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1. 发明授权

US08647916B2 Method for manufacturing solar cell using a single target 有权
标题翻译：使用单个目标制造太阳能电池的方法
公开(公告)号：US08647916B2
公开(公告)日：2014-02-11
申请号：US13530370
申请日：2012-06-22
申请人： Kyung Hyun Kim , Je Ha Kim , Hae-won Choi , Dae-Hyung Cho , Yong-Duck Chung
发明人： Kyung Hyun Kim , Je Ha Kim , Hae-won Choi , Dae-Hyung Cho , Yong-Duck Chung
IPC分类号： H01L21/00
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may include an intrinsic layer and the transparent electrode which have electric characteristics different from each other, respectively. The intrinsic layer and the transparent electrode may be formed by a sputtering process using a single target formed of metal oxide doped with impurities.
摘要翻译：提供太阳能电池的制造方法。该方法可以包括在基板上形成下电极，在下电极上形成光吸收层，在光吸收层上形成缓冲层，在缓冲层上形成窗口层。窗口层可以分别包括具有彼此不同的电特性的本征层和透明电极。本征层和透明电极可以通过使用由掺杂有杂质的金属氧化物形成的单个靶的溅射工艺形成。

2. 发明申请

US20120125425A1 COMPOUND SEMICONDUCTOR SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：化合物半导体太阳能电池及其制造方法
公开(公告)号：US20120125425A1
公开(公告)日：2012-05-24
申请号：US13191820
申请日：2011-07-27
申请人： Dae-Hyung Cho , Yong-Duck Chung
发明人： Dae-Hyung Cho , Yong-Duck Chung
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/03923 , H01L31/022466 , H01L31/022483 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Provided is a compound semiconductor solar cell. The compound semiconductor solar cell includes: an impurity diffusion preventing layer disposed on a substrate, added with an alkali component, and formed of a metal layer of one of Cr, Co, or Cu; a rear electrode disposed on the impurity diffusion preventing layer and formed of Mo; a CIGS based light absorbing layer disposed on the rear electrode; and a front transparent electrode disposed on the light absorbing layer.
摘要翻译：提供了一种化合物半导体太阳能电池。化合物半导体太阳能电池包括：杂质扩散防止层，其设置在基板上，添加碱成分，由Cr，Co或Cu之一的金属层形成; 设置在所述杂质扩散防止层上并由Mo形成的背面电极; 设置在后电极上的基于CIGS的光吸收层; 以及设置在光吸收层上的前透明电极。

3. 发明申请

US20100319777A1 SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100319777A1
公开(公告)日：2010-12-23
申请号：US12604450
申请日：2009-10-23
申请人： Sung-Bum BAE , Yong-Duck Chung , Won Seok Han , Dae-Hyung Cho , Je Ha Kim
发明人： Sung-Bum BAE , Yong-Duck Chung , Won Seok Han , Dae-Hyung Cho , Je Ha Kim
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/072 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (InxGa1-xN). The transparent electrode layer is disposed on the buffer layer.
摘要翻译：提供了一种太阳能电池及其制造方法。太阳能电池包括金属电极层，光吸收层，缓冲层和透明电极层。金属电极层设置在基板上。光吸收层设置在金属电极层上。缓冲层设置在光吸收层上并包括氮化铟镓（In x Ga 1-x N）。透明电极层设置在缓冲层上。

4. 发明申请

US20130095600A1 METHOD FOR MANUFACTURING SOLAR CELL 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20130095600A1
公开(公告)日：2013-04-18
申请号：US13530370
申请日：2012-06-22
申请人： Kyung Hyun KIM , Je Ha KIM , Hae-won CHOI , Dae-Hyung CHO , Yong-Duck CHUNG
发明人： Kyung Hyun KIM , Je Ha KIM , Hae-won CHOI , Dae-Hyung CHO , Yong-Duck CHUNG
IPC分类号： H01L31/075 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may include an intrinsic layer and the transparent electrode which have electric characteristics different from each other, respectively. The intrinsic layer and the transparent electrode may be formed by a sputtering process using a single target formed of metal oxide doped with impurities.
摘要翻译：提供太阳能电池的制造方法。该方法可以包括在基板上形成下电极，在下电极上形成光吸收层，在光吸收层上形成缓冲层，在缓冲层上形成窗口层。窗口层可以分别包括具有彼此不同的电特性的本征层和透明电极。本征层和透明电极可以通过使用由掺杂有杂质的金属氧化物形成的单个靶的溅射工艺形成。

