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1. 发明申请

US20130076382A1 Apparatus and Method for Measurement of Radiation Intensity for Testing Reliability of Solar Cell, and Method for Testing Reliability of Solar Cell 有权
标题翻译：用于测试太阳能电池可靠性的辐射强度测量装置和方法，以及太阳能电池可靠性测试方法
公开(公告)号：US20130076382A1
公开(公告)日：2013-03-28
申请号：US13566259
申请日：2012-08-03
申请人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
发明人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
IPC分类号： G01R31/26
CPC分类号： G01R31/2605 , G01R31/2642 , H02S50/10
摘要： An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.
摘要翻译：用于测量太阳能电池的可靠性的辐射强度的装置和方法，以及用于测试太阳能电池的可靠性的方法。该装置包括：第一太阳能电池，其接收预定强度的辐射或更多以发电;第二太阳能电池，其接收预定强度的辐射或更多以发电; 感测第二太阳能电池的温度的温度传感器; 冷却第一太阳能电池的冷却器; 以及控制器，其测量施加到所述第一太阳能电池的辐射强度，以及控制所述冷却器，以根据由所述温度传感器感测的所述第二太阳能电池的温度来防止所述第一太阳能电池的温度升高到高于预定温度。

2. 发明授权

US08896337B2 Apparatus and method for measurement of radiation intensity for testing reliability of solar cell, and method for testing reliability of solar cell 有权
标题翻译：用于测量太阳能电池可靠性的辐射强度的装置和方法，以及用于测试太阳能电池可靠性的方法
公开(公告)号：US08896337B2
公开(公告)日：2014-11-25
申请号：US13566259
申请日：2012-08-03
申请人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
发明人： Sang-Hyun Park , Jihye Gwak , Sejin Ahn , Kyung-Hoon Yoon , Kee-Shik Shin , SeoungKyu Ahn , Ara Cho , Jae-Ho Yun , Jun-Sik Cho , Jin-Su Yoo , Joo-Hyung Park , Young-Joo Eo
IPC分类号： G01R31/26
CPC分类号： G01R31/2605 , G01R31/2642 , H02S50/10
摘要： An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.
摘要翻译：用于测量太阳能电池的可靠性的辐射强度的装置和方法，以及用于测试太阳能电池的可靠性的方法。该装置包括：第一太阳能电池，其接收预定强度的辐射或更多以发电;第二太阳能电池，其接收预定强度的辐射或更多以发电; 感测第二太阳能电池的温度的温度传感器; 冷却第一太阳能电池的冷却器; 以及控制器，其测量施加到第一太阳能电池的辐射强度，并且根据由温度传感器感测到的第二太阳能电池的温度来控制冷却器以防止第一太阳能电池的温度升高到高于预定温度。

3. 发明申请

US20140065760A1 METHOD OF FORMING ZINC OXIDE PROMINENCE AND DEPRESSION STRUCTURE AND METHOD OF MANUFACTURING SOLAR CELL USING THEREOF 有权
标题翻译：形成氧化锌活性和沉积结构的方法及其制备使用其的太阳能电池的方法
公开(公告)号：US20140065760A1
公开(公告)日：2014-03-06
申请号：US14118529
申请日：2012-08-14
申请人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
发明人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
IPC分类号： H01L31/18 , H01L51/42
CPC分类号： H01L31/1828 , H01G9/204 , H01G9/2059 , H01G9/209 , H01L31/02366 , H01L31/1888 , H01L51/42 , H01L51/4233 , H01L51/447 , Y02E10/542 , Y02E10/549
摘要： A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching.The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.
摘要翻译：一种在湿式蚀刻方法中在氧化锌薄膜上形成纳米级突出和凹陷结构的方法，该方法包括以下步骤：制备基底; 形成具有纳米范围的高度和宽度的纳米结构; 在其上形成纳米结构的基板上形成氧化锌薄膜; 并且湿式蚀刻氧化锌薄膜，其中在湿蚀刻步骤中，由于氧化锌位于纳米结构上，因此优先蚀刻具有相对较低物理致密度的氧化锌，因此在其周围形成突出和凹陷结构通过蚀刻的纳米结构。该方法的有效之处在于可以在突出和凹陷结构上均匀地形成薄膜，并且电解质或有机材料可以均匀地渗透在突出和凹陷结构之间。

