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1. 发明授权

US08723260B1 Semiconductor radio frequency switch with body contact 有权
标题翻译：半导体射频开关与机身接触
公开(公告)号：US08723260B1
公开(公告)日：2014-05-13
申请号：US12723257
申请日：2010-03-12
申请人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
发明人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
IPC分类号： H01L21/00
CPC分类号： H01L21/84 , H01L21/743 , H01L27/1203 , H01L29/4238 , H01L29/7833
摘要： The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.
摘要翻译：本发明涉及射频（RF）开关，其包括串联耦合的多个体接触场效应晶体管（FET）元件。可以使用作为薄膜半导体管芯的一部分的薄膜半导体器件层来形成FET元件。通过薄膜半导体器件层和通过薄膜半导体晶片的衬底的FET元件之间的导通路径可以通过使用绝缘材料基本上消除。消除导通路径允许跨越RF开关的RF信号在串联耦合的FET元件之间被分开，使得每个FET元件仅受到RF信号的一部分的影响。此外，当RF开关处于OFF状态时，每个FET元件被体接触并且可以接收反向主体偏置，从而降低每个FET元件的截止状态漏极 - 源极电容。

2. 发明授权

US08680947B1 Passive multi-band duplexer 有权
标题翻译：被动多频双工器
公开(公告)号：US08680947B1
公开(公告)日：2014-03-25
申请号：US12843574
申请日：2010-07-26
申请人： Julio Costa , Joshua J. Caron , Todd Gillenwater
发明人： Julio Costa , Joshua J. Caron , Todd Gillenwater
IPC分类号： H03H7/01 , H03H9/46 , H01P1/20
CPC分类号： H01P1/213 , H03H7/465 , H03H9/706 , H03H9/725 , H03H2210/012 , H03H2210/025 , H03H2210/026 , H03H2210/033 , H03H2210/036 , H03H2250/00
摘要： The present disclosure relates to a passive multi-band duplexer having a first bandpass filter and a second bandpass filter. The first bandpass filter includes a first group of sub-band bandpass filters, a first switching circuit, and a first tunable LC bandpass filter. Similarly, the second bandpass filter includes a second group of sub-band bandpass filters, a second switching circuit, and a second tunable LC bandpass filter. A first band of the passive multi-band duplexer, such as a transmit band, is chosen by selecting one of the first group of sub-band bandpass filters and tuning the first tunable LC bandpass filter to the first band. Similarly, a second band of the passive multi-band duplexer, such as a receive band, is chosen by selecting one of the second group of sub-band bandpass filters and tuning the second tunable LC bandpass filter to the second band.
摘要翻译：本公开涉及具有第一带通滤波器和第二带通滤波器的无源多频双工器。第一带通滤波器包括第一组子带通滤波器，第一开关电路和第一可调谐LC带通滤波器。类似地，第二带通滤波器包括第二组子带通滤波器，第二开关电路和第二可调谐LC带通滤波器。通过选择第一组子带通滤波器之一并将第一可调谐LC带通滤波器调谐到第一频带来选择无源多频双工器的第一频带，例如发射频带。类似地，通过选择第二组子带通滤波器之一并将第二可调谐LC带通滤波器调谐到第二频带来选择诸如接收频带的无源多频双工器的第二频带。

3. 发明授权

US08164110B1 Integrated lateral high-voltage diode and thyristor 有权
标题翻译：集成横向高压二极管和晶闸管
公开(公告)号：US08164110B1
公开(公告)日：2012-04-24
申请号：US12949296
申请日：2010-11-18
申请人： Daniel Charles Kerr , David C. Dening , Julio Costa
发明人： Daniel Charles Kerr , David C. Dening , Julio Costa
IPC分类号： H01L29/74
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7833 , H01L29/861 , H03K3/352
摘要： The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.
摘要翻译：本发明涉及诸如横向高压二极管（LHVD）或横向高压晶闸管的横向高压器件与半导体晶片上的其它电路的集成，其可以使用低压铸造技术，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。可以通过在阳极和阴极之间使用本征材料来增加LHVD的反向击穿电压能力。类似地，在横向高压晶闸管（例如横向高压可硅可控整流器（LHV-SCR））中，可以通过在阳极和阴极之间使用本征材料来增加LHV-SCR的耐受电压能力。

