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1. 发明授权

US08710520B2 Light emitting diode having multi-cell structure and method of manufacturing the same 有权
标题翻译：具有多单元结构的发光二极管及其制造方法
公开(公告)号：US08710520B2
公开(公告)日：2014-04-29
申请号：US13504522
申请日：2010-11-02
申请人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
发明人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
IPC分类号： H01L33/36
CPC分类号： H01L33/60 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2933/0016
摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.
摘要翻译：公开了具有包括多个单电池的多单元结构的发光二极管。发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率。即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

2. 发明授权

US08294167B2 Light emitting diode with high electrostatic discharge and fabrication method thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US08294167B2
公开(公告)日：2012-10-23
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/00
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

3. 发明授权

US5856206A Method for fabricating bragg reflector using in situ laser reflectometry 失效
标题翻译：使用原位激光反射法制造布拉格反射器的方法
公开(公告)号：US5856206A
公开(公告)日：1999-01-05
申请号：US842871
申请日：1997-04-17
申请人： Jong-Hyeob Baek , Bun Lee
发明人： Jong-Hyeob Baek , Bun Lee
IPC分类号： G02B5/08 , C23C14/54 , C23C16/52 , C30B29/40 , H01L21/205 , H01S5/00 , H01S5/028 , H01S5/183 , H01S5/187 , C23C14/00
CPC分类号： C23C16/52 , H01S5/0042 , H01S5/18361
摘要： A Bragg reflector with a uniform thickness is fabricated by means of an in-situ laser reflectometer. In order to fabricate the Bragg reflector, a plurality of buffer layers are formed on a semiconductor substrate. Then, first and second epitaxial layers are alternatively grown on the buffer layers. While growing the epitaxial layers, the thickness of the first and second epitaxial layers are continuously measured by using a laser beam having the same wavelength as a reflective wavelength of the Bragg reflector. In this way, the thickness of the Bragg reflector is precisely controlled according to the measurements, so that the Bragg reflector may be fabricated uniformly with a predetermined thickness.
摘要翻译：具有均匀厚度的布拉格反射器通过原位激光反射计制造。为了制造布拉格反射器，在半导体衬底上形成多个缓冲层。然后，在缓冲层上交替生长第一和第二外延层。在生长外延层的同时，通过使用具有与布拉格反射器的反射波长相同的波长的激光束来连续测量第一和第二外延层的厚度。以这种方式，根据测量精确地控制布拉格反射器的厚度，使得可以以预定厚度均匀地制造布拉格反射器。

4. 发明授权

US5705403A Method of measuring doping characteristic of compound semiconductor in real time 失效
标题翻译：实时测量化合物半导体掺杂特性的方法
公开(公告)号：US5705403A
公开(公告)日：1998-01-06
申请号：US696092
申请日：1996-08-13
申请人： Jong-Hyeob Baek , Bun Lee , Jin-Hong Lee , Sung-Woo Choi
发明人： Jong-Hyeob Baek , Bun Lee , Jin-Hong Lee , Sung-Woo Choi
IPC分类号： G01N21/17 , G01N21/31 , H01L21/205 , H01L21/66 , H01L33/30 , H01L21/00
CPC分类号： H01L21/02579 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262
摘要： A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.
摘要翻译：一种实时检测半导体掺杂杂质的浓度的方法，以及在生长中使用实时分析装置时由于掺杂而引起的生长条件变化之间的随时间的变化而检测其生长速度变化的方法通过MOCVD方法的异质结构半导体。通过实时分析装置生长期间的反射信号具有周期性质，当在外延层上存在吸收时，反射信号的振幅变化取决于吸收系数，可以通过使用吸收系数与杂质浓度的关系。另外，如果独立地分析每个峰，则分别测量相应于时间的生长速率，从而在碳掺杂的AlAs层中感测到依赖于生长速率的时间的降低的生长速率。

5. 发明授权

US5472505A Apparatus for monitoring films during MOCVD 失效
标题翻译：用于在MOCVD期间监测膜的装置
公开(公告)号：US5472505A
公开(公告)日：1995-12-05
申请号：US359198
申请日：1994-12-19
申请人： Bun Lee , Dug-Bong Kim , Jong-Hyeob Baek
发明人： Bun Lee , Dug-Bong Kim , Jong-Hyeob Baek
IPC分类号： C23C16/52 , C30B25/02 , C23C14/00
CPC分类号： C30B25/02 , C23C16/52 , Y10T117/10 , Y10T117/1004
摘要： An apparatus for monitoring a film growth is disclosed, in which, when a crystalline thin film is grown by applying an MOCVD (metalorganic chemical vapor deposition method), the variation of the thickness and composition due to certain factors can be detected with real time during the film growing process, and an in-situ adjustment is possible. As the optical detector for detecting two sets of reflected beams which are reflected from the film, a silicon detector and a germanium detector are used, the former being suitable for detecting short wavelength laser beams, and the latter being suitable for detecting long wavelength laser beams. Thus two different wavelengths are detected with real time, thereby measuring the thickness and composition of the film.
摘要翻译：公开了一种用于监测膜生长的装置，其中当通过施加MOCVD（金属有机化学气相沉积法）生长结晶薄膜时，可以实时检测由于某些因素导致的厚度和组成的变化成膜过程和原位调整是可能的。作为用于检测从膜反射的两组反射光束的光检测器，使用硅检测器和锗检测器，前者适用于检测短波长激光束，后者适用于检测长波长激光束。因此，实时检测两个不同的波长，从而测量膜的厚度和组成。

