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1. 发明授权

US08723260B1 Semiconductor radio frequency switch with body contact 有权
标题翻译：半导体射频开关与机身接触
公开(公告)号：US08723260B1
公开(公告)日：2014-05-13
申请号：US12723257
申请日：2010-03-12
申请人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
发明人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
IPC分类号： H01L21/00
CPC分类号： H01L21/84 , H01L21/743 , H01L27/1203 , H01L29/4238 , H01L29/7833
摘要： The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.
摘要翻译：本发明涉及射频（RF）开关，其包括串联耦合的多个体接触场效应晶体管（FET）元件。可以使用作为薄膜半导体管芯的一部分的薄膜半导体器件层来形成FET元件。通过薄膜半导体器件层和通过薄膜半导体晶片的衬底的FET元件之间的导通路径可以通过使用绝缘材料基本上消除。消除导通路径允许跨越RF开关的RF信号在串联耦合的FET元件之间被分开，使得每个FET元件仅受到RF信号的一部分的影响。此外，当RF开关处于OFF状态时，每个FET元件被体接触并且可以接收反向主体偏置，从而降低每个FET元件的截止状态漏极 - 源极电容。

2. 发明授权

US08718572B2 Reconfigurable RF switch die 失效
标题翻译：可重构RF开关管芯
公开(公告)号：US08718572B2
公开(公告)日：2014-05-06
申请号：US12961039
申请日：2010-12-06
申请人： Daniel Charles Kerr , Ali Tombak , Christian Rye Iversen
发明人： Daniel Charles Kerr , Ali Tombak , Christian Rye Iversen
IPC分类号： H04B1/44
CPC分类号： H04B1/48 , H01L2224/14 , H01L2224/16225 , H04B1/006 , Y10T307/76
摘要： A radio frequency (RF) switch die which includes an antenna port, a plurality of RF ports, a switch fabric for selectively coupling one or more of the RF ports to the antenna port, and control circuitry that is adapted to, in a first mode, direct the switch fabric to couple any one of the plurality of RF ports individually to the antenna port, and in a second mode, couple a selected group of the RF ports to the antenna port. The RF switch die may include M number of RF ports, and be relatively easily reconfigured to provide N number of RF ports, wherein N is less than M. Groups of RF ports may be coupled together to form coupled RF ports that offer different electrical characteristics than non-coupled RF ports.
摘要翻译：一种射频（RF）开关管芯，包括天线端口，多个RF端口，用于选择性地将一个或多个RF端口耦合到天线端口的开关结构，以及适于以第一模式引导交换结构将多个RF端口中的任何一个单独地耦合到天线端口，并且在第二模式中，将所选择的一组RF端口耦合到天线端口。 RF开关管芯可以包括M个RF端口，并且相对容易地重新配置以提供N个数量的RF端口，其中N小于M.RF端口组可以耦合在一起以形成提供不同电特性的耦合RF端口比非耦合RF端口。

3. 发明申请

US20120139363A1 RECONFIGURABLE RF SWITCH DIE 失效
标题翻译：可重新配置RF开关DIE
公开(公告)号：US20120139363A1
公开(公告)日：2012-06-07
申请号：US12961039
申请日：2010-12-06
申请人： Daniel Charles Kerr , Ali Tombak , Christian Rye Iversen
发明人： Daniel Charles Kerr , Ali Tombak , Christian Rye Iversen
IPC分类号： H02B1/00
CPC分类号： H04B1/48 , H01L2224/14 , H01L2224/16225 , H04B1/006 , Y10T307/76
摘要： A radio frequency (RF) switch die which includes an antenna port, a plurality of RF ports, a switch fabric for selectively coupling one or more of the RF ports to the antenna port, and control circuitry that is adapted to, in a first mode, direct the switch fabric to couple any one of the plurality of RF ports individually to the antenna port, and in a second mode, couple a selected group of the RF ports to the antenna port. The RF switch die may include M number of RF ports, and be relatively easily reconfigured to provide N number of RF ports, wherein N is less than M. Groups of RF ports may be coupled together to form coupled RF ports that offer different electrical characteristics than non-coupled RF ports.
摘要翻译：一种射频（RF）开关管芯，包括天线端口，多个RF端口，用于选择性地将一个或多个RF端口耦合到天线端口的开关结构，以及适于以第一模式引导交换结构将多个RF端口中的任何一个单独地耦合到天线端口，并且在第二模式中，将所选择的一组RF端口耦合到天线端口。 RF开关管芯可以包括M个RF端口，并且相对容易地重新配置以提供N个数量的RF端口，其中N小于M.RF端口组可以耦合在一起以形成提供不同电特性的耦合RF端口比非耦合RF端口。

