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1. 发明申请

US20100259357A1 THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME 失效
标题翻译：薄膜型变压器及其制造方法
公开(公告)号：US20100259357A1
公开(公告)日：2010-10-14
申请号：US12740624
申请日：2008-08-20
申请人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
发明人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
IPC分类号： H01C7/10 , H01C17/06
CPC分类号： H01C7/112 , C23C14/086 , C23C14/5853 , H01C7/1013 , H01C17/06546 , Y10T29/49099
摘要： A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
摘要翻译：提供薄膜型压敏电阻及其制造方法。该方法包括：通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。因此，可以在保持压敏电阻特性的同时降低加工温度并简化制造工艺，从而应用于高度集成的电路。

2. 发明授权

US07662683B2 Method for forming gate dielectric layer 失效
标题翻译：形成栅介质层的方法
公开(公告)号：US07662683B2
公开(公告)日：2010-02-16
申请号：US10909339
申请日：2004-08-03
申请人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
发明人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02252 , H01L21/022 , H01L21/0228 , H01L21/28158 , H01L21/3141 , H01L21/31612
摘要： Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.
摘要翻译：提供了一种用于形成栅介电层的方法，其中在200℃或更低的温度下通过等离子体精细地形成等离子体氧化物层，并沉积原子层沉积（ALD）氧化物层。此外，根据本发明的栅介质层可以应用于包括易受热的塑料基板等基板的显示装置，具有良好的界面特性，并且可以向其施加高介电层。

3. 发明申请

US20090091003A1 INSULATOR UNDERGOING ABRUPT METAL-INSULATOR TRANSITION, METHOD OF MANUFACTURING THE INSULATOR, AND DEVICE USING THE INSULATOR 审中-公开
标题翻译：绝缘子承受金属绝缘体过渡的破坏，制造绝缘体的方法和使用绝缘体的装置
公开(公告)号：US20090091003A1
公开(公告)日：2009-04-09
申请号：US12089778
申请日：2006-10-16
申请人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
发明人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
IPC分类号： H01L29/51 , B05D5/12 , C23C14/34 , H05H1/24
CPC分类号： H01B3/12 , C23C16/40 , C23C16/403 , C23C16/405 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02271 , H01L21/02274 , H01L21/02304 , H01L21/3141 , H01L21/31604 , H01L21/3162 , H01L49/003
摘要： Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change.
摘要翻译：提供具有2eV以上的能带隙并且经历突发MIT而不经历结构变化的绝缘体，制造绝缘体的方法以及使用该绝缘体的器件。通过电子之间的能量变化，绝缘体从绝缘体相突然转变为金属相，而不发生结构变化。

4. 发明授权

US08031022B2 Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit 失效
标题翻译：包括MIT装置的振荡电路和调整振荡电路的振荡频率的方法
公开(公告)号：US08031022B2
公开(公告)日：2011-10-04
申请号：US12531058
申请日：2008-03-05
申请人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
发明人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
IPC分类号： H03B11/00
CPC分类号： H01L49/003 , H03B9/12
摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
摘要翻译：提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压或电流到MIT设备。根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

5. 发明申请

US20090286140A1 LITHIUM SECONDARY BATTERY INCLUDING DISCHARGE UNIT 有权
标题翻译：锂离子二次电池，包括放电单元
公开(公告)号：US20090286140A1
公开(公告)日：2009-11-19
申请号：US11813898
申请日：2006-01-12
申请人： Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Jung-Wook Lim , Gyung-Ock Kim , Sung-Lyul Maeng
发明人： Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Jung-Wook Lim , Gyung-Ock Kim , Sung-Lyul Maeng
IPC分类号： H01M10/50
CPC分类号： H01M2/34 , H01M2/348 , H01M10/052 , H01M10/443 , H01M2200/00 , H01M2200/106
摘要： Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
摘要翻译：提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。锂二次电池包括与电池体平行设置的放电单元。放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电高于预定的温度。放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。

6. 发明申请

US20090011145A1 Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
标题翻译：制造氧化钒薄膜的方法
公开(公告)号：US20090011145A1
公开(公告)日：2009-01-08
申请号：US12064807
申请日：2006-08-23
申请人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
发明人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/50
摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.
摘要翻译：提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

7. 发明申请

US20050142712A1 Method for forming gate dielectric layer 失效
标题翻译：形成栅介质层的方法
公开(公告)号：US20050142712A1
公开(公告)日：2005-06-30
申请号：US10909339
申请日：2004-08-03
申请人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
发明人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
IPC分类号： H01L29/786 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336
CPC分类号： H01L21/02252 , H01L21/022 , H01L21/0228 , H01L21/28158 , H01L21/3141 , H01L21/31612
摘要： Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.
摘要翻译：提供了一种用于形成栅介电层的方法，其中在200℃或更低的温度下通过等离子体精细地形成等离子体氧化物层，并沉积原子层沉积（ALD）氧化物层。此外，根据本发明的栅介质层可以应用于包括易受热的塑料基板等基板的显示装置，具有良好的界面特性，并且可以向其施加高介电层。