6. 发明授权

US09171717B2 Method for manufacturing a group III nitride substrate using a chemical lift-off process 有权
标题翻译：使用化学剥离工艺制造III族氮化物衬底的方法
公开(公告)号：US09171717B2
公开(公告)日：2015-10-27
申请号：US13877082
申请日：2011-11-04
申请人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
发明人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
IPC分类号： H01L29/20 , H01L21/02 , H01L33/00 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/02664 , H01L29/045 , H01L33/0079
摘要： The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
摘要翻译：在本发明的具体实施例中公开的非极性或半极性III族氮化物层可以用于各种电子器件的基板，其中通过使用氮化物衬底的氮化物衬底来减轻或解决常规极性III族氮化物衬底的问题本发明，并且可以通过化学剥离工艺制造氮化物衬底。

7. 发明申请

US20130193558A1 METHOD FOR MANUFACTURING A GROUP III NITRIDE SUBSTRATE USING A CHEMICAL LIFT-OFF PROCESS 有权
标题翻译：使用化学提升过程制造III类氮化物衬底的方法
公开(公告)号：US20130193558A1
公开(公告)日：2013-08-01
申请号：US13877082
申请日：2011-11-04
申请人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
发明人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
IPC分类号： H01L21/02 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/02664 , H01L29/045 , H01L33/0079
摘要： The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
摘要翻译：在本发明的具体实施例中公开的非极性或半极性III族氮化物层可以用于各种电子器件的基板，其中通过使用氮化物衬底的氮化物衬底来减轻或解决常规极性III族氮化物衬底的问题本发明，并且可以通过化学剥离工艺制造氮化物衬底。

8. 发明申请

US20110198635A1 Light Emitting Diode With Metal Piles and Multi-Passivation Layers and Its Manufacturing Method 有权
标题翻译：具有金属桩和多功能钝化层的发光二极管及其制造方法
公开(公告)号：US20110198635A1
公开(公告)日：2011-08-18
申请号：US12672404
申请日：2008-08-07
申请人： Sang Mook Kim , Jong Hyeob Baek , Gang Ho Kim , Jung-In Kang , Hong Seo Yom , Young Moon Yu
发明人： Sang Mook Kim , Jong Hyeob Baek , Gang Ho Kim , Jung-In Kang , Hong Seo Yom , Young Moon Yu
IPC分类号： H01L33/60
CPC分类号： H01L33/385 , H01L33/46 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/49107 , H01L2924/00014 , H01L2933/0016 , H01L2224/05599
摘要： The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
摘要翻译：本发明涉及一种具有金属堆和一个或多个钝化层的发光二极管及其制造方法，该方法包括：分别在第一半导体层和第二半导体层上进行台面蚀刻的第一步，一个底物顺序！在台面蚀刻的上表面和侧面上形成反射层的第二步骤！第三步骤，通过具有第二半导体层的反射器层将一个或多个第一电极与第一半导体层和一个或多个第二电极接触; 在反射层和接触电极上形成第一钝化层的第四步骤; 以及第五步骤，通过一个或多个第一电极线将第一电极连接到第一焊盘，使具有金属堆的形状的垂直延伸部的一端与一个或多个第二电极接触，并将通过一个或多个第二电极线对第二焊盘的垂直延伸。作为本发明的效果，发光面积的损失减小，电流扩散效率提高。

9. 发明申请

US20100295087A1 Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US20100295087A1
公开(公告)日：2010-11-25
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/02 , H01L33/42 , H01L33/62
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

10. 发明授权

US06410347B1 Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry 失效
标题翻译：使用反射法实时垂直腔表面发射激光的外延生长
公开(公告)号：US06410347B1
公开(公告)日：2002-06-25
申请号：US09395032
申请日：1999-09-13
申请人： Jong Hyeob Baek , Bun Lee
发明人： Jong Hyeob Baek , Bun Lee
IPC分类号： H01L2120
CPC分类号： C30B25/16 , H01S5/0042 , H01S5/18361
摘要： The method of manufacturing VCSEL composed of multiple material layers uses a main measuring laser having same wavelength of that of VCSEL so as to estimate the growth periods required for growing a predetermined thickness of the material layers by analyzing the reflected signal of the main measuring laser and then control the growth time durations of subsequent material layers. This method eliminates the need of pre-knowledge of refractive indexes and the growing speeds of the material layers. Also, an interruptive process for measuring thickness, growth speed or refractive indexes can be omitted so as to perform the entire epitaxial growth in-situ and thus improve the reproducibility and the uniformity. In addition, a subsidiary measuring laser may be used other than the main measuring laser for improving the accuracy of the control of growth time duration, where the subsidiary measuring laser has a different wavelength from that of VCSEL. The subsidiary measuring laser may be used especially in the case of fabricating the VCSEL without any buffer layer.
摘要翻译：制造由多个材料层构成的VCSEL的方法使用具有与VCSEL相同波长的主测量激光器，以便通过分析主测量激光器的反射信号来估计生长预定厚度的材料层所需的生长周期，以及然后控制后续材料层的生长时间。该方法消除了对折射率的预先知识和材料层的生长速度的需要。此外，可以省略用于测量厚度，生长速度或折射率的中断过程，以便原位执行整个外延生长，从而提高再现性和均匀性。此外，除了主测量激光器之外，可以使用辅助测量激光器来提高生长时间的控制精度，其中辅助测量激光器具有与VCSEL不同的波长。辅助测量激光器可以特别用于制造没有任何缓冲层的VCSEL的情况。

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