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1. 发明申请

US20120285532A1 TRANSPARENT COLOR SOLAR CELLS 审中-公开
标题翻译：透明颜色太阳能电池
公开(公告)号：US20120285532A1
公开(公告)日：2012-11-15
申请号：US13470255
申请日：2012-05-11
申请人： Sun Jin YUN , JungWook LIM , Yoo Jeong LEE
发明人： Sun Jin YUN , JungWook LIM , Yoo Jeong LEE
IPC分类号： H01L31/0248 , H01L31/0304 , H01L31/0296 , H01L31/0264 , H01L31/0272 , B82Y30/00
CPC分类号： B82Y30/00 , H01L31/02 , H01L31/035218 , H01L31/03921 , Y02E10/50
摘要： Provided is a transparent color solar cell, which includes a substrate, a first electrode layer disposed on the substrate, a transparent material layer including quantum dots having the same particle size, which absorb visible light provided from the sun through the first electrode layer and having a first wavelength region, and which selectively transmit visible light provided from the sun through the first electrode layer and having a second wavelength region, and a second electrode layer disposed on the transparent material layer.
摘要翻译：本发明提供一种透明色太阳能电池，其包括基板，设置在基板上的第一电极层，具有相同粒径的量子点的透明材料层，其吸收从太阳经由第一电极层提供的可见光，并具有第一波长区域，并且选择性地透射通过第一电极层从太阳提供并具有第二波长区域的可见光，以及设置在透明材料层上的第二电极层。

2. 发明申请

US20120097227A1 SOLAR CELLS 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20120097227A1
公开(公告)日：2012-04-26
申请号：US13182850
申请日：2011-07-14
申请人： JungWook LIM , Seong Hyun Lee , Sun Jin Yun
发明人： JungWook LIM , Seong Hyun Lee , Sun Jin Yun
IPC分类号： H01L31/075
CPC分类号： H01L31/074 , H01L31/02168 , H01L31/0328 , H01L31/075 , Y02E10/548
摘要： Provided is a solar cell. The solar cell includes: a light absorbing layer; a window layer consisting of a p-type copper oxynitride layer on the light absorbing layer; a rear electrode below the light absorbing layer; and a transparent electrode on the window layer.
摘要翻译：提供一个太阳能电池。太阳能电池包括：光吸收层; 由光吸收层上的p型氧氮化铜层构成的窗口层; 在光吸收层下面的后电极; 和窗口层上的透明电极。

3. 发明申请

US20110304403A1 Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit 审中-公开
标题翻译：基于金属 - 绝缘体转换器件的振荡电路及驱动振荡电路的方法
公开(公告)号：US20110304403A1
公开(公告)日：2011-12-15
申请号：US13137267
申请日：2011-08-02
申请人： Yong-wook Lee , Bongjun Kim , Sungyoul Choi , Jungwook Lim , Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , Gyungock Kim
发明人： Yong-wook Lee , Bongjun Kim , Sungyoul Choi , Jungwook Lim , Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , Gyungock Kim
IPC分类号： H03B7/14
CPC分类号： H01L49/003 , H01L29/94 , H03B17/00
摘要： Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.
摘要翻译：提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器，限制施加电流的最大量并向MIT装置施加直流恒定电压的电源，以及在MIT装置上照射电磁波的光源，其中通过使用光照射电磁波来产生振荡特性资源。

4. 发明授权

US08031021B2 Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit 失效
标题翻译：基于金属 - 绝缘体转换器件的振荡电路及驱动振荡电路的方法
公开(公告)号：US08031021B2
公开(公告)日：2011-10-04
申请号：US12516105
申请日：2007-10-31
申请人： Yong-Wook Lee , Bongjun Kim , Sungyoul Choi , Jungwook Lim , Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , Gyungock Kim
发明人： Yong-Wook Lee , Bongjun Kim , Sungyoul Choi , Jungwook Lim , Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , Gyungock Kim
IPC分类号： H03B11/00
CPC分类号： H01L49/003 , H01L29/94 , H03B17/00
摘要： Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.
摘要翻译：提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器，限制施加电流的最大量并向MIT装置施加直流恒定电压的电动电源以及在MIT装置上照射电磁波的光源，其中振荡特性是通过使用光源。

