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1. 发明授权

US08115262B2 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same 有权
标题翻译：微电子器件的介质多层结构及其制造方法
公开(公告)号：US08115262B2
公开(公告)日：2012-02-14
申请号：US12498311
申请日：2009-07-06
申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶硅酸盐（M1-xSixOy）或无定形硅酸盐氮化物（M1-xSixOyNz）制成的下电介质层，以及形成在下电介质层的顶部上的上电介质层的无定形金属氧化物（M'Oy）或无定形金属氧氮化物（M'OyNz）。

2. 发明授权

US07588989B2 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same 有权
标题翻译：微电子器件的介质多层结构及其制造方法
公开(公告)号：US07588989B2
公开(公告)日：2009-09-15
申请号：US11226053
申请日：2005-09-13
申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
IPC分类号： H01L21/336
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶硅酸盐（M1-xSixOy）或无定形硅酸盐氮化物（M1-xSixOyNz）制成的下电介质层，以及形成在下电介质层的顶部上的上电介质层的无定形金属氧化物（M'Oy）或无定形金属氧氮化物（M'OyNz）。

3. 发明申请

US20060054980A1 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same 有权
标题翻译：微电子器件的介质多层结构及其制造方法
公开(公告)号：US20060054980A1
公开(公告)日：2006-03-16
申请号：US11226053
申请日：2005-09-13
申请人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jong-Ho Lee , Hyung-Suk Jung , Jung-Hyoung Lee
IPC分类号： H01L21/8238 , H01L29/94
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/28194 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7833 , H01L29/7881 , H01L29/94 , Y10T428/265
摘要： A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).
摘要翻译：在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。电介质多层结构包括由非晶态硅酸盐（M 1-x Si x O x O y）或无定形硅酸盐制成的下电介质层氮化物（M 1-x Si x O y N z N z），以及形成的上电介质层在下部电介质层的顶部，并且由非晶金属氧化物（M'O y y）或非晶金属氧氮化物（M'O y N y） / SUB>）。

4. 发明申请

US20060257563A1 Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique 审中-公开
标题翻译：使用原子层沉积技术制造掺杂硅的金属氧化物层的方法
公开(公告)号：US20060257563A1
公开(公告)日：2006-11-16
申请号：US11329696
申请日：2006-01-11
申请人： Seok-Joo Doh , Shi-Woo Rhee , Jong-Pyo Kim , Jung-Hyoung Lee , Jong-Ho Lee , Yun-Seok Kim
发明人： Seok-Joo Doh , Shi-Woo Rhee , Jong-Pyo Kim , Jung-Hyoung Lee , Jong-Ho Lee , Yun-Seok Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/401 , C23C16/45529 , C23C16/45531
摘要： There are provided methods of fabricating a silicon-doped metal oxide layer on a semiconductor substrate using an atomic layer deposition technique. The methods include an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon-doped metal oxide layer formation cycle Q times. At least one of the values K and Q is an integer of 2 or more. K and Q are integers ranging from 1 to about 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, and then injecting an oxide gas into the reactor. The silicon-doped metal oxide layer formation cycle includes supplying a metal source gas including silicon into a reactor containing the substrate, and then injecting an oxide gas into the reactor. The sequence of operations of repeatedly performing the metal oxide layer formation cycle K times, followed by repeatedly performing the silicon-doped metal oxide layer formation cycle Q times, is performed one or more times until a silicon-doped metal oxide layer with a desired thickness is formed on the substrate. In addition, a method of fabricating a silicon-doped hafnium oxide (Si-doped HfO2) layer according to a similar invention method is also provided.
摘要翻译：提供了使用原子层沉积技术在半导体衬底上制造掺硅金属氧化物层的方法。这些方法包括重复进行金属氧化物层形成循环K次的操作和重复进行掺硅金属氧化物层形成循环Q次的操作。值K和Q中的至少一个是2以上的整数。 K和Q分别为1至约10的整数。金属氧化物层形成循环包括将金属源气体供给到包含基板的反应器中，然后将氧化物气体注入到反应器中的步骤。掺杂硅的金属氧化物层形成循环包括将含有硅的金属源气体供给到含有该基板的反应器中，然后将氧化物气体注入反应器。重复执行金属氧化物层形成循环K次的操作顺序，随后重复进行掺杂硅的金属氧化物层形成循环Q次，执行一次或多次，直到具有所需厚度的掺硅金属氧化物层形成在基板上。此外，还提供了根据类似的发明方法制造掺杂硅的氧化铪（Si掺杂的HfO 2 N 2）层的方法。

