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1. 发明授权

US08957441B2 Integrated antenna device module for generating terahertz continuous wave and fabrication method thereof 有权
标题翻译：用于产生太赫兹连续波的集成天线装置模块及其制造方法
公开(公告)号：US08957441B2
公开(公告)日：2015-02-17
申请号：US13292045
申请日：2011-11-08
申请人： Dong Suk Jun , Kwang-Yong Kang , Sungil Kim , Mun Cheol Paek , Han-Cheol Ryu , Min Hwan Kwak , Seung Beom Kang
发明人： Dong Suk Jun , Kwang-Yong Kang , Sungil Kim , Mun Cheol Paek , Han-Cheol Ryu , Min Hwan Kwak , Seung Beom Kang
IPC分类号： H01L33/58 , H01L33/30 , H01Q19/06 , G01J3/10 , G01J3/42 , H01Q9/28 , H01Q15/00 , H01Q15/08
CPC分类号： H01Q19/062 , G01J3/10 , G01J3/42 , H01Q9/285 , H01Q15/0086 , H01Q15/08
摘要： The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.
摘要翻译：本发明的示例性实施例包括在基板的前表面上形成感光体薄膜; 通过图案化感光体薄膜形成感光体薄膜图案; 并在感光体薄膜图案上形成金属电极。

2. 发明申请

US20130156437A1 TERAHERTZ TRANSMITTER 审中-公开
标题翻译： TERAHERTZ发射机
公开(公告)号：US20130156437A1
公开(公告)日：2013-06-20
申请号：US13618681
申请日：2012-09-14
申请人： Sungil KIM , Taeyong KIM , Min Hwan KWAK , Seungbeom KANG , Kwang-Yong KANG
发明人： Sungil KIM , Taeyong KIM , Min Hwan KWAK , Seungbeom KANG , Kwang-Yong KANG
IPC分类号： H04B10/04
CPC分类号： H04B10/90
摘要： Disclosed is a terahertz transmitter which includes a photonics oscillator configured to generate two optical signals with different wavelength and strong correlation; a modulator configured to modulate the optical signals; a pre-amplifier configured to amplify the modulated optical signals; a photomixer configured to generate a terahertz signal through photomixing of the amplified optical signals; and a post-amplifier configured to amplify the terahertz signal and to transmit the amplified terahertz signal through an antenna.
摘要翻译：公开了一种太赫兹发射机，其包括被配置为产生具有不同波长和强相关性的两个光信号的光子振荡器; 配置为调制所述光信号的调制器; 前置放大器，被配置为放大调制的光信号; 配置为通过所述经放大的光信号的光混合产生太赫兹信号的光混合器; 以及后置放大器，被配置为放大太赫兹信号并通过天线发送放大的太赫兹信号。

3. 发明申请

US20130153757A1 WAVEGUIDE PHOTOMIXER 审中-公开
标题翻译：波形光电二极管
公开(公告)号：US20130153757A1
公开(公告)日：2013-06-20
申请号：US13608547
申请日：2012-09-10
申请人： Taeyong KIM , Sungil KIM , Min Hwan KWAK , Seungbeom KANG , Kwang-Yong KANG
发明人： Taeyong KIM , Sungil KIM , Min Hwan KWAK , Seungbeom KANG , Kwang-Yong KANG
IPC分类号： G01J1/04
CPC分类号： G02B6/122 , H01L31/105
摘要： Provided is a waveguide photomixer in which an absorption layer is selectively etched to reduce a junction area. The waveguide photomixer includes a buffer layer disposed on a substrate, a first clad layer disposed on the buffer layer and formed to have smaller width than that of a top surface of the buffer layer, an absorption layer disposed on the first clad layer and formed to have smaller width than that of a top surface of the first clad layer, a second clad layer disposed on the absorption layer and formed to have greater width than that of a top surface of the absorption layer, a contact layer disposed on the second clad layer, a first electrode unit disposed on the buffer layer where the first clad layer is not disposed, and a second electrode unit disposed on the contact layer.
摘要翻译：提供了一种波导光混合器，其中选择性地蚀刻吸收层以减少接合面积。所述波导光混合器包括设置在基板上的缓冲层，设置在所述缓冲层上并形成为具有比所述缓冲层的顶表面小的宽度的第一覆盖层，设置在所述第一覆盖层上并形成为具有比第一包层的顶表面宽的宽度的第二包层，设置在吸收层上并形成为具有比吸收层的顶表面宽的宽度的第二包层，设置在第二包层上的接触层设置在不设置第一覆盖层的缓冲层上的第一电极单元和设置在接触层上的第二电极单元。