4. 发明授权

US09159865B2 Method of forming zinc oxide prominence and depression structure and method of manufacturing solar cell using thereof 有权
标题翻译：形成氧化锌突出和凹陷结构的方法及其制造太阳能电池的方法
公开(公告)号：US09159865B2
公开(公告)日：2015-10-13
申请号：US14118529
申请日：2012-08-14
申请人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
发明人： Jun-Sik Cho , Kyung-Hoon Yoon , SeJin Ahn , Jihye Gwak , Jae-Ho Yun , Ara Cho , Kee-Shik Shin , SeoungKyu Ahn , Young-Joo Eo , Jin-Su Yoo , Sang-Hyun Park , Joo-Hyung Park
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0236 , H01L51/42 , H01G9/20 , H01L51/44
CPC分类号： H01L31/1828 , H01G9/204 , H01G9/2059 , H01G9/209 , H01L31/02366 , H01L31/1888 , H01L51/42 , H01L51/4233 , H01L51/447 , Y02E10/542 , Y02E10/549
摘要： A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching.The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.
摘要翻译：一种在湿式蚀刻方法中在氧化锌薄膜上形成纳米级突出和凹陷结构的方法，该方法包括以下步骤：制备基底; 形成具有纳米范围的高度和宽度的纳米结构; 在其上形成纳米结构的基板上形成氧化锌薄膜; 并且湿式蚀刻氧化锌薄膜，其中在湿蚀刻步骤中，由于氧化锌位于纳米结构上，因此优先蚀刻具有相对较低物理致密度的氧化锌，因此在其周围形成突出和凹陷结构通过蚀刻的纳米结构。该方法的有效之处在于可以在突出和凹陷结构上均匀地形成薄膜，并且电解质或有机材料可以均匀地渗透在突出和凹陷结构之间。

5. 发明授权

US09496449B2 Method for manufacturing CI(G)S-based thin film comprising Cu-Se thin film using Cu-Se two-component nanoparticle flux, and CI(G)S-based thin film manufactured by the method 有权
标题翻译：使用Cu-Se双组分纳米颗粒助熔剂制造包含Cu-Se薄膜的CI（G）S基薄膜的方法和通过该方法制造的CI（G）S基薄膜
公开(公告)号：US09496449B2
公开(公告)日：2016-11-15
申请号：US14232829
申请日：2012-07-17
申请人： Ara Cho , SeJin Ahn , Kyung-Hoon Yoon , Jae-Ho Yun , Jihye Gwak , Kee-Shik Shin , SeoungKyu Ahn
发明人： Ara Cho , SeJin Ahn , Kyung-Hoon Yoon , Jae-Ho Yun , Jihye Gwak , Kee-Shik Shin , SeoungKyu Ahn
IPC分类号： H01L31/18 , H01L31/0749 , H01L21/02 , H01L31/032 , H01L31/0352
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/035218 , H01L31/0749 , Y02E10/541
摘要： A method for manufacturing a CI(G)S-based thin film using a Cu—Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu—Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu—Se two-component nanoparticles by mixing the Cu—Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu—Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.
摘要翻译：提供了使用Cu-Se双组分纳米颗粒助熔剂制造CI（G）S基薄膜的方法和通过该方法制造的CI（G）S基薄膜。根据本发明的制备CI（G）S基薄膜的方法包括以下步骤：制备Cu-Se双组分纳米颗粒和In纳米颗粒; 通过混合Cu-Se双组分纳米颗粒，溶剂和粘合剂制备包含Cu-Se双组分纳米颗粒的浆料，并通过混合In纳米颗粒，溶剂和粘合剂制备包含In纳米颗粒的浆料 ; 通过将包含Cu-Se双组分纳米颗粒的浆料和包含In纳米颗粒的浆料交替地涂覆在基材上，形成其中层叠多个层的薄膜，而不管其顺序如何; 并对形成的薄膜进行热处理。

