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    • 2. 发明授权
    • Method of forming ITO film
    • ITO膜形成方法
    • US07309405B2
    • 2007-12-18
    • US10751972
    • 2004-01-07
    • Jun-Sik ChoYoung-Gun HanYoung-Whoan BeagSeok-Keun Koh
    • Jun-Sik ChoYoung-Gun HanYoung-Whoan BeagSeok-Keun Koh
    • C23C14/35
    • C23C14/3492C23C14/086C23C14/46H01L51/0021H01L2251/308
    • Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.
    • 公开了通过优化具有不同溅射工艺条件的溅射工艺条件的种子和体层的顺序溅射沉积来形成ITO膜的方法,其适用于各种显示装置,更具体地说,涉及需要超平面化表面的有机发光装置 粗糙度 在透明基板上形成透明导电电极的ITO膜包括种子层和体层之后,形成ITO膜的方法包括:第一溅射沉积步骤,用溅射法在衬底上形成ITO膜 以在衬底附近流动的氧的气氛供给到离子源的气体以及仅供给到离子源的溅射气体形成ITO膜的第二溅射沉积步骤,其中第一和第二溅射沉积步骤具有不同的 工艺条件,并且其中种子和体层通过第一或第二溅射沉积步骤沉积。