4. 发明申请

US20110204478A1 INSULATOR LAYER BASED MEMS DEVICES 有权
标题翻译：基于绝缘体层的MEMS器件
公开(公告)号：US20110204478A1
公开(公告)日：2011-08-25
申请号：US13097989
申请日：2011-04-29
申请人： Sangchae Kim , Tony Ivanov , Julio Costa
发明人： Sangchae Kim , Tony Ivanov , Julio Costa
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： B81B7/02 , B81C1/0015 , H01L27/101 , H03H3/0072 , H03H9/02433 , H03H9/2405
摘要： The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.
摘要翻译：本发明涉及在半导体管芯的两个金属层之间使用绝缘体层来提供诸如欧姆MEMS开关或电容式MEMS开关的微机电系统（MEMS）器件。在欧姆MEMS开关中，绝缘体层可用于在制造过程中减少金属底切，以防止MEMS致动器对MEMS悬臂的电短路，或两者兼而有之。在电容MEMS开关中，绝缘体层可以用作由两个金属层提供的电容板之间的电容电介质。固定的电容元件可以由两个金属层之间的绝缘体层提供。在本发明的一个实施例中，欧姆MEMS开关，电容MEMS开关，固定电容元件或其任何组合可以集成到单个半导体管芯中。

5. 发明授权

US07999643B1 Providing a common environment for multiple MEMS devices 有权
标题翻译：为多个MEMS器件提供共同的环境
公开(公告)号：US07999643B1
公开(公告)日：2011-08-16
申请号：US12129928
申请日：2008-05-30
申请人： David C. Dening , Tony Ivanov , Julio Costa
发明人： David C. Dening , Tony Ivanov , Julio Costa
IPC分类号： H01H51/22
CPC分类号： H01H1/0036 , H01H1/66 , H01H59/0009 , Y10T307/747 , Y10T307/76
摘要： The present invention relates to providing a uniform operating environment for each of multiple devices by providing a common environment to the devices. The common environment is provided by multiple cavities, which are interconnected by at least one environmental pathway, which may be provided by at least one tunnel. The common environment may help provide uniform operating pressure, which may be a partial or near vacuum, a surrounding gas of uniform contents, such as an inert gas or mixture of inert gases, or both. The devices may include micro-electro-mechanical system (MEMS) devices, such as MEMS switches.
摘要翻译：本发明涉及通过向设备提供公共环境来为多个设备中的每一个提供统一的操作环境。共同的环境由多个空腔提供，多个空腔通过至少一个环境路径互连，其可由至少一个隧道提供。常见的环境可能有助于提供均匀的操作压力，其可以是均匀内容物的周围气体的部分或接近真空，例如惰性气体或惰性气体的混合物，或两者。这些装置可以包括诸如MEMS开关的微机电系统（MEMS）装置。

6. 发明授权

US07859009B1 Integrated lateral high-voltage diode and thyristor 有权
标题翻译：集成横向高压二极管和晶闸管
公开(公告)号：US07859009B1
公开(公告)日：2010-12-28
申请号：US12140504
申请日：2008-06-17
申请人： Daniel Charles Kerr , David C. Dening , Julio Costa
发明人： Daniel Charles Kerr , David C. Dening , Julio Costa
IPC分类号： H01L29/74
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7833 , H01L29/861 , H03K3/352
摘要： The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.
摘要翻译：本发明涉及诸如横向高压二极管（LHVD）或横向高压晶闸管的横向高压器件与半导体晶片上的其它电路的集成，其可以使用低压铸造技术，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。可以通过在阳极和阴极之间使用本征材料来增加LHVD的反向击穿电压能力。类似地，在横向高压晶闸管（例如横向高压可硅可控整流器（LHV-SCR））中，可以通过在阳极和阴极之间使用本征材料来增加LHV-SCR的耐受电压能力。

7. 发明授权

US07745892B1 Integrated MEMS switch 有权
标题翻译：集成MEMS开关
公开(公告)号：US07745892B1
公开(公告)日：2010-06-29
申请号：US11955918
申请日：2007-12-13
申请人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
发明人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/014 , H01H59/0009
摘要： The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.
摘要翻译：本发明提供一种MEMS开关，其形成在半导体器件的半导体衬底上，而不仅仅放置在其上。基本半导体衬底包括处理晶片，处理晶片上方的绝缘体层以及绝缘体层上方的器件层。器件层是其中可以形成诸如晶体管和二极管的有源半导体器件的器件层。在半导体器件的制造期间，MEMS开关形成在器件层上。在不脱离本发明的实质的情况下，可以在这些各层之间或之间插入附加层，例如连接层，钝化层和电介质层。因此，本发明避免了制造除了与MEMS开关相关联的电路的器件之外的MEMS开关以及随后将MEMS开关安装到该电路的模块的需要。

