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1. 发明授权

US08445301B2 Thin-film transistor substrate, method of manufacturing the same, and display device including the same 有权
标题翻译：薄膜晶体管基板及其制造方法以及包括该薄膜晶体管基板的显示装置
公开(公告)号：US08445301B2
公开(公告)日：2013-05-21
申请号：US13027453
申请日：2011-02-15
申请人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
发明人： Kap-Soo Yoon , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/78693 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L51/5203
摘要： Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
摘要翻译：提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

2. 发明授权

US08174660B2 Metal line, method of forming the same, and a display using the same 失效
标题翻译：金属线，其形成方法和使用其的显示器
公开(公告)号：US08174660B2
公开(公告)日：2012-05-08
申请号：US12332249
申请日：2008-12-10
申请人： Sung Ryul Kim , Yong-Mo Choi , Sung-Hoon Yang , Hwa-Yeul Oh , Kap-Soo Yoon , Jae-Ho Choi , Seong-Hun Kim
发明人： Sung Ryul Kim , Yong-Mo Choi , Sung-Hoon Yang , Hwa-Yeul Oh , Kap-Soo Yoon , Jae-Ho Choi , Seong-Hun Kim
IPC分类号： G02F1/1343
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , Y10T428/24975
摘要： Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device.
摘要翻译：提供一种金属线，其形成方法和使用该线的显示器。为了增加具有CuO / Cu多层结构的金属线的电阻并防止起泡形成，使用含氮气体和含硅气体或使用氢或氩作为含硅气体进行等离子体处理。因此，在铜层上薄膜地形成诸如SiN x或Si层的等离子体处理层，从而防止铜层的电阻增加，并且还防止由氧化铜层损坏引起的起泡形成。因此，可以提高铜线的可靠性，从而提高装置的可靠性。

3. 发明申请

US20100053486A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20100053486A1
公开(公告)日：2010-03-04
申请号：US12536693
申请日：2009-08-06
申请人： Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： G02F1/1343 , G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136213 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要： A liquid crystal display (LCD) includes a gate wiring, a first insulating substrate, an oxide active layer pattern, a data wiring, a floating electrode, and an upper gate electrode. The gate wiring includes a gate line formed on the first insulating substrate and a lower gate electrode extending from the gate line. The oxide active layer pattern is formed on the gate wiring. The data wiring includes a data line intersecting the gate line. The floating electrode generates a coupling capacitance by overlapping the gate wiring. The upper gate electrode is capacitively coupled to the lower gate electrode.
摘要翻译：液晶显示器（LCD）包括栅极布线，第一绝缘基板，氧化物活性层图案，数据布线，浮动电极和上部栅电极。栅极布线包括形成在第一绝缘基板上的栅极线和从栅极线延伸的下部栅电极。氧化物有源层图案形成在栅极布线上。数据线包括与栅极线相交的数据线。浮动电极通过重叠栅极布线而产生耦合电容。上栅电极电容耦合到下栅电极。

4. 发明申请

US20100019996A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20100019996A1
公开(公告)日：2010-01-28
申请号：US12486542
申请日：2009-06-17
申请人： Chun-Gi YOU , Kap-Soo YOON , Gug-Rae JO , Sung-Hoon YANG , Ki-Hun JEONG , Seung-Hwan SHIM , Jae-Ho CHOI
发明人： Chun-Gi YOU , Kap-Soo YOON , Gug-Rae JO , Sung-Hoon YANG , Ki-Hun JEONG , Seung-Hwan SHIM , Jae-Ho CHOI
IPC分类号： G09G3/30 , H01L21/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3262 , H01L29/7869
摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.
摘要翻译：显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案，电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

5. 发明申请

US20090184315A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有改进的电气特性的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20090184315A1
公开(公告)日：2009-07-23
申请号：US12355646
申请日：2009-01-16
申请人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
发明人： Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1296 , H01L29/4908
摘要： A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
摘要翻译：提供了可以具有高电荷迁移率并且可以实现宽显示装置的均匀电特性的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括具有通道并形成在绝缘基板上的氧化物半导体层，与氧化物半导体层重叠的栅极电极，设置在氧化物半导体层和栅电极之间的栅极绝缘膜，以及形成的钝化膜在氧化物半导体层和栅电极上。栅极绝缘膜和钝化膜中的至少一个含有含氟硅。

