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1. 发明授权

US06277756B1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06277756B1
公开(公告)日：2001-08-21
申请号：US09501762
申请日：2000-02-10
申请人： Junji Ohara , Shinji Yoshihara , Kazuhiko Kano , Nobuyuki Ohya
发明人： Junji Ohara , Shinji Yoshihara , Kazuhiko Kano , Nobuyuki Ohya
IPC分类号： H01L21311
CPC分类号： G01P15/0802 , B81B2203/033 , B81C1/00619 , B81C2201/0112 , H01L21/30655 , H01L21/762
摘要： A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.
摘要翻译：一种制造半导体器件的方法，其可以通过相对简单的步骤有效地形成具有高纵横比的沟槽。通过使用氧化物膜掩模作为蚀刻掩模的反应离子蚀刻在硅衬底中形成初始沟槽。在沟槽的内表面上形成保护氧化膜之后，通过反应离子蚀刻去除沟槽底面的位置的保护氧化膜的一部分，使得硅衬底的蚀刻通过沟槽的底面。此外，重复执行用于形成保护氧化膜的步骤和重新蚀刻沟槽的底表面的步骤，使得沟槽的深度变为预定深度。这些步骤通过使用等离子体处理的切换气体被引入腔室在公共室中进行。

2. 发明授权

US06388300B1 Semiconductor physical quantity sensor and method of manufacturing the same 有权
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US06388300B1
公开(公告)日：2002-05-14
申请号：US09490372
申请日：2000-01-24
申请人： Kazuhiko Kano , Junji Ohara , Nobuyuki Ohya
发明人： Kazuhiko Kano , Junji Ohara , Nobuyuki Ohya
IPC分类号： H01L2994
CPC分类号： B81B3/0086 , B81B2201/0235 , B81B2203/0136 , B81B2203/0315 , B81B2203/04 , G01C19/5656 , G01P15/0802 , G01P15/125 , G01P15/131 , G01P2015/0814
摘要： A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor physical quantity sensor such as an acceleration sensor includes a silicon substrate; a laterally extending hollow formed in the silicon substrate; and a base plate portion defined below the hollow in the silicon substrate. A rectangular frame portion, a beam-structure having a movable electrode, and a fixed electrode is defined by the hollow and trenches. The fixed electrode confronts with the movable electrodes of the beam-structure. Trenches, in which electrical insulating material is buried, are formed between the movable electrode and the rectangular frame portion and between the fixed electrodes and the rectangular frame portion.
摘要翻译：一种半导体物理量传感器，其中具有可移动电极的束结构和面对可动电极的固定电极一体地形成在一个基板中，具有新的电隔离结构。诸如加速度传感器的半导体物理量传感器包括硅衬底; 形成在硅衬底中的横向延伸的中空; 以及限定在硅衬底中的中空部下方的基板部。由中空和沟槽限定矩形框架部分，具有可移动电极的束结构和固定电极。固定电极与梁结构的可动电极相对。在可动电极和矩形框架部分之间以及在固定电极和矩形框架部分之间形成有埋入电绝缘材料的沟槽。

3. 发明授权

US07201053B2 Capacitance type physical quantity sensor 有权
标题翻译：电容式物理量传感器
公开(公告)号：US07201053B2
公开(公告)日：2007-04-10
申请号：US10834183
申请日：2004-04-29
申请人： Tetsuo Yoshioka , Akihiko Teshigahara , Junji Ohara , Yukihiro Takeuchi , Toshimasa Yamamoto , Kazuhiko Kano
发明人： Tetsuo Yoshioka , Akihiko Teshigahara , Junji Ohara , Yukihiro Takeuchi , Toshimasa Yamamoto , Kazuhiko Kano
IPC分类号： G01P15/125 , G01P9/04
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.
摘要翻译：电容式物理量传感器检测物理量。传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。固定电极包括面向可动电极的检测面的检测面。可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。可移动和固定电极中的至少一个包括凹槽。凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

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