5. 发明申请

US20070059447A1 Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same 审中-公开
标题翻译：制造氧化镧层的方法及使用其制造MOSFET和电容器的方法
公开(公告)号：US20070059447A1
公开(公告)日：2007-03-15
申请号：US11599207
申请日：2006-11-14
申请人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
IPC分类号： C23C16/00
CPC分类号： H01L21/0228 , C23C16/40 , H01L21/02175 , H01L21/02192 , H01L21/022 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517
摘要： Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.
摘要翻译：公开了制造氧化镧层的方法以及特别适用于使用这种氧化镧层的半导体应用的MOSFET和/或电容器的制造方法。所述方法包括将半导体衬底设置到腔室中的预备步骤。然后将三（双（三甲基甲硅烷基）氨基）镧作为镧前体注入室中，使得镧前体在半导体衬底上被化学吸附。然后，在进行室的第一次吹扫之后，至少一个氧化剂被注入到室中，使得氧化剂与半导体衬底上的镧前体化学吸附。然后，房间被第二次清除。将镧前体注入到室中，首先清洗室，将氧化剂注入到室中，以及对室进行第二次净化的所述步骤可以被顺序地和重复地进行，以形成具有增强的半导体的所需厚度的氧化镧层特点

6. 发明授权

US07153786B2 Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same 有权
标题翻译：制造氧化镧层的方法及使用其制造MOSFET和电容器的方法
公开(公告)号：US07153786B2
公开(公告)日：2006-12-26
申请号：US11034512
申请日：2005-01-12
申请人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0228 , C23C16/40 , H01L21/02175 , H01L21/02192 , H01L21/022 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517
摘要： Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.
摘要翻译：公开了制造氧化镧层的方法以及特别适用于使用这种氧化镧层的半导体应用的MOSFET和/或电容器的制造方法。所述方法包括将半导体衬底设置到腔室中的预备步骤。然后将三（双（三甲基甲硅烷基）氨基）镧作为镧前体注入室中，使得镧前体在半导体衬底上被化学吸附。然后，在进行室的第一次吹扫之后，至少一个氧化剂被注入到室中，使得氧化剂与半导体衬底上的镧前体化学吸附。然后，房间被第二次清除。将镧前体注入到室中，首先清洗室，将氧化剂注入到室中，以及对室进行第二次净化的所述步骤可以被顺序地和重复地进行，以形成具有增强的半导体的所需厚度的氧化镧层特点

7. 发明申请

US20050156256A1 Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the same 有权
标题翻译：制造氧化镧层的方法及使用其制造MOSFET和电容器的方法
公开(公告)号：US20050156256A1
公开(公告)日：2005-07-21
申请号：US11034512
申请日：2005-01-12
申请人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
发明人： Jong-Pyo Kim , Jung-Hyun Lee , Bum-Seok Seo , Jung-Hyoung Lee
IPC分类号： H01L21/31 , C23C16/40 , H01L21/314 , H01L21/316 , H01L29/76
CPC分类号： H01L21/0228 , C23C16/40 , H01L21/02175 , H01L21/02192 , H01L21/022 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517
摘要： Methods of fabricating a lanthanum oxide layer, and methods of fabricating a MOSFET and/or a capacitor especially adapted for semiconductor applications using such a lanthanum oxide layer are disclosed. The methods include a preliminary step of disposing a semiconductor substrate into a chamber. Tris(bis(trimethylsilyl)amino)Lanthanum as a lanthanum precursor is then injected into the chamber such that the lanthanum precursor is chemisorbed on the semiconductor substrate. Then, after carrying out a first purge of the chamber, at least one oxidizer is injected into the chamber such that the oxidizer is chemisorbed with the lanthanum precursor on the semiconductor substrate. Then, the chamber is purged a second time. The described steps of injecting the lanthanum precursor into the chamber, first-purging the chamber, injecting an oxidizer into the chamber, and second-purging the chamber may be sequentially and repeatedly performed to form a lanthanum oxide layer of a desired thickness having enhanced semiconductor characteristics.
摘要翻译：公开了制造氧化镧层的方法以及特别适用于使用这种氧化镧层的半导体应用的MOSFET和/或电容器的制造方法。所述方法包括将半导体衬底设置到腔室中的预备步骤。然后将三（双（三甲基甲硅烷基）氨基）镧作为镧前体注入室中，使得镧前体在半导体衬底上被化学吸附。然后，在进行室的第一次吹扫之后，至少一个氧化剂被注入到室中，使得氧化剂与半导体衬底上的镧前体化学吸附。然后，房间被第二次清除。将镧前体注入到室中，首先清洗室，将氧化剂注入到室中，以及对室进行第二次净化的所述步骤可以被顺序地和重复地进行，以形成具有增强的半导体的所需厚度的氧化镧层特点