8. 发明授权

US06893947B2 Advanced RF enhancement-mode FETs with improved gate properties 有权
标题翻译：先进的RF增强型FET，具有改进的栅极性能
公开(公告)号：US06893947B2
公开(公告)日：2005-05-17
申请号：US10179769
申请日：2002-06-25
申请人： Marino J. Martinez , Ernest Schirmann , Olin L. Hartin , Colby G. Rampley , Mariam G. Sadaka , Charles E. Weitzel , Julio Costa
发明人： Marino J. Martinez , Ernest Schirmann , Olin L. Hartin , Colby G. Rampley , Mariam G. Sadaka , Charles E. Weitzel , Julio Costa
IPC分类号： H01L21/285 , H01L21/337 , H01L29/80 , H01L21/22
CPC分类号： H01L29/66924 , H01L21/28587 , H01L29/802
摘要： A method for fabricating an RF enhancement mode FET (30) having improved gate properties is provided. The method comprises the steps of providing (131) a substrate (31) having a stack of semiconductor layers (32-35) formed thereon, the stack including a cap layer (35) and a central layer (33) defining a device channel, forming (103) a photoresist pattern (58) over the cap layer, thereby defining a masked region and an unmasked region, and, in any order, (a) creating (105) an implant region (36, 37) in the unmasked region, and (b) removing (107) the cap layer from the unmasked region. By forming the implant region and cap region with no overlap, a device with low current leakage may be achieved.
摘要翻译：提供了一种制造具有改进的栅极特性的RF增强型FET（30）的方法。该方法包括以下步骤：提供（131）具有形成在其上的半导体层（32-35）的堆叠的衬底（31），所述堆叠包括限定器件沟道的覆盖层（35）和中心层（33）在所述盖层上形成（103）光致抗蚀剂图案（58），由此限定掩蔽区域和未掩蔽区域，并且以任何顺序，（a）在所述未掩蔽区域中产生（105）植入区域（36,37），和（b）从未掩蔽区域移除（107）盖层。通过不重叠地形成注入区域和盖子区域，可以实现具有低电流泄漏的装置。

9. 发明授权

US09892879B2 Encapsulated micro-electromechanical system switch and method of manufacturing the same 有权
公开(公告)号：US09892879B2
公开(公告)日：2018-02-13
申请号：US13348277
申请日：2012-01-11
申请人： Jonathan Hale Hammond , Julio Costa
发明人： Jonathan Hale Hammond , Julio Costa
IPC分类号： H01L29/84 , H01L21/02 , H01H49/00 , H01H1/00 , H01H59/00 , B81C1/00
CPC分类号： H01H49/00 , B81B2201/014 , B81C1/0023 , B81C2203/0145 , H01H1/0036 , H01H59/0009
摘要： Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches.

10. 发明申请

US20120218047A1 VERTICAL BALLAST TECHNOLOGY FOR POWER HBT DEVICE 有权
标题翻译：用于电力HBT器件的垂直压缩技术
公开(公告)号：US20120218047A1
公开(公告)日：2012-08-30
申请号：US13405481
申请日：2012-02-27
申请人： Julio Costa , Michael Carroll
发明人： Julio Costa , Michael Carroll
IPC分类号： H03F3/04 , H01L21/60
CPC分类号： H01L29/7325 , H01L23/66 , H01L29/0692 , H01L29/7371 , H01L2223/6644 , H01L2224/13022 , H01L2224/131 , H01L2224/13147 , H01L2224/16113 , H01L2224/16225 , H01L2224/16227 , H01L2924/01037 , H01L2924/1305 , H01L2924/014 , H01L2924/00
摘要： Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat.
摘要翻译：公开了具有垂直镇流器配置的功率放大器件，以防止形成在半导体衬底上的至少一个双极晶体管堆叠中的热失控。为了提供负反馈以防止双极晶体管中的热失控，导电层形成在堆叠上并耦合到堆叠。导电层的电阻率提供了防止双极晶体管中的热失控的有效电阻。导电层的垂直放置允许垂直散热，从而在不集中热的情况下提供压载。

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