6. 发明申请

US20140216552A1 Method for Manufacturing CI(G)S-Based Thin Film Comprising CU-SE Thin Film Using CU-SE Two-Component Nanoparticle Flux, and CI(G)S-Based Thin Film Manufactured by the Method 有权
标题翻译：使用CU-SE双组分纳米颗粒助熔剂和CI（G）S型薄膜制造包含CU-SE薄膜的CI（G）S基薄膜的方法
公开(公告)号：US20140216552A1
公开(公告)日：2014-08-07
申请号：US14232829
申请日：2012-07-17
申请人： Ara Cho , SeJin Ahn , Kyung-Hoon Yoon , Jae-Ho Yun , Jihye Gwak , Kee-Shik Shin , SeoungKyu Ahn
发明人： Ara Cho , SeJin Ahn , Kyung-Hoon Yoon , Jae-Ho Yun , Jihye Gwak , Kee-Shik Shin , SeoungKyu Ahn
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/035218 , H01L31/0749 , Y02E10/541
摘要： A method for manufacturing a CI(G)S-based thin film using a Cu—Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu—Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu—Se two-component nanoparticles by mixing the Cu—Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu—Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.
摘要翻译：提供了使用Cu-Se双组分纳米颗粒助熔剂制造CI（G）S基薄膜的方法和通过该方法制造的CI（G）S基薄膜。根据本发明的制备CI（G）S基薄膜的方法包括以下步骤：制备Cu-Se双组分纳米颗粒和In纳米颗粒; 通过混合Cu-Se双组分纳米颗粒，溶剂和粘合剂制备包含Cu-Se双组分纳米颗粒的浆料，并通过混合In纳米颗粒，溶剂和粘合剂制备包含In纳米颗粒的浆料 ; 通过将包含Cu-Se双组分纳米颗粒的浆料和包含In纳米颗粒的浆料交替地涂覆在基材上，形成其中层叠多个层的薄膜，而不管其顺序如何; 并对形成的薄膜进行热处理。

7. 发明授权

US08569102B2 Method of manufacturing high density CIS thin film for solar cell and method of manufacturing thin film solar cell using the same 有权
标题翻译：制造太阳能电池用高密度CIS薄膜的方法及使用其制造薄膜太阳能电池的方法
公开(公告)号：US08569102B2
公开(公告)日：2013-10-29
申请号：US13695627
申请日：2011-07-19
申请人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
发明人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
IPC分类号： H01L21/00 , C25D21/12 , C01B19/04
CPC分类号： H01L31/035209 , B82Y30/00 , C01B19/002 , C01G15/006 , C01P2004/03 , C01P2004/64 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
摘要翻译：公开了一种高密度CIS薄膜及其制造方法，其包括通过非真空涂覆将CIS纳米粉末，CIGS纳米粉末或CZTS纳米粉末涂覆在基材上，随后在填充有填充元素的纳米粉末之间的空腔进行热处理如铜，铟，镓，锌，锡等。将高密度CIS薄膜施加到薄膜太阳能电池的光吸收层，从而提供高效率的薄膜太阳能电池。

8. 发明申请

US20130045565A1 METHOD OF MANUFACTURING HIGH DENSITY CIS THIN FILM FOR SOLAR CELL AND METHOD OF MANUFACTURING THIN FILM SOLAR CELL USING THE SAME 有权
标题翻译：制造太阳能电池用高密度CIS薄膜的方法及其制造薄膜太阳能电池的方法
公开(公告)号：US20130045565A1
公开(公告)日：2013-02-21
申请号：US13695627
申请日：2011-07-19
申请人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
发明人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
IPC分类号： H01L31/18 , H01B1/02 , B82Y30/00
CPC分类号： H01L31/035209 , B82Y30/00 , C01B19/002 , C01G15/006 , C01P2004/03 , C01P2004/64 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
摘要翻译：公开了一种高密度CIS薄膜及其制造方法，其包括通过非真空涂覆将CIS纳米粉末，CIGS纳米粉末或CZTS纳米粉末涂覆在基材上，随后在填充有填充元素的纳米粉末之间的空腔进行热处理如铜，铟，镓，锌，锡等。将高密度CIS薄膜施加到薄膜太阳能电池的光吸收层，从而提供高效率的薄膜太阳能电池。