8. 发明授权

US09587172B2 Organic light-emitting diode and method of manufacturing the same 有权
标题翻译：有机发光二极管及其制造方法
公开(公告)号：US09587172B2
公开(公告)日：2017-03-07
申请号：US13121983
申请日：2009-10-01
申请人： Jung-Hyoung Lee , Se-Hwan Son , Min-Soo Kang
发明人： Jung-Hyoung Lee , Se-Hwan Son , Min-Soo Kang
IPC分类号： H01L51/54 , H01L33/42 , C09K11/06 , H05B33/26 , H05B33/28 , H01L51/00 , H01L51/50
CPC分类号： C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1044 , H01L51/0072 , H01L51/5052 , H05B33/26 , H05B33/28
摘要： The present invention provides an organic light emitting diode comprising a substrate; a transparent cathode; an anode; and an organic material layer interposed between the transparent cathode and the anode, wherein the organic material layer comprises a light emitting layer and an n-type doped electron transport layer, the n-type doped electron transport layer includes an electron transport material and an n-type dopant and is disposed between the transparent cathode and the light emitting layer, and a method for manufacturing the same.
摘要翻译：本发明提供一种包含基板的有机发光二极管; 透明阴极; 阳极; 以及插入在透明阴极和阳极之间的有机材料层，其中有机材料层包括发光层和n型掺杂电子传输层，n型掺杂电子传输层包括电子传输材料和n 并且设置在透明阴极和发光层之间，以及其制造方法。

9. 发明授权

US09028974B2 OLED and fabricating method of the same 有权
标题翻译： OLED及其制造方法相同
公开(公告)号：US09028974B2
公开(公告)日：2015-05-12
申请号：US12224804
申请日：2007-03-07
申请人： Min-Soo Kang , Jeoung-Kwen Noh , Jung-Hyoung Lee
发明人： Min-Soo Kang , Jeoung-Kwen Noh , Jung-Hyoung Lee
IPC分类号： H01L51/54 , H01L51/52 , H01L51/50 , H05B33/10 , H01L27/32
CPC分类号： H01L51/5088 , H01L27/3209 , H01L27/3239 , H01L51/5004 , H01L51/504 , H01L51/5056 , H01L51/5092 , H05B33/10
摘要： The present invention provides an organic light emitting device comprising: a substrate; a first conductive layer and a second conductive layer, which are sequentially positioned on the substrate; and at least one organic material layer, including a light emitting layer, which is interposed between the first conductive layer and the second conductive layer; wherein the organic light emitting device comprises a pattern layer formed corresponding to the light emitting region between at least one organic material layer and at least one conductive layer of the first conductive layer and the second conductive layer; charges are injected or transported between the conductive layer and the organic material layer through the pattern layer; and charges are not directly injected or transported in the region in which two layers each in contact with the upper surface and the lower surface of the pattern layer are directly in contact, and a method for preparation thereof.
摘要翻译：本发明提供了一种有机发光器件，包括：衬底; 第一导电层和第二导电层，其顺序地位于所述基板上; 以及介于所述第一导电层和所述第二导电层之间的至少一个有机材料层，包括发光层; 其中所述有机发光器件包括对应于至少一个有机材料层和所述第一导电层的至少一个导电层与所述第二导电层之间的所述发光区域形成的图案层; 电荷通过图案层在导电层和有机材料层之间注入或传输; 并且在与图案层的上表面和下表面接触的两层直接接触的区域中不进行直接注入或输送电荷及其制备方法。

10. 发明授权

US08481362B2 Thin film transistor and method for preparing the same 有权
标题翻译：薄膜晶体管及其制备方法
公开(公告)号：US08481362B2
公开(公告)日：2013-07-09
申请号：US12451050
申请日：2008-04-25
申请人： Jung-Hyoung Lee
发明人： Jung-Hyoung Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/78618
摘要： The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide (ZnO series) electrode having one or more of Si, Mo, and W as a source electrode and a drain electrode, and a method of manufacturing the same.
摘要翻译：薄膜晶体管及其制造方法技术领域本发明涉及薄膜晶体管及其制造方法。更具体地，本发明涉及一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有作为源电极和漏电极的Si，Mo和W中的一种或多种的氧化锌（ZnO系）电极。

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