会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE
    • 薄膜晶体管阵列基板,包括其的有机发光显示装置和制造薄膜晶体管阵列基板的方法
    • US20130200379A1
    • 2013-08-08
    • US13589636
    • 2012-08-20
    • Chun-Gi YOUJoon-Hoo Choi
    • Chun-Gi YOUJoon-Hoo Choi
    • H01L51/50H01L21/336H01L29/786
    • H01L27/1288H01L27/1255H01L27/3262H01L29/4908
    • A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.
    • 薄膜晶体管(TFT)阵列基板包括:TFT,包括有源层,栅电极,源电极和漏电极,有源层和栅电极之间的第一绝缘层,以及第二绝缘层和第三绝缘层, 所述栅电极和所述源极漏极,所述第一绝缘层和在所述TFT中延伸的所述第二绝缘层,包括透明导电氧化物材料的像素电极,所述像素电极在所述第一绝缘层和所述第二绝缘层上,并且为 通过所述第三绝缘层中的开口连接到所述源电极或漏电极;电容器,包括与所述栅电极相同的层上的第一电极和与所述像素电极相同的层上的第二电极; 以及覆盖所述源电极和漏极的第四绝缘层,并且经由开口暴露所述像素电极。
    • 8. 发明申请
    • THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT EMITTING DISPLAY DEVICE COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE SAME
    • 薄膜晶体管阵列基板,包含该基板的有机发光显示装置及其制造方法
    • US20130126882A1
    • 2013-05-23
    • US13480746
    • 2012-05-25
    • Chun-Gi YOUJoon-Hoo Choi
    • Chun-Gi YOUJoon-Hoo Choi
    • H01L51/50H01L21/336H01L29/786
    • H01L27/1255H01L27/124H01L27/3248H01L27/326H01L27/3276H01L51/5206H01L51/5215H01L2227/323
    • A thin film transistor array substrate includes a thin film transistor including an activation layer, a gate electrode, source and drain electrodes, a first insulation layer between the activation layer and the gate electrode, and a second insulation layer between the gate electrode and the source and drain electrodes, a pixel electrode including a transparent conductive oxide, the pixel electrode being on a portion of the first insulation layer extending from the thin film transistor and being connected to one of the source and drain electrodes via an opening in the second insulation layer, a capacitor including a first electrode and a second electrode, the first electrode being on a same layer as the activation layer and including a transparent conductive oxide, and the second electrode being between the first and second insulation layers, and a third insulation layer covering the source and drain electrodes and exposing the pixel electrode.
    • 薄膜晶体管阵列基板包括薄膜晶体管,其包括激活层,栅电极,源极和漏极,激活层和栅电极之间的第一绝缘层,以及栅电极和源极之间的第二绝缘层 和漏电极,包括透明导电氧化物的像素电极,所述像素电极在所述第一绝缘层的从所述薄膜晶体管延伸的部分上并且经由所述第二绝缘层中的开口连接到所述源极和漏极之一 包括第一电极和第二电极的电容器,所述第一电极位于与所述活化层相同的层上并且包括透明导电氧化物,所述第二电极位于所述第一绝缘层和所述第二绝缘层之间,并且所述第三绝缘层覆盖 源电极和漏极,并暴露像素电极。