5. 发明申请

US20120138129A1 BIFACIAL SOLAR CELL 审中-公开
标题翻译：双极太阳能电池
公开(公告)号：US20120138129A1
公开(公告)日：2012-06-07
申请号：US13205664
申请日：2011-08-09
申请人： Kyung Hyun KIM , Dae-Hyung CHO
发明人： Kyung Hyun KIM , Dae-Hyung CHO
IPC分类号： H01L31/06
CPC分类号： H01L31/0682 , Y02E10/547
摘要： Provided is a bifacial solar cell. The bifacial solar cell includes: a transparent substrate having a first side and a second side facing each other; a first transparent electrode disposed on the first side of the transparent substrate; a first light absorbing layer disposed on the first transparent electrode and exposing the first transparent electrode at one edge; a second transparent electrode disposed on the first light absorbing layer; a first metal electrode pad disposed on the exposed first transparent electrode; a third transparent electrode disposed below the second side of the transparent substrate; a second light absorbing layer disposed below the third transparent electrode and exposing the third transparent electrode in correspondence to the exposed first transparent electrode; a fourth transparent electrode disposed below the second light absorbing layer; and a second metal electrode pad disposed below the exposed third transparent electrode.
摘要翻译：提供了一个双面太阳能电池。双面太阳能电池包括：具有第一面和第二面的透明基板; 设置在所述透明基板的第一面上的第一透明电极; 第一光吸收层，设置在所述第一透明电极上并且在一个边缘处暴露所述第一透明电极; 设置在第一光吸收层上的第二透明电极; 设置在所述暴露的第一透明电极上的第一金属电极焊盘; 设置在所述透明基板的第二侧下方的第三透明电极; 第二光吸收层，设置在所述第三透明电极的下方，并与所述第一透明电极对应地暴露所述第三透明电极; 设置在所述第二光吸收层下方的第四透明电极; 以及设置在所述暴露的第三透明电极下方的第二金属电极焊盘。

6. 发明申请

US20080215774A1 Wireless Universal Serial Bus Dual Role Device 审中-公开
标题翻译：无线通用串行总线双重角色设备
公开(公告)号：US20080215774A1
公开(公告)日：2008-09-04
申请号：US12019265
申请日：2008-01-24
申请人： Hae Jin Kim , Sung Ho Cho , Dae Hyung Cho
发明人： Hae Jin Kim , Sung Ho Cho , Dae Hyung Cho
IPC分类号： G06F13/12
CPC分类号： G06F13/128
摘要： Disclosed herein is a wireless universal serial bus (USB) dual role device (DRD) system in which a common part shared between a wireless USB host and a wireless USB device is extracted from a central processing unit (CPU) to implement a wireless USB DRD, and driven to be divisionally processed in the CPU according to roles to reduce system load, so that a DRD performance can be improved.
摘要翻译：本文公开了一种无线通用串行总线（USB）双重角色设备（DRD）系统，其中从中央处理单元（CPU）提取在无线USB主机和无线USB设备之间共享的公共部分，以实现无线USB DRD 并根据角色驱动在CPU中进行分案处理，以减少系统负载，从而可以提高DRD性能。

