专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130076382A1 Apparatus and Method for Measurement of Radiation Intensity for Testing Reliability of Solar Cell, and Method for Testing Reliability of Solar Cell 有权
标题翻译：用于测试太阳能电池可靠性的辐射强度测量装置和方法，以及太阳能电池可靠性测试方法
公开(公告)号：US20130076382A1
公开(公告)日：2013-03-28
申请号：US13566259
申请日：2012-08-03
申请人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
发明人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
IPC分类号： G01R31/26
CPC分类号： G01R31/2605 , G01R31/2642 , H02S50/10
摘要： An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.
摘要翻译：用于测量太阳能电池的可靠性的辐射强度的装置和方法，以及用于测试太阳能电池的可靠性的方法。该装置包括：第一太阳能电池，其接收预定强度的辐射或更多以发电;第二太阳能电池，其接收预定强度的辐射或更多以发电; 感测第二太阳能电池的温度的温度传感器; 冷却第一太阳能电池的冷却器; 以及控制器，其测量施加到所述第一太阳能电池的辐射强度，以及控制所述冷却器，以根据由所述温度传感器感测的所述第二太阳能电池的温度来防止所述第一太阳能电池的温度升高到高于预定温度。

2. 发明授权

US06787441B1 Method for pretreating a polymer substrate using an ion beam for subsequent deposition of indium oxide or indium tin oxide 失效
标题翻译：使用离子束预处理聚合物衬底以后续沉积氧化铟或氧化铟锡的方法
公开(公告)号：US06787441B1
公开(公告)日：2004-09-07
申请号：US10182986
申请日：2002-11-13
申请人： Seok-Keun Koh , Young-Whoan Beag , Jun-Sik Cho , Young-Gun Han
发明人： Seok-Keun Koh , Young-Whoan Beag , Jun-Sik Cho , Young-Gun Han
IPC分类号： H01L2144
CPC分类号： C23C14/022 , C23C14/086 , C23C14/22
摘要： A method of depositing indium oxide or indium tin oxide thin film on a polymer substrate is disclosed. In the method, oxygen or argon ion beam is radiated on a polymer substrate by a constant accelerating energy in a vacuum state to modify the surface of the polymer substrate, on which an IO thin film or an ITO thin film is deposited while oxygen ion beam, argon ion beam or their mixture ion beam is being radiated in a vacuum state. In addition, ion beam is generated from a cold cathode ion source by using argon, oxygen or their mixture gas and sputtered at a target substance composed of In2O3 or In2O3 and SnO2, thereby an IO or an ITO thin film can be deposited on the surface-modified polymer substrate.
摘要翻译：公开了一种在聚合物基底上沉积氧化铟或氧化铟锡薄膜的方法。在该方法中，氧气或氩离子束在真空状态下通过恒定的加速能量辐射在聚合物衬底上，以改变聚合物衬底的表面，其上沉积有IO薄膜或ITO薄膜，而氧离子束氩离子束或其混合离子束在真空状态下被辐射。此外，通过使用氩，氧或它们的混合气体从冷阴极离子源产生离子束并溅射在由In 2 O 3或In 2 O 3和SnO 2组成的目标物质上，从而可以在表面上沉积IO或ITO薄膜改性聚合物基材。