4. 发明申请

US20120162747A1 TERAHERTZ CONTINUOUS WAVE GENERATOR 有权
标题翻译： TERAHERTZ连续波发生器
公开(公告)号：US20120162747A1
公开(公告)日：2012-06-28
申请号：US13291225
申请日：2011-11-08
申请人： Sungil KIM , Kwang-Yong KANG , Dong Suk JUN
发明人： Sungil KIM , Kwang-Yong KANG , Dong Suk JUN
IPC分类号： G02F1/35
CPC分类号： G02F1/3534 , G02F1/2255 , G02F2203/13 , H01S3/0078
摘要： A terahertz continuous wave generator includes: an optical intensity modulator configured to modulate an optical signal into DSB optical signals; a local oscillator configured to generate a modulation signal for modulating the optical signal inputted to the optical intensity modulator into DSB optical signals; a notch filter configured to filter an optical signal with a specific frequency; an optical fiber amplifier configured to amplify an output signal of the optical intensity modulator; an optical circulator configured to transmit the optical signal inputted to the optical fiber amplifier to the notch filter and transmit the optical signal reflected from the notch filter to an input of the optical intensity modulator; an optical coupler configured to apply the optical signal to the optical intensity modulator; and an OE converter configured to photomix the DSB signals outputted through the notch filter.
摘要翻译：太赫兹连续波发生器包括：光强调制器，被配置为将光信号调制成DSB光信号; 本地振荡器，被配置为产生用于将输入到所述光强度调制器的光信号调制成DSB光信号的调制信号; 陷波滤波器，被配置为滤波具有特定频率的光信号; 配置为放大所述光强调制器的输出信号的光纤放大器; 光循环器，被配置为将输入到光纤放大器的光信号发送到陷波滤波器，并将从陷波滤波器反射的光信号发射到光强度调制器的输入端; 光耦合器，被配置为将光信号施加到光强度调制器; 以及被配置为对通过陷波滤波器输出的DSB信号进行光混合的OE转换器。

5. 发明申请

US20120086096A1 CONDENSER LENS-COUPLED PHOTOCONDUCTIVE ANTENNA DEVICE FOR TERAHERTZ WAVE GENERATION AND DETECTION AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：用于TERAHERTZ波形发生器的冷凝器镜头耦合光电天线装置及其检测及其制作方法
公开(公告)号：US20120086096A1
公开(公告)日：2012-04-12
申请号：US13268147
申请日：2011-10-07
申请人： Mun Cheol Paek , Kwang-Yong Kang , Min Hwan Kwak , Seungbeom Kang
发明人： Mun Cheol Paek , Kwang-Yong Kang , Min Hwan Kwak , Seungbeom Kang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01Q1/364 , G01J3/0208 , G01J3/0229 , G01J3/42 , H01Q15/08 , H01Q19/062
摘要： Provided are a condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection and a fabricating method thereof. A condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection includes a condenser lens, a photoconductive thin film deposited on the condenser lens, and a metal electrode formed on the photoconductive thin film for a photoconductive antenna. In the antenna device, the condenser lens and the photoconductive thin film are coupled to each other.
摘要翻译：提供一种用于太赫兹波产生和检测的聚光透镜耦合光电导天线装置及其制造方法。用于太赫兹波产生和检测的聚光透镜耦合的光电导天线装置包括聚光透镜，沉积在聚光透镜上的光电导薄膜和形成在光电导天线的光电导薄膜上的金属电极。在天线装置中，聚光透镜和光电导薄膜彼此耦合。

6. 发明授权

US07989792B2 Abrupt metal-insulator transition device with parallel MIT material layers 有权
标题翻译：具有并联MIT材料层的突发金属 - 绝缘体转换装置
公开(公告)号：US07989792B2
公开(公告)日：2011-08-02
申请号：US12162964
申请日：2007-01-31
申请人： Hyun-Tak Kim , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun
发明人： Hyun-Tak Kim , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun
IPC分类号： H01L49/00
CPC分类号： H01L49/003
摘要： An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.
摘要翻译：提供了具有平行MIT材料层的突发MIT（金属 - 绝缘体转变）器件。突变MIT装置包括设置在基板的某个区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及至少一个MIT材料层，电连接第一电极与第二电极电极，并且具有允许MIT材料层的整个区域由于MIT而转变成金属层的宽度。由于这种构造，通常由流过MIT材料层的电流引起的MIT材料层的劣化不太可能发生。