6. 发明授权

US06802949B2 Method for manufacturing half-metallic magnetic oxide and plasma sputtering apparatus used in the same 失效
标题翻译：用于制造其中使用的半金属磁性氧化物和等离子体溅射装置的方法
公开(公告)号：US06802949B2
公开(公告)日：2004-10-12
申请号：US10269865
申请日：2002-10-15
申请人： Jin Pyo Hong , Chang Hyo Lee , Chae Ok Kim , Kap Soo Yoon , Sung Bok Lee
发明人： Jin Pyo Hong , Chang Hyo Lee , Chae Ok Kim , Kap Soo Yoon , Sung Bok Lee
IPC分类号： C23C1435
CPC分类号： H01J37/3447 , C23C14/0036 , C23C14/085 , C23C14/3471 , H01J37/3402
摘要： Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.
摘要翻译：公开了一种制造半金属磁性氧化物的方法和用于该方法的等离子体溅射装置。设置有至少一个孔的导体设置在等离子体溅射装置中的金属靶和衬底保持器之间，从而改善从金属靶释放的金属离子与氧离子的结合，以及矫顽力大于在基板上形成薄膜的薄膜，从而获得具有优异性能的磁性氧化膜。在本发明的优选实施例中，导体侧电源单元连接到导体，从而另外向导体供电并产生第二等离子体。等离子体溅射装置提供高功率以分解氧气，并通过附加电源以精确的比例以不同电价排出金属离子，从而有效地用于在低温下制造半金属氧化物。

7. 发明授权

US09570621B2 Display substrate, method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US09570621B2
公开(公告)日：2017-02-14
申请号：US12977853
申请日：2010-12-23
申请人： Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
发明人： Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78633
摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要翻译：本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化的氧化物半导体。 TFT包括氧化物半导体层; 与所述氧化物半导体层的沟道区域重叠的保护层; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 漏电极，与所述氧化物半导体层的第二侧接触，并跨过所述沟道区面对所述源电极; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

8. 发明授权

US08772897B2 Thin-film transistor, array substrate having the same and method of manufacturing the same 有权
标题翻译：薄膜晶体管，具有相同的阵列基板及其制造方法
公开(公告)号：US08772897B2
公开(公告)日：2014-07-08
申请号：US13049783
申请日：2011-03-16
申请人： Ki-Won Kim , Kap-Soo Yoon , Woo-Geun Lee , Yeong-Keun Kwon , Hye-Young Ryu , Jin-Won Lee , Hyun-Jung Lee
发明人： Ki-Won Kim , Kap-Soo Yoon , Woo-Geun Lee , Yeong-Keun Kwon , Hye-Young Ryu , Jin-Won Lee , Hyun-Jung Lee
IPC分类号： H01L27/146
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/124 , H01L29/78645 , H01L29/78648
摘要： A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。半导体图案形成在基板上。第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。第二栅电极与半导体图案，源电极和漏电极电绝缘。

9. 发明授权

US08723179B2 Thin film transistor panel having an etch stopper on semiconductor 有权
标题翻译：薄膜晶体管板在半导体上具有蚀刻停止层
公开(公告)号：US08723179B2
公开(公告)日：2014-05-13
申请号：US12957743
申请日：2010-12-01
申请人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译：薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的在蚀刻停止器上。

10. 发明授权

US08384871B2 Liquid crystal display apparatus and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08384871B2
公开(公告)日：2013-02-26
申请号：US12686012
申请日：2010-01-12
申请人： Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
发明人： Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1339
CPC分类号： G02F1/1345 , G02F2001/133519
摘要： In a liquid crystal display (LCD) apparatus and a method for manufacturing the LCD apparatus, the LCD apparatus includes first and second substrates, and a liquid crystal layer disposed between the first and second substrates. The first substrate includes a transparent insulating substrate, a conductive layer formed over an entire surface of the transparent insulating substrate, and a transparent conductive electrode formed on the conductive layer.
摘要翻译：在液晶显示（LCD）装置和LCD装置的制造方法中，LCD装置包括第一和第二基板以及设置在第一和第二基板之间的液晶层。第一基板包括透明绝缘基板，形成在透明绝缘基板的整个表面上的导电层和形成在导电层上的透明导电电极。

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