7. 发明授权

US5889308A Semiconductor device having an electrostatic discharging protection circuit using a non-ohmic material 失效
标题翻译：具有使用非欧姆材料的静电放电保护电路的半导体器件
公开(公告)号：US5889308A
公开(公告)日：1999-03-30
申请号：US907854
申请日：1997-08-08
申请人： Ki Won Hong , Nam Ho Kim , Dae Hyung Cho
发明人： Ki Won Hong , Nam Ho Kim , Dae Hyung Cho
IPC分类号： H01L27/04 , H01L21/822 , H01L23/50 , H01L23/60 , H01L23/64 , H01L27/02 , H01L23/62
CPC分类号： H01L27/0248 , H01L23/60 , H01L23/647 , H01L2224/48091 , H01L2224/48247 , H01L2224/4911 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01021 , H01L2924/01078 , H01L2924/01079 , H01L2924/12035 , H01L2924/14 , H01L2924/181 , H01L2924/19107
摘要： Disclosed is a semiconductor device capable of protecting an internal circuit from an ESD impact, damage and a mistaken working caused by an electrostatic discharge, a surge pulse and a noise, and more particularly to a semiconductor device capable of protecting an internal circuit from an external abnormal input without a protection circuit. The semiconductor device includes a varistor coupled to a conductor for discharging an abnormal input signal input to a ground voltage level. The varistor acts as a conductor when an input signal is an abnormal input signal and acts as an insulator when the input signal is a normal input signal. The use of the varistor may provide an improved ESD protection circuit and then promote the reliability of the semiconductor device.
摘要翻译：公开了一种能够保护内部电路免受静电放电，浪涌脉冲和噪声造成的ESD冲击，损坏和误操作的半导体器件，更具体地说，涉及一种能够将内部电路从外部保护的半导体器件异常输入无保护电路。半导体器件包括耦合到导体的变阻器，用于将输入到接地电压电平的异常输入信号放电。当输入信号为异常输入信号时，压敏电阻充当导体，当输入信号为正常输入信号时，变阻器用作绝缘体。使用变阻器可以提供改进的ESD保护电路，然后提高半导体器件的可靠性。

8. 发明申请

US20110017289A1 CIGS SOLAR CELL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译： CIGS太阳能电池及其制造方法
公开(公告)号：US20110017289A1
公开(公告)日：2011-01-27
申请号：US12769756
申请日：2010-04-29
申请人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
发明人： Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0749 , H01L31/0236 , H01L31/0322 , H01L31/1828 , Y02E10/541 , Y02E10/543
摘要： Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.
摘要翻译：提供CIGS太阳能电池和制造CIGS太阳能电池的方法。在该方法中，形成暴露突起的缓冲层。然后，形成具有与缓冲层的突起一致的不平坦表面的窗口电极层。因此，为了降低入射的太阳光的表面反射率和提高太阳能电池的效率，不需要用于使窗口电极层的上表面粗糙化的附加工艺，从而可以提高生产率。

9. 发明授权

US07818697B2 Method for improving yield of a layout and recording medium having the layout 失效
标题翻译：用于提高布局的产量的方法和具有布局的记录介质
公开(公告)号：US07818697B2
公开(公告)日：2010-10-19
申请号：US11822997
申请日：2007-07-11
申请人： Dae Hyung Cho
发明人： Dae Hyung Cho
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A yield of a semiconductor layout may be improved by selecting a pattern that does not satisfy at least one of multiple rules within the layout, adding a margin to a predetermined value of the at least one of the rules associated with selected pattern, based on a ground rule and a recommended rule of each of the rules, calculating an overall fail rate of at least one of the rules that varies according to the addition of the margin, and determining an adjusted margin to be added based on the calculated overall fail rate.
摘要翻译：可以通过选择不满足布局中的多个规则中的至少一个的模式来增加半导体布局的产量，该模式基于所选择的模式而将与所选模式相关联的至少一个规则的预定值添加余量基准规则和每个规则的推荐规则，计算根据增加保证金而变化的规则中的至少一个的总体失败率，以及基于计算出的总体故障率来确定要添加的调整余量。

10. 发明申请

US20080046847A1 Method for improving yield of a layout and recording medium having the layout 失效
标题翻译：用于提高布局的产量的方法和具有布局的记录介质
公开(公告)号：US20080046847A1
公开(公告)日：2008-02-21
申请号：US11822997
申请日：2007-07-11
申请人： Dae Hyung Cho
发明人： Dae Hyung Cho
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A yield of a semiconductor layout may be improved by selecting a pattern that does not satisfy at least one of multiple rules within the layout, adding a margin to a predetermined value of the at least one of the rules associated with selected pattern, based on a ground rule and a recommended rule of each of the rules, calculating an overall fail rate of at least one of the rules that varies according to the addition of the margin, and determining an adjusted margin to be added based on the calculated overall fail rate.
摘要翻译：可以通过选择不满足布局中的多个规则中的至少一个的模式来增加半导体布局的产量，该模式基于所选择的模式而将与所选模式相关联的至少一个规则的预定值添加余量基准规则和每个规则的推荐规则，计算根据增加保证金而变化的规则中的至少一个的总体失败率，以及基于计算出的总体故障率来确定要添加的调整余量。

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