3. 发明授权

US5783641A Process for modifying surfaces of polymers, and polymers having surfaces modified by such process 失效
标题翻译：用于改性聚合物表面的方法和具有通过这种方法修饰的表面的聚合物
公开(公告)号：US5783641A
公开(公告)日：1998-07-21
申请号：US608054
申请日：1996-02-28
申请人： Seok-Keun Koh , Hyung-Jin Jung , Seok-Kyun Song , Won-Kook Choi , Young-Soo Yoon , Jun-Sik Cho
发明人： Seok-Keun Koh , Hyung-Jin Jung , Seok-Kyun Song , Won-Kook Choi , Young-Soo Yoon , Jun-Sik Cho
IPC分类号： C08J7/00 , B29C35/08 , B29C59/16 , C03B29/00 , C04B41/00 , C04B41/80 , C04B41/87 , C08J7/12 , C23C8/02 , C23C8/06 , C23C8/10 , C23C8/20 , C23C8/24 , C23C8/28 , C23C8/36 , C23C10/02 , C23C14/48 , C23C16/02 , D06P5/20 , H01L21/265 , C08K8/00
CPC分类号： C04B41/009 , B29C59/16 , C04B41/0027 , C04B41/80 , C08J7/12 , C23C10/02 , C23C8/02 , C23C8/10 , C23C8/20 , C23C8/24 , D06P5/20 , B29C2035/0872
摘要： The present invention relates to a process for modifying a polymer surface by irradiating ion particles with energy on a polymer surface, while blowing the reactive gas directly on the polymer surface under vacuum condition, to decrease the wetting angle of the polymer surface. The process for modifying the polymer surface according to the present invention can be widely used in the application fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the polymer surface.
摘要翻译：本发明涉及通过在聚合物表面上将能量照射到聚合物表面上的离子粒子，同时在真空条件下将反应性气体直接吹到聚合物表面上来降低聚合物表面的润湿角度来改性聚合物表面的方法。根据本发明的改性聚合物表面的方法可以广泛用于聚合物的应用领域，因为它提供了增加水性染料的铺展性，增加与其它材料的粘合强度和通过降低润湿角抑制光散射的效果的聚合物表面。

4. 发明授权

US09159865B2 Method of forming zinc oxide prominence and depression structure and method of manufacturing solar cell using thereof 有权
标题翻译：形成氧化锌突出和凹陷结构的方法及其制造太阳能电池的方法
公开(公告)号：US09159865B2
公开(公告)日：2015-10-13
申请号：US14118529
申请日：2012-08-14
申请人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
发明人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0236 , H01L51/42 , H01G9/20 , H01L51/44
CPC分类号： H01L31/1828 , H01G9/204 , H01G9/2059 , H01G9/209 , H01L31/02366 , H01L31/1888 , H01L51/42 , H01L51/4233 , H01L51/447 , Y02E10/542 , Y02E10/549
摘要： A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching.The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.
摘要翻译：一种在湿式蚀刻方法中在氧化锌薄膜上形成纳米级突出和凹陷结构的方法，该方法包括以下步骤：制备基底; 形成具有纳米范围的高度和宽度的纳米结构; 在其上形成纳米结构的基板上形成氧化锌薄膜; 并且湿式蚀刻氧化锌薄膜，其中在湿蚀刻步骤中，由于氧化锌位于纳米结构上，因此优先蚀刻具有相对较低物理致密度的氧化锌，因此在其周围形成突出和凹陷结构通过蚀刻的纳米结构。该方法的有效之处在于可以在突出和凹陷结构上均匀地形成薄膜，并且电解质或有机材料可以均匀地渗透在突出和凹陷结构之间。

5. 发明授权

US07309405B2 Method of forming ITO film 失效
标题翻译： ITO膜形成方法
公开(公告)号：US07309405B2
公开(公告)日：2007-12-18
申请号：US10751972
申请日：2004-01-07
申请人： Jun-Sik Cho , Young-Gun Han , Young-Whoan Beag , Seok-Keun Koh
发明人： Jun-Sik Cho , Young-Gun Han , Young-Whoan Beag , Seok-Keun Koh
IPC分类号： C23C14/35
CPC分类号： C23C14/3492 , C23C14/086 , C23C14/46 , H01L51/0021 , H01L2251/308
摘要： Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.
摘要翻译：公开了通过优化具有不同溅射工艺条件的溅射工艺条件的种子和体层的顺序溅射沉积来形成ITO膜的方法，其适用于各种显示装置，更具体地说，涉及需要超平面化表面的有机发光装置粗糙度在透明基板上形成透明导电电极的ITO膜包括种子层和体层之后，形成ITO膜的方法包括：第一溅射沉积步骤，用溅射法在衬底上形成ITO膜以在衬底附近流动的氧的气氛供给到离子源的气体以及仅供给到离子源的溅射气体形成ITO膜的第二溅射沉积步骤，其中第一和第二溅射沉积步骤具有不同的工艺条件，并且其中种子和体层通过第一或第二溅射沉积步骤沉积。