7. 发明授权

US07944360B2 Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor 有权
标题翻译：使用突变金属 - 绝缘体转换（MIT）的温度传感器和包含温度传感器的报警器
公开(公告)号：US07944360B2
公开(公告)日：2011-05-17
申请号：US12090084
申请日：2006-06-27
申请人： Hyun-Tak Kim , Kwang-Yong Kang , Yong-Wook Lee , Byung-Gyu Chae , Bong-Jun Kim , Sang-Kuk Choi , Sun-Jin Yun
发明人： Hyun-Tak Kim , Kwang-Yong Kang , Yong-Wook Lee , Byung-Gyu Chae , Bong-Jun Kim , Sang-Kuk Choi , Sun-Jin Yun
IPC分类号： G08B17/00
CPC分类号： G01K3/005 , G01K7/22
摘要： Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
摘要翻译：提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

8. 发明授权

US07911756B2 Low-voltage noise preventing circuit using abrupt metal-insulator transition device 失效
标题翻译：使用突变金属 - 绝缘体转换器件的低压噪声防止电路
公开(公告)号：US07911756B2
公开(公告)日：2011-03-22
申请号：US11908837
申请日：2006-03-07
申请人： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
发明人： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
IPC分类号： H02H9/00
CPC分类号： H01L49/003
摘要： Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
摘要翻译：提供了一种使用突变金属 - 绝缘体转变（MIT）装置的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。因此，可以有效地消除低电压噪声。

9. 发明授权

US07911125B2 Electron emission device using abrupt metal-insulator transition and display including the same 失效
标题翻译：使用突变金属 - 绝缘体转换的电子发射器件和包括其的显示器
公开(公告)号：US07911125B2
公开(公告)日：2011-03-22
申请号：US12064948
申请日：2006-08-25
申请人： Hyun-Tak Kim , Byung Gyu Chae , Kwang-Yong Kang , Yoon Ho Song
发明人： Hyun-Tak Kim , Byung Gyu Chae , Kwang-Yong Kang , Yoon Ho Song
IPC分类号： H01J1/62
CPC分类号： H01J31/127 , H01J1/316 , H01J2201/316 , H01J2201/3165 , H01J2329/0486 , H01J2329/0489
摘要： An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.
摘要翻译：提供具有高电子发射速率的电子发射装置和包括该装置的显示器。电子发射器件采用突发金属 - 绝缘体转换，器件包括：板; 金属 - 绝缘体转变（MIT）材料层，设置在所述板上并与所分割的MIT材料层的彼此面对的部分分开预定的间隙; 以及连接到分割的金属 - 绝缘体转移材料层的每个部分以将电子发射到分割的金属 - 绝缘体转移材料层的部分之间的间隙的电极。

10. 发明授权

US07767501B2 Devices using abrupt metal-insulator transition layer and method of fabricating the device 失效
标题翻译：使用突变金属 - 绝缘体过渡层的器件及其制造方法
公开(公告)号：US07767501B2
公开(公告)日：2010-08-03
申请号：US11721069
申请日：2005-12-05
申请人： Doo-Hyeb Youn , Hyun-Tak Kim , Byung-Gyu Chae , Sung-Lyul Maeng , Kwang-Yong Kang
发明人： Doo-Hyeb Youn , Hyun-Tak Kim , Byung-Gyu Chae , Sung-Lyul Maeng , Kwang-Yong Kang
IPC分类号： H01L21/335
CPC分类号： H01L49/003 , H01L29/452
摘要： The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.
摘要翻译：突变金属 - 绝缘体转换装置包括：突然的金属绝缘体过渡材料层，其包括小于或等于2eV的能隙和孔内的孔; 并且两个电极接触突变的金属 - 绝缘体转移材料层。这里，两个电极中的每一个通过热处理形成在突变金属 - 绝缘体转移材料层上并包含Ni或Cr的第一层的叠层形成，第二层形成在第一层上并包括In的第三层，第三层形成在第二层上并且包含Mo或W，以及形成在第三层上并包含Au的第四层。

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