9. 发明授权

US09448917B2 System on chip and verification method thereof 有权
标题翻译：片上系统及其验证方法
公开(公告)号：US09448917B2
公开(公告)日：2016-09-20
申请号：US14680337
申请日：2015-04-07
申请人： Sung-Boem Park , Jin-Sung Park , Ara Cho
发明人： Sung-Boem Park , Jin-Sung Park , Ara Cho
IPC分类号： G06F11/36 , G06F9/44
CPC分类号： G06F9/3865 , G06F9/30145 , G06F11/3688
摘要： A verification method of a system on chip includes receiving a test generator and an exception handler; generating, by the test generator, a test program including an exception-causing instruction based on a test template; executing a first instruction at a first operating state as the test program is executed; stopping the execution of the test program and performing a fixed instruction sequence included in the exception handler when the exception-causing instruction is executed during the execution of the test program; and resuming the test program from a second instruction at a second operating state set after the fixed instruction sequence is performed, the second instruction corresponding to an address adjacent to an address of the exception-causing instruction.
摘要翻译：芯片上的系统的验证方法包括接收测试发生器和异常处理程序; 由测试发生器产生包括基于测试模板的异常指令的测试程序; 在执行测试程序时在第一操作状态下执行第一指令; 当在执行测试程序期间执行异常指令时，停止执行测试程序并执行包括在异常处理程序中的固定指令序列; 以及在执行所述固定指令序列之后设置的第二操作状态下从第二指令恢复所述测试程序，所述第二指令对应于与所述异常指令的地址相邻的地址。

10. 发明授权

US08506840B2 Composition having ring structure and terminal amine groups, and use thereof as flue gas absorbent 有权
标题翻译：具有环结构和末端胺基的组合物及其作为烟道气吸收剂的用途
公开(公告)号：US08506840B2
公开(公告)日：2013-08-13
申请号：US12933024
申请日：2009-04-02
申请人： Ara Cho , Jong Seop Lee , Byoung Moo Min
发明人： Ara Cho , Jong Seop Lee , Byoung Moo Min
IPC分类号： C09K3/00
CPC分类号： B01D53/78 , B01D53/1493
摘要： Disclosed is a flue gas absorbent composition which contains a compound and water. The compound has a ring structure and includes terminal primary amine groups and substituted α-carbon atoms neighboring the amine groups. Further, a use of a solution of a compound having a ring structure and terminal amine groups as a flue gas absorbent is disclosed. The absorbent composition includes a ring-structure compound having superior absorption ability when compared to conventional absorbents, thereby exhibiting excellent properties, i.e., flue gas absorption rate improved by 50 to 100% and flue gas absorption capacity improved by 200 to 400%, as compared with currently used absorbents such as monoethanolamine (MEA) and 2-amino-2-methyl-propanol (AMP).
摘要翻译：公开了含有化合物和水的烟道气吸收剂组合物。该化合物具有环结构，并且包括邻近胺基的末端伯胺基和取代的α-碳原子。此外，公开了使用具有环结构和末端胺基的化合物作为烟道气吸收剂的溶液。吸收组合物包含与常规吸收剂相比具有优异吸收能力的环状结构化合物，因此显示出优异的性能，即烟道吸收率提高50〜100％，烟道气吸收能力提高200〜400％，相比之下目前使用的吸附剂如单乙醇胺（MEA）和2-氨基-2-甲基 - 丙醇（AMP）。

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