4. 发明授权

US09356144B1 Remote gate protection diode for field effect transistors 有权
标题翻译：用于场效应晶体管的远程栅极保护二极管
公开(公告)号：US09356144B1
公开(公告)日：2016-05-31
申请号：US12854563
申请日：2010-08-11
申请人： Philip Mason , Daniel Charles Kerr , Michael Carroll
发明人： Philip Mason , Daniel Charles Kerr , Michael Carroll
IPC分类号： H01L23/62 , H01L29/78
CPC分类号： H01L29/7841 , H01L27/0255
摘要： The present disclosure relates to gate oxide protection circuits, which are used to protect the gate oxides of field effect transistor (FET) elements from over voltage conditions, particularly during situations in which the gate oxides are particularly vulnerable, such as during certain manufacturing stages. Each gate oxide protection circuit may be coupled to a corresponding FET element through corresponding first and second resistive elements, which are coupled to a corresponding gate connection node and a corresponding first connection node, respectively, of the FET element. The gate connection node and the first connection node are electrically adjacent to opposite sides of the gate oxide of the FET element. Each gate oxide protection circuit may protect its corresponding FET element by limiting a voltage between the gate connection node and the first connection node.
摘要翻译：本公开涉及栅极氧化物保护电路，其用于保护场效应晶体管（FET）元件的栅极氧化物免受过电压条件，特别是在栅极氧化物特别容易受到影响的情况下，例如在某些制造阶段。每个栅极氧化物保护电路可以通过对应的第一和第二电阻元件耦合到对应的FET元件，该第一和第二电阻元件分别耦合到FET元件的对应的栅极连接节点和相应的第一连接节点。栅极连接节点和第一连接节点与FET元件的栅极氧化物的相对侧电气相邻。每个栅极氧化物保护电路可以通过限制栅极连接节点和第一连接节点之间的电压来保护其对应的FET元件。

5. 发明授权

US09484973B1 Voltage equalization for stacked FETs in RF switches 有权
标题翻译： RF开关中层叠FET的电压均衡
公开(公告)号：US09484973B1
公开(公告)日：2016-11-01
申请号：US12944212
申请日：2010-11-11
申请人： Michael Carroll , Daniel Charles Kerr , Ali Tombak , Philip Mason
发明人： Michael Carroll , Daniel Charles Kerr , Ali Tombak , Philip Mason
IPC分类号： H04B1/28 , H04B1/52
CPC分类号： H04B1/28 , H03K17/102 , H03K17/693 , H04B1/52
摘要： A switch branch that improves voltage uniformity across a series stack of an n-number of transistors is disclosed. A first one of the n-number of transistors is coupled to an input terminal, and an nth one of the n-number of transistors is coupled to an output terminal, where n is a positive integer greater than one. Predetermined parasitic capacitances associated with each of the n-number of transistors are adjustable with respect to capacitance value by predetermined amounts by dimensioning and arranging at least one metal layer element in proximity to the series stack of the n-number of transistors. Capacitance values for the predetermined parasitic capacitances are selected such that a voltage across the series stack of the n-number of transistors is uniformly distributed. In this way, the n-number of transistors can be reduced without risking a transistor breakdown within the series stack of the n-number of transistors.
摘要翻译：公开了一种提高n个晶体管的串联堆叠电压均匀性的开关支路。 n个晶体管中的第一个耦合到输入端子，并且n个晶体管中的第n个耦合到输出端子，其中n是大于1的正整数。与n个晶体管中的每一个相关联的预定的寄生电容通过将n个晶体管的串联堆叠中的至少一个金属层元件的尺寸设置和布置而相对于电容值可调节预定量。选择预定寄生电容的电容值，使得n个晶体管的串联堆叠上的电压均匀分布。以这种方式，可以减少n个晶体管，而不会在n个晶体管的串联堆叠内的晶体管击穿的风险。