8. 发明授权

US06723642B1 Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition 失效
标题翻译：使用等离子体增强原子层沉积形成含氮氧化物薄膜的方法
公开(公告)号：US06723642B1
公开(公告)日：2004-04-20
申请号：US10377471
申请日：2003-02-27
申请人： Jung-wook Lim , Sun-jin Yun
发明人： Jung-wook Lim , Sun-jin Yun
IPC分类号： H01L2144
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/45529 , C23C16/45542 , C23C16/50 , H01L21/02175 , H01L21/02274 , H01L21/3145 , H01L21/31616
摘要： A method for forming a nitrogen-containing oxide thin film by using plasma enhanced atomic layer deposition is provided. In the method, the nitrogen-containing oxide thin film is deposited by supplying a metal source compound and oxygen gas into a reactor in a cyclic fashion with sequential alternating pulses of the metal source compound and the oxygen gas, wherein the oxygen gas is activated into plasma in synchronization of the pulsing thereof, and a nitrogen source gas is further sequentially pulsed into the reactor and activated into plasma over the substrate in synchronization with the pulsing thereof. According to the method, a dense nitrogen-containing oxide thin film can be deposited at a high rate, and a trace of nitrogen atoms can be incorporated in situ into the nitrogen-containing oxide thin film, thereby increasing the breakdown voltage of the film.
摘要翻译：提供了通过使用等离子体增强原子层沉积来形成含氮氧化物薄膜的方法。在该方法中，通过以金属源化合物和氧气的顺序交替脉冲的循环方式将金属源化合物和氧气供给到反应器中来沉积含氮氧化物薄膜，其中氧气被激活成其脉冲同步的等离子体和氮源气体进一步顺序地脉冲进入反应器并与其脉冲同步地激活到衬底上的等离子体中。根据该方法，可以以高速率沉积致密的含氮氧化物薄膜，并且可以将微量的氮原子并入到含氮氧化物薄膜中，从而增加膜的击穿电压。

9. 发明申请

US20130074918A1 VACUUM WINDOW GLAZING INCLUDING SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：真空玻璃包括太阳能电池及其制造方法
公开(公告)号：US20130074918A1
公开(公告)日：2013-03-28
申请号：US13561226
申请日：2012-07-30
申请人： Jin Woo Jeong , Yoon Ho Song , Sung Youl Choi , Je Ha Kim , Jong Tae Moon , Jung Wook Lim , Hun Kyun Pak
发明人： Jin Woo Jeong , Yoon Ho Song , Sung Youl Choi , Je Ha Kim , Jong Tae Moon , Jung Wook Lim , Hun Kyun Pak
IPC分类号： H01L31/0232 , C03C27/06 , H01L31/0256 , H01L31/0296 , H01L31/0272 , B32B37/14 , H01L31/0264
CPC分类号： C03C27/06 , E06B3/6612 , H01L31/0488 , Y02B10/10 , Y02E10/50 , Y10T156/10
摘要： Disclosed are vacuum window glazing including a solar cell function and a manufacturing method thereof. The vacuum window glazing includes a first sheet glass, a second sheet glass that is vacuum-bonded to the first sheet glass; a vacuum layer that is formed between the first sheet glass and the second sheet glass; and a solar cell panel that is formed on a surface of the second sheet glass in a direction of the vacuum layer. By this configuration, power can be produced through the solar cell formed within the vacuum window glazing while more increasing the heat insulation effect of the vacuum window glazing, and the cooling and heating efficiency of the building can be greatly improved using the outer wall covered with glass.
摘要翻译：公开了包括太阳能电池功能的真空窗玻璃及其制造方法。真空窗玻璃包括第一平板玻璃，与第一平板玻璃真空接合的第二平板玻璃; 形成在所述第一平板玻璃和所述第二平板玻璃之间的真空层; 以及在真空层的方向上形成在第二平板玻璃的表面上的太阳能电池面板。通过这种构造，可以通过在真空窗玻璃中形成的太阳能电池产生电力，同时更加增加真空窗玻璃的隔热效果，并且可以使用覆盖有真空窗玻璃的外壁来大大提高建筑物的冷却和加热效率玻璃。

10. 发明申请

US20100085126A1 OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT 失效
标题翻译：振荡电路包括麻省电器和调节振荡电路的振荡频率的方法
公开(公告)号：US20100085126A1
公开(公告)日：2010-04-08
申请号：US12531058
申请日：2008-03-05
申请人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
发明人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
IPC分类号： H03B1/00
CPC分类号： H01L49/003 , H03B9/12
摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
摘要翻译：提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压或电流到MIT设备。根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

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