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1. 发明授权

US06956249B2 Termination of semiconductor components 失效
标题翻译：半导体元件的终止
公开(公告)号：US06956249B2
公开(公告)日：2005-10-18
申请号：US10669024
申请日：2003-09-23
申请人： Roland Sittig , Detlef Nagel , Ralf-Ulrich Dudde , Bernd Wagner , Klaus Reimer
发明人： Roland Sittig , Detlef Nagel , Ralf-Ulrich Dudde , Bernd Wagner , Klaus Reimer
IPC分类号： H01L29/06 , H01L29/40 , H01L29/47 , H01L29/74 , H01L29/78 , H01L29/861 , H01L29/872
CPC分类号： H01L29/7811 , H01L29/402 , H01L29/404 , H01L29/7813 , H01L29/872
摘要： The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . . , 11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
摘要翻译：本发明涉及能够阻挡（IGBT），晶闸管，GTO或二极管，特别是肖特基二极管的半导体元件。设置在阳极金属涂层（1,31）的边界区域中的绝缘体轮廓部分（10a，10b，10b，10d，11）被固定（直接在边缘区域中）在基底（9）上组件。绝缘体轮廓具有弯曲区域（KB）和基部区域（SB），所述弯曲区域具有开始平坦并以稳定增加的方式向外和向上弯曲的表面（OF）。金属涂层（MET 1; 30 a，30 b，30 c，30 d，31 b）沉积在表面（OF）上。所述涂层直接遵循表面曲率并横向延伸内阳极金属涂层。弯曲的金属涂层（MET 1; 30 a，30 b ...）的上端通过绝缘体的周围基部区域（SB）与这些周围的外部金属涂层（MET2; 3）中的一个隔开并绝缘（10 a，...，11），使得当反向电压或阻塞电压时，在金属涂层（1,31，MET1; 3，MET2）之间产生逃避极值的力线的广泛恒定过程应用于间隔金属涂层之间。

2. 发明授权

US06426540B1 Optimized border of semiconductor components 失效
标题翻译：优化半导体元件的边界
公开(公告)号：US06426540B1
公开(公告)日：2002-07-30
申请号：US09555040
申请日：2000-08-23
申请人： Roland Sittig , Detlef Nagel , Ralf-Ulrich Dudde , Bernd Wagner , Klaus Reimer
发明人： Roland Sittig , Detlef Nagel , Ralf-Ulrich Dudde , Bernd Wagner , Klaus Reimer
IPC分类号： H01L27095
CPC分类号： H01L29/7811 , H01L29/402 , H01L29/404 , H01L29/7813 , H01L29/872
摘要： The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a, . . . , 11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
摘要翻译：本发明涉及能够阻挡（IGBT），晶闸管，GTO或二极管，特别是肖特基二极管的半导体元件。设置在阳极金属涂层（1,31）的边界区域中的绝缘体轮廓部分（10a，10b，10c，10d，11）在组件的基底（9）上固定（直接在边缘区域中）。绝缘体轮廓具有弯曲区域（KB）和基部区域（SB），所述弯曲区域具有开始平坦并以稳定增加的方式向外和向上弯曲的表面（OF）。金属涂层MET1; 30a，30b，30c，30d，31b）沉积在表面（OF）上。所述涂层直接遵循表面曲率并横向延伸内阳极金属涂层。弯曲金属涂层（MET1; 30a，30b ...）的上端通过绝缘体轮廓（10a，30b ...）的周围基部区域（SB）与这些周围的外部金属涂层（MET2; 3）之一间隔开并隔离，这样，当在间隔金属涂层之间施加反向电压或阻挡电压时，在金属涂层（1,31，MET1; 3，MET2）之间产生逃避极值的力线的广泛恒定过程。

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