6. 发明授权

US07633095B1 Integration of high-voltage devices and other devices 失效
标题翻译：集成高压设备和其他设备
公开(公告)号：US07633095B1
公开(公告)日：2009-12-15
申请号：US12140517
申请日：2008-06-17
申请人： Daniel Charles Kerr , David C. Dening , Julio Costa
发明人： Daniel Charles Kerr , David C. Dening , Julio Costa
IPC分类号： H01L29/74 , H01L29/423 , H01L29/45
CPC分类号： H01L29/7833 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7835 , H01L29/861 , H03K3/352 , H03K19/017545
摘要： Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The high-voltage devices may be used to create useful high-voltage circuits, such as level-shifting circuits, input protection circuits, charge pump circuits, switching circuits, latch circuits, latching switch circuits, interface circuits, any combination thereof, or the like. The high-voltage circuits may be controlled by the other circuitry.
摘要翻译：将高电压设备与其他电路集成，其可以使用低电压铸造技术（例如低电压互补金属氧化物半导体（LV-CMOS））工艺在半导体晶片上制造。另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。高电压装置可用于创建有用的高电压电路，例如电平移位电路，输入保护电路，电荷泵电路，开关电路，锁存电路，闭锁开关电路，接口电路，其任何组合，或喜欢。高压电路可以由另一电路来控制。

7. 发明授权

US08164110B1 Integrated lateral high-voltage diode and thyristor 有权
标题翻译：集成横向高压二极管和晶闸管
公开(公告)号：US08164110B1
公开(公告)日：2012-04-24
申请号：US12949296
申请日：2010-11-18
申请人： Daniel Charles Kerr , David C. Dening , Julio Costa
发明人： Daniel Charles Kerr , David C. Dening , Julio Costa
IPC分类号： H01L29/74
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7833 , H01L29/861 , H03K3/352
摘要： The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.
摘要翻译：本发明涉及诸如横向高压二极管（LHVD）或横向高压晶闸管的横向高压器件与半导体晶片上的其它电路的集成，其可以使用低压铸造技术，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。可以通过在阳极和阴极之间使用本征材料来增加LHVD的反向击穿电压能力。类似地，在横向高压晶闸管（例如横向高压可硅可控整流器（LHV-SCR））中，可以通过在阳极和阴极之间使用本征材料来增加LHV-SCR的耐受电压能力。

8. 发明授权

US07859009B1 Integrated lateral high-voltage diode and thyristor 有权
标题翻译：集成横向高压二极管和晶闸管
公开(公告)号：US07859009B1
公开(公告)日：2010-12-28
申请号：US12140504
申请日：2008-06-17
申请人： Daniel Charles Kerr , David C. Dening , Julio Costa
发明人： Daniel Charles Kerr , David C. Dening , Julio Costa
IPC分类号： H01L29/74
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/42364 , H01L29/7436 , H01L29/7833 , H01L29/861 , H03K3/352
摘要： The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.
摘要翻译：本发明涉及诸如横向高压二极管（LHVD）或横向高压晶闸管的横向高压器件与半导体晶片上的其它电路的集成，其可以使用低压铸造技术，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。可以通过在阳极和阴极之间使用本征材料来增加LHVD的反向击穿电压能力。类似地，在横向高压晶闸管（例如横向高压可硅可控整流器（LHV-SCR））中，可以通过在阳极和阴极之间使用本征材料来增加LHV-SCR的耐受电压能力。

9. 发明授权

US07989889B1 Integrated lateral high-voltage metal oxide semiconductor field effect transistor 有权
标题翻译：集成横向高压金属氧化物半导体场效应晶体管
公开(公告)号：US07989889B1
公开(公告)日：2011-08-02
申请号：US12140491
申请日：2008-06-17
申请人： Daniel Charles Kerr , David C. Dening , Julio Costa
发明人： Daniel Charles Kerr , David C. Dening , Julio Costa
IPC分类号： H01L29/66
CPC分类号： H01L29/868 , H01L29/1045 , H01L29/66659 , H01L29/7436 , H01L29/7835 , H03F3/213
摘要： The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.
摘要翻译：本发明涉及横向高压金属氧化物半导体场效应晶体管（LHV-MOSFET）与半导体晶片上的其它电路的集成，其可以使用低压铸造技术制造，例如低电压互补金属氧化物半导体（LV-CMOS）工艺。另一电路可以包括诸如用于逻辑电路，计算机电路等的开关晶体管或诸如微机电系统（MEMS）开关的其他高电压器件的低电压器件。可以通过在源极和漏极之间使用本征材料来增加LHV-MOSFET的漏极电压能力源。可以通过在LHV-MOSFET的栅极和沟道之间使用诸如厚氧化物的绝缘体材料来增加LHV-MOSFET的栅极电压能力。

10. 发明授权

US08076750B1 Linearity improvements of semiconductor substrate based radio frequency devices 有权
公开(公告)号：US08076750B1
公开(公告)日：2011-12-13
申请号：US12958494
申请日：2010-12-02
申请人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
发明人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
IPC分类号： H01L29/00
CPC分类号： H01L23/645 , H01L23/5227 , H01L23/552 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

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