5. 发明申请

US20110092011A1 METHOD FOR ANTIREFLECTION TREATMENT OF A ZINC OXIDE FILM AND METHOD FOR MANUFACTURING SOLAR CELL USING THE SAME 有权
标题翻译：氧化锌膜的抗反应处理方法及其制造使用太阳能电池的方法
公开(公告)号：US20110092011A1
公开(公告)日：2011-04-21
申请号：US12909144
申请日：2010-10-21
申请人： Sun Jin YUN , Jaemin Lee , Jun Kwan Kim , JungWook Lim
发明人： Sun Jin YUN , Jaemin Lee , Jun Kwan Kim , JungWook Lim
IPC分类号： H01L31/18 , B05D3/10
CPC分类号： G02B1/118 , G02B1/12 , H01L31/022483 , H01L31/0236 , H01L31/02366 , Y02E10/50
摘要： Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.
摘要翻译：提供一种氧化锌膜的防反射处理方法和使用该氧化锌膜的太阳能电池的制造方法。在防反射处理中，制备基板，然后在基板上形成多晶氧化锌膜。多晶氧化锌膜的表面被纹理化。这里，多晶氧化锌膜的表面的粗糙化包括使用与硝酸和过氧化氢混合的蚀刻溶液湿法蚀刻基板上的多晶氧化锌膜。

6. 发明申请

US20110048493A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20110048493A1
公开(公告)日：2011-03-03
申请号：US12874114
申请日：2010-09-01
申请人： Sun Jin YUN , JungWook Lim , Je Ha Kim
发明人： Sun Jin YUN , JungWook Lim , Je Ha Kim
IPC分类号： H01L31/0216 , H01L31/042
CPC分类号： H01L31/02167 , H01L31/022425 , Y02E10/50
摘要： Provided is a solar cell. The solar cell includes a photovoltaic conversion device having first surface and the second surface on the opposite side, a first electrode connected to the first surface, a second electrode connected to the second surface, and an alkaline metal containing layer contacting one of the first and second electrodes.
摘要翻译：提供一个太阳能电池。太阳能电池包括具有第一表面和相对侧的第二表面的光电转换装置，连接到第一表面的第一电极，连接到第二表面的第二电极和接触第一和第二表面之一的含碱金属的层第二电极。

7. 发明申请

US20100180941A1 ANTIREFLECTION FILM OF SOLAR CELL, SOLAR CELL, AND METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：太阳能电池，太阳能电池的抗反射膜及制造太阳能电池的方法
公开(公告)号：US20100180941A1
公开(公告)日：2010-07-22
申请号：US12506187
申请日：2009-07-20
申请人： JungWook Lim , Sun Jin Yun , Hyun Tak Kim
发明人： JungWook Lim , Sun Jin Yun , Hyun Tak Kim
IPC分类号： H01L31/0232 , H01L31/00 , H01L31/18
CPC分类号： G02B1/115 , H01L31/02168 , Y02E10/52
摘要： Provided are an antireflection film of a solar cell, the solar cell, and a method of manufacturing the solar cell. The antireflection film of a solar cell includes a low dielectric film formed of a material having a first dielectric constant; a high dielectric film formed of a material having a second dielectric constant higher than the first dielectric constant; and a gradient layer disposed between the low dielectric film and the high dielectric film, and formed so as to gradually increase a dielectric constant from the first dielectric constant to the second dielectric constant. According to the present invention, light absorption efficiency of a solar cell can be increased.
摘要翻译：提供太阳能电池的防反射膜，太阳能电池以及制造太阳能电池的方法。太阳能电池的防反射膜包括由具有第一介电常数的材料形成的低电介质膜; 由具有高于第一介电常数的第二介电常数的材料形成的高电介质膜; 以及设置在低电介质膜和高电介质膜之间的梯度层，并且形成为使介电常数从第一介电常数逐渐增大到第二介电常数。根据本发明，能够提高太阳能电池的光吸收效率。