6. 发明申请

US20140083501A1 TRANSPARENT CONDUCTING FILM HAVING DOUBLE STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有双重结构的透明导电膜及其制造方法
公开(公告)号：US20140083501A1
公开(公告)日：2014-03-27
申请号：US14118522
申请日：2012-08-14
申请人： Jun-Sik Cho , Sang-Hyun Park , Jae-Ho Yun , Joo-Hyung Park , Kee-Shik Shin , Jin-Su Yoo , Kyung-Hoon Yoon
发明人： Jun-Sik Cho , Sang-Hyun Park , Jae-Ho Yun , Joo-Hyung Park , Kee-Shik Shin , Jin-Su Yoo , Kyung-Hoon Yoon
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/022466 , H01L31/022483 , H01L31/02327 , H01L31/1888 , Y02E10/50
摘要： Disclosed is a double-structure transparent conducting film having both excellent electrical characteristics and excellent light trapping performance, and a method of manufacturing the same.The double-structure transparent conducting film, which is used as a front antireflection film, a front electrode or a rear reflective film of a solar cell, includes: a light transmitting layer; and a light trapping layer whose one side is in contact with the light transmitting layer and whose other side is provided thereon with a surface textured structure; wherein the relationship of electrical conductivity A of the light transmitting layer and electrical conductivity a of the light trapping layer is A>a, and the relationship of etchability of the light transmitting layer and etchability of the light trapping layer is B
摘要翻译：公开了具有优异的电特性和优异的光捕获性能的双重结构的透明导电膜及其制造方法。用作太阳能电池的正面抗反射膜，前电极或后反射膜的双结构透明导电膜包括：透光层; 以及其一侧与透光层接触并且其另一侧设置有表面纹理结构的光捕获层; 其中透光层的电导率A和光捕获层的电导率a之间的关系为A> a，透光层的蚀刻性与光捕获层的蚀刻性之间的关系为B

7. 发明授权

US08896337B2 Apparatus and method for measurement of radiation intensity for testing reliability of solar cell, and method for testing reliability of solar cell 有权
标题翻译：用于测量太阳能电池可靠性的辐射强度的装置和方法，以及用于测试太阳能电池可靠性的方法
公开(公告)号：US08896337B2
公开(公告)日：2014-11-25
申请号：US13566259
申请日：2012-08-03
申请人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
发明人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
IPC分类号： G01R31/26
CPC分类号： G01R31/2605 , G01R31/2642 , H02S50/10
摘要： An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.
摘要翻译：用于测量太阳能电池的可靠性的辐射强度的装置和方法，以及用于测试太阳能电池的可靠性的方法。该装置包括：第一太阳能电池，其接收预定强度的辐射或更多以发电;第二太阳能电池，其接收预定强度的辐射或更多以发电; 感测第二太阳能电池的温度的温度传感器; 冷却第一太阳能电池的冷却器; 以及控制器，其测量施加到第一太阳能电池的辐射强度，并且根据由温度传感器感测到的第二太阳能电池的温度来控制冷却器以防止第一太阳能电池的温度升高到高于预定温度。

