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1. 发明申请

US20090011145A1 Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
标题翻译：制造氧化钒薄膜的方法
公开(公告)号：US20090011145A1
公开(公告)日：2009-01-08
申请号：US12064807
申请日：2006-08-23
申请人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
发明人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/50
摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.
摘要翻译：提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

2. 发明申请

US20090091003A1 INSULATOR UNDERGOING ABRUPT METAL-INSULATOR TRANSITION, METHOD OF MANUFACTURING THE INSULATOR, AND DEVICE USING THE INSULATOR 审中-公开
标题翻译：绝缘子承受金属绝缘体过渡的破坏，制造绝缘体的方法和使用绝缘体的装置
公开(公告)号：US20090091003A1
公开(公告)日：2009-04-09
申请号：US12089778
申请日：2006-10-16
申请人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
发明人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
IPC分类号： H01L29/51 , B05D5/12 , C23C14/34 , H05H1/24
CPC分类号： H01B3/12 , C23C16/40 , C23C16/403 , C23C16/405 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02271 , H01L21/02274 , H01L21/02304 , H01L21/3141 , H01L21/31604 , H01L21/3162 , H01L49/003
摘要： Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change.
摘要翻译：提供具有2eV以上的能带隙并且经历突发MIT而不经历结构变化的绝缘体，制造绝缘体的方法以及使用该绝缘体的器件。通过电子之间的能量变化，绝缘体从绝缘体相突然转变为金属相，而不发生结构变化。

3. 发明授权

US08242875B2 Thin film type varistor and a method of manufacturing the same 失效
标题翻译：薄膜型压敏电阻及其制造方法
公开(公告)号：US08242875B2
公开(公告)日：2012-08-14
申请号：US12740624
申请日：2008-08-20
申请人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
发明人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
IPC分类号： H01C7/10
CPC分类号： H01C7/112 , C23C14/086 , C23C14/5853 , H01C7/1013 , H01C17/06546 , Y10T29/49099
摘要： A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
摘要翻译：提供薄膜型压敏电阻及其制造方法。该方法包括：通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。因此，可以在保持压敏电阻特性的同时降低加工温度并简化制造工艺，从而应用于高度集成的电路。

4. 发明申请

US20100259357A1 THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME 失效
标题翻译：薄膜型变压器及其制造方法
公开(公告)号：US20100259357A1
公开(公告)日：2010-10-14
申请号：US12740624
申请日：2008-08-20
申请人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
发明人： Jung Wook Lim , Jun Kwan Kim , Sun Jin Yun , Hyun Tak Kim
IPC分类号： H01C7/10 , H01C17/06
CPC分类号： H01C7/112 , C23C14/086 , C23C14/5853 , H01C7/1013 , H01C17/06546 , Y10T29/49099
摘要： A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
摘要翻译：提供薄膜型压敏电阻及其制造方法。该方法包括：通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。因此，可以在保持压敏电阻特性的同时降低加工温度并简化制造工艺，从而应用于高度集成的电路。

5. 发明授权

US07498053B2 Inorganic thin film electroluminescent device and method for manufacturing the same 有权
标题翻译：无机薄膜电致发光器件及其制造方法
公开(公告)号：US07498053B2
公开(公告)日：2009-03-03
申请号：US10844388
申请日：2004-05-13
申请人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
发明人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
IPC分类号： B05D5/12 , B32B7/02 , H01J29/82
CPC分类号： H05B33/145 , H05B33/22 , Y10S428/917 , Y10T428/24942 , Y10T428/2495
摘要： Provided is an inorganic thin film electroluminescent device including a lower electrode, a lower insulating layer, a phosphor, an upper insulating layer, and an upper electrode, and the method for manufacturing the same, whereby it is possible to obtain the inorganic thin film electroluminescent device capable of realizing high brightness, excellent luminescence efficiency, and low breakdown field.
摘要翻译：提供一种包括下电极，下绝缘层，荧光体，上绝缘层和上电极的无机薄膜电致发光器件及其制造方法，由此可以获得无机薄膜电致发光能够实现高亮度，优异的发光效率和低击穿场的器件。

6. 发明申请

US20050142712A1 Method for forming gate dielectric layer 失效
标题翻译：形成栅介质层的方法
公开(公告)号：US20050142712A1
公开(公告)日：2005-06-30
申请号：US10909339
申请日：2004-08-03
申请人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
发明人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
IPC分类号： H01L29/786 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/336
CPC分类号： H01L21/02252 , H01L21/022 , H01L21/0228 , H01L21/28158 , H01L21/3141 , H01L21/31612
摘要： Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.
摘要翻译：提供了一种用于形成栅介电层的方法，其中在200℃或更低的温度下通过等离子体精细地形成等离子体氧化物层，并沉积原子层沉积（ALD）氧化物层。此外，根据本发明的栅介质层可以应用于包括易受热的塑料基板等基板的显示装置，具有良好的界面特性，并且可以向其施加高介电层。

7. 发明授权

US07662683B2 Method for forming gate dielectric layer 失效
标题翻译：形成栅介质层的方法
公开(公告)号：US07662683B2
公开(公告)日：2010-02-16
申请号：US10909339
申请日：2004-08-03
申请人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
发明人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02252 , H01L21/022 , H01L21/0228 , H01L21/28158 , H01L21/3141 , H01L21/31612
摘要： Provided is a method for forming a gate dielectric layer, in which a plasma oxide layer is finely formed by plasma at a temperature of 200° C. or below, and an atomic layer deposition (ALD) oxide layer is deposited. Further, the gate dielectric layer according to the present invention can be applied to a display device comprising a substrate such as a plastic substrate vulnerable to heat, have good interfacial characteristic, and allow a high dielectric layer to be applied thereto.
摘要翻译：提供了一种用于形成栅介电层的方法，其中在200℃或更低的温度下通过等离子体精细地形成等离子体氧化物层，并沉积原子层沉积（ALD）氧化物层。此外，根据本发明的栅介质层可以应用于包括易受热的塑料基板等基板的显示装置，具有良好的界面特性，并且可以向其施加高介电层。

