会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Impurity processing apparatus and method for cleaning impurity processing apparatus
    • 杂质处理装置和清洗杂质处理装置的方法
    • US06435196B1
    • 2002-08-20
    • US09451706
    • 1999-12-01
    • Noritada SatohKouichi OhiraBunya MatsuiKazuo Maeda
    • Noritada SatohKouichi OhiraBunya MatsuiKazuo Maeda
    • B08B600
    • H01L21/67028
    • The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. This apparatus includes a chamber having an introduction port for an impurity-containing ion gas which is connected to an impurity-containing gas supply section, a substrate holder supporting a substrate which is to be ion-injected, or doped, or on which a film is formed using the impurity-containing gas, an introduction port of a water-containing gas which is provided upstream of the substrate holder in accordance with a flow direction of the impurity-containing gas, and is connected to a water-containing gas supply section, and first plasma generating means in a space extending from the introduction port for water-containing gas to the substrate holder for converting water-containing gas to a plasma.
    • 本发明涉及在半导体衬底等中掺杂诸如磷,硼等杂质的杂质处理装置,或PSG(磷酸硅酸盐玻璃)膜,BSG(硼硅酸盐玻璃)膜或BPSG( BoroPhospho硅酸盐玻璃)膜或碳膜等。该装置包括具有与含杂质气体供给部连接的含杂质离子气体导入口的室,支撑待离子化的基板的基板保持架 注入或掺杂,或者使用含杂质的气体形成膜,根据含杂质气体的流动方向设置在衬底保持器的上游的含水气体的引入口, 并且连接到含水气体供给部,并且在从含水气体的导入口延伸到用于转换含水气体的基板保持器的空间中的第一等离子体产生装置 g气体到等离子体。
    • 5. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US06479408B2
    • 2002-11-12
    • US09843725
    • 2001-04-30
    • Yoshimi ShioyaKouichi OhiraKazuo Maeda
    • Yoshimi ShioyaKouichi OhiraKazuo Maeda
    • H01L2131
    • H01L21/02126C23C16/30H01L21/02216H01L21/02274H01L21/3122H01L21/76801H01L21/76802H01L21/76834H01L21/76838
    • The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.
    • 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21,并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤,其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜,绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成,该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O,H2O和CO2组成的组相互反应。
    • 6. 发明授权
    • Apparatus for forming a film on a wafer
    • 用于在晶片上形成薄膜的装置
    • US5589001A
    • 1996-12-31
    • US159127
    • 1993-11-30
    • Kazuo MaedaKouichi OhiraHiroshi Chino
    • Kazuo MaedaKouichi OhiraHiroshi Chino
    • H01L21/205C23C16/44C23C16/458H01L21/00H01L21/304C23C16/00
    • H01L21/67115C23C16/4407C23C16/4584
    • An apparatus for forming a film by the CVD method allows reaction products to be easily removed from a gas discharge surface without decreasing the uptime/downtime ratio, and includes a gas distributor having a gas discharge surface for discharge of a reaction gas for forming a film on a substrate. A wafer holder has a wafer mounting surface facing the gas discharge surface. A cleaner has a suction head and a brush formed at the entrance of the suction head. A rotary shaft supports the cleaner for movement between the gas discharge surface and a stand-by position and brings the brush of the cleaner onto the gas discharge surface. A vertical positioner moves the wafer holder or gas distributor upward or downward, whereby the wafer holder approaches the gas discharge surface for forming a film and is spaced from the gas discharge surface when cleaning the gas discharge surface by movement of the cleaner on the gas discharge surface.
    • 通过CVD法形成膜的装置允许反应产物容易地从气体放电表面除去而不减少正常运行时间/停机时间比,并且包括具有用于排出形成膜的反应气体的气体放电表面的气体分配器 在基板上。 晶片保持器具有面向气体排出表面的晶片安装表面。 吸尘器在吸头的入口处形成有吸头和刷子。 旋转轴支撑清洁器,用于在排气表面和待机位置之间移动,并将清洁器的刷子带到排气表面上。 垂直定位器向上或向下移动晶片保持器或气体分配器,由此晶片保持器靠近气体排出表面以形成膜,并且通过清洁器在气体放电上的移动来清洁气体排出表面时与气体排出表面间隔开 表面。
    • 7. 发明授权
    • Apparatus for manufacturing semiconductor device
    • 半导体器件制造装置
    • US5302209A
    • 1994-04-12
    • US930709
    • 1992-10-27
    • Kazuo MaedaKouichi OhiraMitsuo Hirose
    • Kazuo MaedaKouichi OhiraMitsuo Hirose
    • C23C14/56C23C16/458C23C16/54C30B25/12C30B25/14H01L21/00H01L21/205H01L21/31H01L21/677H01L21/68C23C16/00
    • H01L21/68764C23C16/4584C23C16/54H01L21/67167H01L21/67778H01L21/68771
    • A continuous type automated apparatus for manufacturing a semiconductor device by forming a film on a wafer by a CVD method. The apparatus moves the wafer while maintaining the wafer at a predetermined temperature, and controls production of individual wafers and formation of multi-layer films of different types. The apparatus includes a wafer holder, a rotary shaft for supporting the wafer holder so that wafer loading surfaces of the wafer holder rotate in a circle within a single plane. A gas dispersion unit is provided separate from the wafer holder and facing the wafer loading surface of the wafer holder. A first pair of contacts are electrically connected to a heater and are mounted on the rotary shaft and a second pair of contacts are connected to a power source are in sliding contact with the first pair of contacts so that the rotation of the rotary shaft is not obstructed. This apparatus is useful as a continuous type automated CVD apparatus.
    • PCT No.PCT / JP92 / 00135 Sec。 371日期:1992年10月27日 102(e)日期1992年10月27日PCT提交1992年2月12日PCT公布。 公开号WO92 / 15114 日期:1992年9月3日。一种用于通过CVD方法在晶片上形成薄膜制造半导体器件的连续型自动化装置。 该装置在将晶片保持在预定温度的同时移动晶片,并且控制单个晶片的生产和形成不同类型的多层膜。 该装置包括晶片保持器,用于支撑晶片保持器的旋转轴,使得晶片保持器的晶片加载表面在单个平面内以圆形旋转。 气体分散单元与晶片保持器分离设置并面向晶片保持器的晶片装载表面。 第一对触点电连接到加热器并且安装在旋转轴上,并且连接到电源的第二对触点与第一对触点滑动接触,使得旋转轴的旋转不是 阻碍了 该装置可用作连续型自动化CVD装置。