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1. 发明授权

US06435196B1 Impurity processing apparatus and method for cleaning impurity processing apparatus 失效
标题翻译：杂质处理装置和清洗杂质处理装置的方法
公开(公告)号：US06435196B1
公开(公告)日：2002-08-20
申请号：US09451706
申请日：1999-12-01
申请人： Noritada Satoh , Kouichi Ohira , Bunya Matsui , Kazuo Maeda
发明人： Noritada Satoh , Kouichi Ohira , Bunya Matsui , Kazuo Maeda
IPC分类号： B08B600
CPC分类号： H01L21/67028
摘要： The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. This apparatus includes a chamber having an introduction port for an impurity-containing ion gas which is connected to an impurity-containing gas supply section, a substrate holder supporting a substrate which is to be ion-injected, or doped, or on which a film is formed using the impurity-containing gas, an introduction port of a water-containing gas which is provided upstream of the substrate holder in accordance with a flow direction of the impurity-containing gas, and is connected to a water-containing gas supply section, and first plasma generating means in a space extending from the introduction port for water-containing gas to the substrate holder for converting water-containing gas to a plasma.
摘要翻译：本发明涉及在半导体衬底等中掺杂诸如磷，硼等杂质的杂质处理装置，或PSG（磷酸硅酸盐玻璃）膜，BSG（硼硅酸盐玻璃）膜或BPSG（ BoroPhospho硅酸盐玻璃）膜或碳膜等。该装置包括具有与含杂质气体供给部连接的含杂质离子气体导入口的室，支撑待离子化的基板的基板保持架注入或掺杂，或者使用含杂质的气体形成膜，根据含杂质气体的流动方向设置在衬底保持器的上游的含水气体的引入口，并且连接到含水气体供给部，并且在从含水气体的导入口延伸到用于转换含水气体的基板保持器的空间中的第一等离子体产生装置 g气体到等离子体。

2. 发明授权

US06207537B1 Method for formation of impurity region in semiconductor layer and apparatus for introducing impurity to semiconductor layer 失效
标题翻译：在半导体层中形成杂质区域的方法和用于将杂质引入半导体层的装置
公开(公告)号：US06207537B1
公开(公告)日：2001-03-27
申请号：US09233114
申请日：1999-01-19
申请人： Noritada Satoh , Bunya Matsui
发明人： Noritada Satoh , Bunya Matsui
IPC分类号： H01L2104
CPC分类号： H01L21/67017 , H01L21/2236 , H01L21/67109
摘要： The invention relates to method of formation of an impurity region in a semiconductor layer by introducing a dopant impurity as a donor or an acceptor. The formation method comprises the steps of: mixing an impurity gas with a gas containing any one of H2 and an inert gas, electrically discharging the mixed gas, diffusing impurities adhered to the surface of a semiconductor layer into the semiconductor layer, by introducing the discharged impurity gas to the surface of the semiconductor layer and at the same time accelerating ions of the gas containing any one of the H2 and inert gases to irradiate the surface of the semiconductor layer and, by raising the temperature of the surface of the semiconductor layer, electrically activating the same.
摘要翻译：本发明涉及通过引入掺杂剂杂质作为供体或受体来形成半导体层中杂质区的方法。形成方法包括以下步骤：将杂质气体与包含H 2和惰性气体中的任一种的气体混合，对混合气体进行电放电，将附着在半导体层表面的杂质扩散到半导体层中，杂质气体到半导体层的表面，并且同时加速含有任何一种H 2和惰性气体的气体的离子以照射半导体层的表面，并且通过提高半导体层的表面的温度，电激活它。

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