8. 发明申请

US20140065760A1 METHOD OF FORMING ZINC OXIDE PROMINENCE AND DEPRESSION STRUCTURE AND METHOD OF MANUFACTURING SOLAR CELL USING THEREOF 有权
标题翻译：形成氧化锌活性和沉积结构的方法及其制备使用其的太阳能电池的方法
公开(公告)号：US20140065760A1
公开(公告)日：2014-03-06
申请号：US14118529
申请日：2012-08-14
申请人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
发明人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
IPC分类号： H01L31/18 , H01L51/42
CPC分类号： H01L31/1828 , H01G9/204 , H01G9/2059 , H01G9/209 , H01L31/02366 , H01L31/1888 , H01L51/42 , H01L51/4233 , H01L51/447 , Y02E10/542 , Y02E10/549
摘要： A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching.The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.
摘要翻译：一种在湿式蚀刻方法中在氧化锌薄膜上形成纳米级突出和凹陷结构的方法，该方法包括以下步骤：制备基底; 形成具有纳米范围的高度和宽度的纳米结构; 在其上形成纳米结构的基板上形成氧化锌薄膜; 并且湿式蚀刻氧化锌薄膜，其中在湿蚀刻步骤中，由于氧化锌位于纳米结构上，因此优先蚀刻具有相对较低物理致密度的氧化锌，因此在其周围形成突出和凹陷结构通过蚀刻的纳米结构。该方法的有效之处在于可以在突出和凹陷结构上均匀地形成薄膜，并且电解质或有机材料可以均匀地渗透在突出和凹陷结构之间。

9. 发明申请

US20080254219A1 Method And Device For Preparing Powder On Which Nano Metal, Alloy, And Ceramic Particles Are Uniformly Vacuum-Deposited 审中-公开
标题翻译：制备纳米金属，合金和陶瓷颗粒均匀真空沉积的粉末的方法和装置
公开(公告)号：US20080254219A1
公开(公告)日：2008-10-16
申请号：US12067901
申请日：2006-10-16
申请人： Seok Keun Koh , Young Whoan Beag , Jun Sik Cho , Jae Ho Joo , Young Gun Han , Jung Hwan Lee , Un Jung Yo
发明人： Seok Keun Koh , Young Whoan Beag , Jun Sik Cho , Jae Ho Joo , Young Gun Han , Jung Hwan Lee , Un Jung Yo
IPC分类号： C23C16/44
CPC分类号： B22F9/14 , B01J21/08 , B01J23/06 , B01J23/10 , B01J23/22 , B01J23/30 , B01J23/34 , B01J23/42 , B01J23/44 , B01J23/462 , B01J23/52 , B01J23/755 , B01J35/0013 , B01J37/0221 , B22F1/0018 , B22F2998/00 , B22F2998/10 , B82Y30/00 , C02F1/281 , C02F1/283 , C02F1/288 , C02F1/50 , C04B35/6281 , C04B35/62815 , C04B35/62842 , C04B35/62884 , C04B35/62892 , C04B2235/3217 , C04B2235/3232 , C04B2235/3244 , C04B2235/3272 , C04B2235/3418 , C23C14/223 , C23C16/4417 , B22F2201/11 , B22F2201/20 , B22F1/007 , B22F2202/01
摘要： The present invention relates to a method and device for preparing powder by depositing nano metal, alloy, ceramic particles that are excellent in size uniformity, on a surface of the powder that is a base, using a vacuum deposition method. In particular, the present invention provides a method and device for preparing the powder on which the nano metal, alloy, and ceramic particles of a very uniform size are deposited, by simultaneously performing deposition and agitation using an effective agitation means for solving a disadvantage of a conventional method where deposition and agitation are separately performed. Also, the present invention provides a method and device for preparing the powder on which nano particles are deposited, in which a nano characteristic is kept by preventing a coalescence phenomenon of nano particles even when a deposition time for increasing contents of the nano particles increases in their preparation.
摘要翻译：本发明涉及一种使用真空沉积法在基体粉末的表面上沉积尺寸均匀性优良的纳米金属，合金，陶瓷颗粒来制备粉末的方法和装置。特别地，本发明提供了一种制备粉末的方法和装置，其上沉积了非常均匀尺寸的纳米金属，合金和陶瓷颗粒，通过使用有效的搅拌装置同时进行沉积和搅拌来解决缺点分别进行沉积和搅拌的常规方法。此外，本发明提供一种制备其上沉积有纳米颗粒的粉末的方法和装置，其中通过防止纳米颗粒的聚结现象即使在增加纳米颗粒的含量的沉积时间增加时也保持纳米特性他们的准备。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式