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    • 8. 发明申请
    • Thin film transistor array panel for x-ray detector
    • 用于x射线探测器的薄膜晶体管阵列面板
    • US20060124932A1
    • 2006-06-15
    • US10538779
    • 2003-12-11
    • In-Su JooJoon-Hoo Choi
    • In-Su JooJoon-Hoo Choi
    • H01L29/04
    • H01L27/1214H01L27/14658H01L27/14659H01L27/14692
    • A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
    • 用于X射线检测器的薄膜晶体管阵列面板包括具有光电二极管的虚拟像素和用于检测漏电流的TFT。 光电二极管包括彼此面对的第一和第二电极(178,195)和设置在第一电极和第二电极之间的光电导层(800)。 TFT包括半导体层(150),栅电极(123),连接到数据线的源电极(173),连接到光电二极管的漏电极(175)。 虚拟像素还包括用于阻挡入射在光电二极管上的光的遮光层(196)。 或者,半导体层在源电极和漏电极之间断开。