, the Bragg reflector section having at least five sampling periods, each of the sampling periods having grating pitches of 233.5 nm, 235 nm, 236.5 nm, 238 nm and 239.5 nm, and said grating pitches being arranged corresponding to wavelengths of 5837.5 nm, 1175 nm, 5912.5 nm, 1195 nm and 5987.5 nm, respectively.
摘要翻译：公开了一种具有超结构光栅DBR的半导体激光器，其能够产生几百赫兹到几赫兹的脉冲串，包括可饱和吸收器部分，增益部分，相位控制部分和超结构光栅分布布拉格反射器布拉格反射器部分具有至少五个采样周期，每个采样周期具有233.5nm，235nm，236.5nm，238nm和239.5nm的光栅间距，并且所述光栅间距对应于5837.5nm的波长布置， 1175nm，5912.5nm，1195nm和5987.5nm。

4. 发明申请

US20110017289A1 CIGS SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译： CIGS太阳能电池及其制造方法
公开(公告)号：US20110017289A1
公开(公告)日：2011-01-27
申请号：US12769756
申请日：2010-04-29
申请人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
发明人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0236 , H01L31/0322 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.
摘要翻译：提供CIGS太阳能电池和制造CIGS太阳能电池的方法。在该方法中，形成暴露突起的缓冲层。然后，形成具有与缓冲层的突起一致的不平坦表面的窗口电极层。因此，为了降低入射的太阳光的表面反射率和提高太阳能电池的效率，不需要用于使窗口电极层的上表面粗糙化的附加工艺，从而可以提高生产率。

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