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    • 1. 发明授权
    • Termination of semiconductor components
    • 半导体元件的终止
    • US06956249B2
    • 2005-10-18
    • US10669024
    • 2003-09-23
    • Roland SittigDetlef NagelRalf-Ulrich DuddeBernd WagnerKlaus Reimer
    • Roland SittigDetlef NagelRalf-Ulrich DuddeBernd WagnerKlaus Reimer
    • H01L29/06H01L29/40H01L29/47H01L29/74H01L29/78H01L29/861H01L29/872
    • H01L29/7811H01L29/402H01L29/404H01L29/7813H01L29/872
    • The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . . , 11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
    • 本发明涉及能够阻挡(IGBT),晶闸管,GTO或二极管,特别是肖特基二极管的半导体元件。 设置在阳极金属涂层(1,31)的边界区域中的绝缘体轮廓部分(10a,10b,10b,10d,11)被固定(直接在边缘区域中)在基底(9)上 组件。 绝缘体轮廓具有弯曲区域(KB)和基部区域(SB),所述弯曲区域具有开始平坦并以稳定增加的方式向外和向上弯曲的表面(OF)。 金属涂层(MET 1; 30 a,30 b,30 c,30 d,31 b)沉积在表面(OF)上。 所述涂层直接遵循表面曲率并横向延伸内阳极金属涂层。 弯曲的金属涂层(MET 1; 30 a,30 b ...)的上端通过绝缘体的周围基部区域(SB)与这些周围的外部金属涂层(MET2; 3)中的一个隔开并绝缘 (10 a,...,11),使得当反向电压或阻塞电压时,在金属涂层(1,31,MET1; 3,MET2)之间产生逃避极值的力线的广泛恒定过程 应用于间隔金属涂层之间。
    • 3. 发明授权
    • Optimized border of semiconductor components
    • 优化半导体元件的边界
    • US06426540B1
    • 2002-07-30
    • US09555040
    • 2000-08-23
    • Roland SittigDetlef NagelRalf-Ulrich DuddeBernd WagnerKlaus Reimer
    • Roland SittigDetlef NagelRalf-Ulrich DuddeBernd WagnerKlaus Reimer
    • H01L27095
    • H01L29/7811H01L29/402H01L29/404H01L29/7813H01L29/872
    • The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . . , 11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
    • 本发明涉及能够阻挡(IGBT),晶闸管,GTO或二极管,特别是肖特基二极管的半导体元件。 设置在阳极金属涂层(1,31)的边界区域中的绝缘体轮廓部分(10a,10b,10c,10d,11)在组件的基底(9)上固定(直接在边缘区域中)。 绝缘体轮廓具有弯曲区域(KB)和基部区域(SB),所述弯曲区域具有开始平坦并以稳定增加的方式向外和向上弯曲的表面(OF)。 金属涂层MET1; 30a,30b,30c,30d,31b)沉积在表面(OF)上。 所述涂层直接遵循表面曲率并横向延伸内阳极金属涂层。 弯曲金属涂层(MET1; 30a,30b ...)的上端通过绝缘体轮廓(10a,30b ...)的周围基部区域(SB)与这些周围的外部金属涂层(MET2; 3)之一间隔开并隔离, 这样,当在间隔金属涂层之间施加反向电压或阻挡电压时,在金属涂层(1,31,MET1; 3,MET2)之间产生逃避极值的力线的广泛恒定过程 。
    • 8. 发明授权
    • Preparation of C10-C30-alkenes by partial hydrogenation of alkynes over fixed-bed supported palladium catalysts
    • 通过固定床负载的钯催化剂上的炔进行部分氢化制备C10-C30-烯烃
    • US06365790B2
    • 2002-04-02
    • US09734024
    • 2000-12-12
    • Klaus ReimerGerd KaibelUlrich KammelFranz Josef BröckerAndreas AnsmannHeinz EtzrodtManfred StroezelMathias HaakeLothar LaupichlerBernhard Bockstiegel
    • Klaus ReimerGerd KaibelUlrich KammelFranz Josef BröckerAndreas AnsmannHeinz EtzrodtManfred StroezelMathias HaakeLothar LaupichlerBernhard Bockstiegel
    • C07C2900
    • C07C29/17B01J23/44B01J23/50B01J35/04B01J35/06B01J37/0217B01J37/0225B01J37/08C07C5/09C07C2523/44C07C11/02C07C33/025C07C33/02
    • Alkenes are prepared by partial hydrogenation of alkynes in the liquid phase at from 20 to 250° C. and hydrogen partial pressures of from 0.3 to 200 bar over fixed-bed supported palladium catalysts which are obtainable by heating the support material in the air, cooling, applying a palladium compound and, if required, additionally other metal ions for doping purposes, molding and processing to give monolithic catalyst elements, by a process in which A) alkynes of 10 to 30 carbon atoms are used as starting compounds, B) the palladium compound and, if required, the other metal ions are applied to the support material by impregnation of the heated and cooled support material with a solution containing palladium salts and, if required, other metal ions and subsequent drying, and C) from 10 to 2000 ppm of carbon monoxide (CO) are added to the hydrogenation gas or a corresponding amount of CO is allowed to form in the liquid phase by slight decomposition of a compound which is added to the reaction mixture and eliminates CO under the reaction conditions. The process is particularly advantageous if the partial hydrogenation is carried out in a tube reactor by the trickle-bed or liquid phase procedure with product recycling at cross-sectional loadings of from 20 to 500 m3/m2*h. The process is particularly suitable for the preparation of 3,7,11,15-tetramethyl-1-hexadecen-3-ol (isophytol), 3,7,11-trimethyl-l-dodecen-3-ol (tetrahydronerolidol), 3,7,11-trimethyl-1,4-dodecadien-3-ol, 3,7,11-trimethyl-1,6-dodecadien-3-ol (dihydronerolidol), 3,7-dimethyloct-1,6-dien-3-ol or 3,7-dimethyloct-1-en-3-ol from the corresponding alkynes.
    • 烯烃通过液相中炔烃在20至250℃的部分氢化和固定床负载的钯催化剂的0.3至200巴的氢分压来制备,其可通过加热空气中的载体材料,冷却 使用钯化合物,另外还需要另外的金属离子用于掺杂目的,通过使用10-30个碳原子的炔烃作为起始化合物的方法,模塑和加工以得到整体式催化剂元素,B)钯 如果需要,另外的金属离子通过用含有钯盐的溶液浸渍加热和冷却的载体材料以及如果需要的话其它金属离子并随后干燥而被施加到载体材料上,C)为10-2000ppm 的一氧化碳(CO)加入到氢化气体中,或者相应量的CO在液相中形成,通过轻微分解添加到真空中的化合物 并且在反应条件下消除CO。如果部分氢化在管式反应器中通过滴流床或液相方法进行,则该方法是特别有利的,其中产物回收的横截面负荷为20-500m 3 / m2 * h。 该方法特别适用于制备3,7,11,15-四甲基-1-十六碳烯-3-醇(异山梨糖醇),3,7,11-三甲基-1-十二碳烯-3-醇(四氢化吗啉醇),3 ,7,11-三甲基-1,4-十二碳二烯-3-醇,3,7,11-三甲基-1,6-十二碳二烯-3-醇(二氢吗啉醇),3,7-二甲基辛-1,6-二烯 - 3-醇或3,7-二甲基辛-1-烯-3-醇。