8. 发明申请

US20100085126A1 OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT 失效
标题翻译：振荡电路包括麻省电器和调节振荡电路的振荡频率的方法
公开(公告)号：US20100085126A1
公开(公告)日：2010-04-08
申请号：US12531058
申请日：2008-03-05
申请人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
发明人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
IPC分类号： H03B1/00
CPC分类号： H01L49/003 , H03B9/12
摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
摘要翻译：提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压或电流到MIT设备。根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

9. 发明申请

US20080197916A1 Low-Voltage Noise Preventing Circuit Using Abrupt Metal-Insulator Transition Device 失效
标题翻译：使用突发金属绝缘体转换器件的低压噪声防护电路
公开(公告)号：US20080197916A1
公开(公告)日：2008-08-21
申请号：US11908837
申请日：2006-03-07
申请人： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
发明人： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
IPC分类号： H03K5/00 , H01L27/00
CPC分类号： H01L49/003
摘要： Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
摘要翻译：提供一种使用突变金属 - 绝缘体转变（MIT）器件的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。因此，可以有效地消除低电压噪声。

10. 发明授权

US5500389A Process for formation for hetero junction structured film utilizing V grooves 失效
标题翻译：利用V沟槽形成异质结结构薄膜的工艺
公开(公告)号：US5500389A
公开(公告)日：1996-03-19
申请号：US342031
申请日：1994-11-17
申请人： Seung-Chang Lee , Sun-Jin Yun , Bo-Woo Kim , Sang-Won Kang
发明人： Seung-Chang Lee , Sun-Jin Yun , Bo-Woo Kim , Sang-Won Kang
IPC分类号： B82Y10/00 , B82Y40/00 , H01L21/20 , H01L21/203
CPC分类号： H01L33/025 , H01L21/0243 , H01L21/02532 , H01L21/02639 , H01L33/002 , Y10S438/938
摘要： A process for formation of a hetero junction structured film utilizing V grooves is disclosed. A monocrystalline film 1 is etched into V grooves, and thereupon, a hetero film 2 having misfits is grown, so that dislocations would be intensively distributed within the V grooves. Then, an oxide layer 3 is formed thereupon, and then, the portions of the oxide layer 3 and the hereto film 2 corresponding to the V grooves are removed by carrying out an etching. Then, the residue oxide layer is removed, thereby forming a non-stress non-dislocation hetero junction structure. Further, the following steps can be added. That is, on the above structure, a thin oxide layer 3 is deposited by carrying out a thermal oxidation or a chemical deposition, and then, a polycrystalline silicon film 4 is deposited. Then the surface irregularities are smoothened by carrying out a selective grinding. Or the following steps may be added. That is, the V groove portions of the hetero film 2 and the monocrystalline film 1 are filled with a monocrystalline film, and the residue oxide layer 3 is removed. Thus a hetero junction film can be grown in which the stress effect is minimized, and the dislocation concentration is made to be extremely low.
摘要翻译：公开了一种利用V沟形成异质结结构薄膜的方法。将单晶膜1蚀刻成V槽，随后生长出错位的异质膜2，使位错集中分布在V槽内。然后，在其上形成氧化物层3，然后通过进行蚀刻来去除与V槽对应的氧化物层3和本膜2的部分。然后，除去残留氧化物层，从而形成非应力非位错异质结结构。此外，可以添加以下步骤。也就是说，在上述结构中，通过进行热氧化或化学沉积来沉积薄的氧化物层3，然后沉积多晶硅膜4。然后通过进行选择性研磨使表面凹凸平滑。或者可以添加以下步骤。也就是说，异质膜2和单晶膜1的V槽部分填充有单晶膜，并且去除残余氧化物层3。因此，可以生长应力效应最小化的异质结膜，并使位错浓度极低。

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