8. 发明授权

US06730614B1 Method of forming a thin film in a semiconductor device 有权
标题翻译：在半导体器件中形成薄膜的方法
公开(公告)号：US06730614B1
公开(公告)日：2004-05-04
申请号：US10645671
申请日：2003-08-22
申请人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
发明人： Jung Wook Lim , Sun Jin Yun , Jin Ho Lee
IPC分类号： H01L2131
CPC分类号： H01L21/28562 , C23C16/452 , C23C16/45529 , C23C16/45542
摘要： The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio of repetition times of the methods, so that it is possible to adjust and estimate the growth rate, density, and material properties such as refraction index, dielectric constant, electric resistance, etc.
摘要翻译：本发明涉及在半导体器件中形成薄膜的方法。根据该方法，通过交替重复原子层沉积（ALD）法和等离子体增强原子层沉积（PEALD）方法形成薄膜，并进一步通过调节方法的重复次数比例，从而可以调整和估计生长速率，密度和材料性质如折射率，介电常数，电阻等。

9. 发明申请

US20100294327A1 THERMOELECTRIC DEVICE USING RADIANT HEAT AS HEAT SOURCE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用辐射热作为热源的热电装置及其制造方法
公开(公告)号：US20100294327A1
公开(公告)日：2010-11-25
申请号：US12773226
申请日：2010-05-04
申请人： Young Sam PARK , Jung Wook Lim , Moon Gyu Jang
发明人： Young Sam PARK , Jung Wook Lim , Moon Gyu Jang
IPC分类号： H01L35/20 , H01L35/00 , H01L21/30 , H01L35/34
CPC分类号： H01L35/30 , H01L35/32
摘要： Provided are a thermoelectric device using radiant heat as a heat source and a method of fabricating the same. In the thermoelectric device, an anti-reflection layer formed on a heat absorption layer causes as much radiant light as possible to be absorbed by the heat absorption layer without being reflected to the outside so that the radiant heat absorption efficiency can be improved. Also, in the thermoelectric device, an insulating layer formed on a heat dissipation layer and a first reflection layer formed on the insulating layer can prevent external radiant heat from being absorbed by the heat dissipation layer, and as much radiant heat transferred to the heat dissipation layer as possible can be dissipated away from the heat dissipation layer by a second reflection layer thermally connected with the heat dissipation layer so that the radiant heat emission efficiency can be improved.
摘要翻译：提供了使用辐射热作为热源的热电装置及其制造方法。在热电装置中，形成在吸热层上的防反射层使得尽可能多的辐射光被吸收层吸收，而不会反射到外部，从而可以提高辐射吸收效率。此外，在热电装置中，形成在散热层上的绝缘层和形成在绝缘层上的第一反射层可以防止外部辐射热被散热层吸收，并且多少辐射热传递到散热层可以通过与散热层热连接的第二反射层从散热层消散，从而可以提高辐射热发射效率。

10. 发明申请

US20130074918A1 VACUUM WINDOW GLAZING INCLUDING SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：真空玻璃包括太阳能电池及其制造方法
公开(公告)号：US20130074918A1
公开(公告)日：2013-03-28
申请号：US13561226
申请日：2012-07-30
申请人： Jin Woo Jeong , Yoon Ho Song , Sung Youl Choi , Je Ha Kim , Jong Tae Moon , Jung Wook Lim , Hun Kyun Pak
发明人： Jin Woo Jeong , Yoon Ho Song , Sung Youl Choi , Je Ha Kim , Jong Tae Moon , Jung Wook Lim , Hun Kyun Pak
IPC分类号： H01L31/0232 , C03C27/06 , H01L31/0256 , H01L31/0296 , H01L31/0272 , B32B37/14 , H01L31/0264
CPC分类号： C03C27/06 , E06B3/6612 , H01L31/0488 , Y02B10/10 , Y02E10/50 , Y10T156/10
摘要： Disclosed are vacuum window glazing including a solar cell function and a manufacturing method thereof. The vacuum window glazing includes a first sheet glass, a second sheet glass that is vacuum-bonded to the first sheet glass; a vacuum layer that is formed between the first sheet glass and the second sheet glass; and a solar cell panel that is formed on a surface of the second sheet glass in a direction of the vacuum layer. By this configuration, power can be produced through the solar cell formed within the vacuum window glazing while more increasing the heat insulation effect of the vacuum window glazing, and the cooling and heating efficiency of the building can be greatly improved using the outer wall covered with glass.
摘要翻译：公开了包括太阳能电池功能的真空窗玻璃及其制造方法。真空窗玻璃包括第一平板玻璃，与第一平板玻璃真空接合的第二平板玻璃; 形成在所述第一平板玻璃和所述第二平板玻璃之间的真空层; 以及在真空层的方向上形成在第二平板玻璃的表面上的太阳能电池面板。通过这种构造，可以通过在真空窗玻璃中形成的太阳能电池产生电力，同时更加增加真空窗玻璃的隔热效果，并且可以使用覆盖有真空窗玻璃的外壁来大大提高建筑物的冷却和加热效率玻璃。

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