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1. 发明授权

US09276175B2 Light emitting device, light emitting device package 有权
标题翻译：发光装置，发光装置封装
公开(公告)号：US09276175B2
公开(公告)日：2016-03-01
申请号：US12979673
申请日：2010-12-28
申请人： Hyung Jo Park , Sun Kyung Kim , Woon Kyung Choi
发明人： Hyung Jo Park , Sun Kyung Kim , Woon Kyung Choi
IPC分类号： H01L33/00 , H01L33/44
CPC分类号： H01L33/44 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.
摘要翻译：提供了一种发光器件，发光器件封装和照明系统。发光器件包括发光结构，发光结构上的缓冲层和缓冲层上的过滤层。

2. 发明授权

US09171717B2 Method for manufacturing a group III nitride substrate using a chemical lift-off process 有权
标题翻译：使用化学剥离工艺制造III族氮化物衬底的方法
公开(公告)号：US09171717B2
公开(公告)日：2015-10-27
申请号：US13877082
申请日：2011-11-04
申请人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
发明人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
IPC分类号： H01L29/20 , H01L21/02 , H01L33/00 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/02664 , H01L29/045 , H01L33/0079
摘要： The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
摘要翻译：在本发明的具体实施例中公开的非极性或半极性III族氮化物层可以用于各种电子器件的基板，其中通过使用氮化物衬底的氮化物衬底来减轻或解决常规极性III族氮化物衬底的问题本发明，并且可以通过化学剥离工艺制造氮化物衬底。

3. 发明申请

US20130193558A1 METHOD FOR MANUFACTURING A GROUP III NITRIDE SUBSTRATE USING A CHEMICAL LIFT-OFF PROCESS 有权
标题翻译：使用化学提升过程制造III类氮化物衬底的方法
公开(公告)号：US20130193558A1
公开(公告)日：2013-08-01
申请号：US13877082
申请日：2011-11-04
申请人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
发明人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
IPC分类号： H01L21/02 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/02664 , H01L29/045 , H01L33/0079
摘要： The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
摘要翻译：在本发明的具体实施例中公开的非极性或半极性III族氮化物层可以用于各种电子器件的基板，其中通过使用氮化物衬底的氮化物衬底来减轻或解决常规极性III族氮化物衬底的问题本发明，并且可以通过化学剥离工艺制造氮化物衬底。

4. 发明申请

US20110156073A1 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE 有权
标题翻译：发光装置，发光装置包装
公开(公告)号：US20110156073A1
公开(公告)日：2011-06-30
申请号：US12979673
申请日：2010-12-28
申请人： Hyung Jo Park , Sun Kyung Kim , Woon Kyung Choi
发明人： Hyung Jo Park , Sun Kyung Kim , Woon Kyung Choi
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.
摘要翻译：提供了一种发光器件，发光器件封装和照明系统。发光器件包括发光结构，发光结构上的缓冲层和缓冲层上的过滤层。

5. 发明申请

US20100207160A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100207160A1
公开(公告)日：2010-08-19
申请号：US12705368
申请日：2010-02-12
申请人： Hyung Jo PARK
发明人： Hyung Jo PARK
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/025 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer including a first carrier blocking layer of semiconductor material; an active layer below the first conductive semiconductor layer; and a second conductive semiconductor layer below the active layer.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括：第一导电半导体层，包括半导体材料的第一载流子阻挡层; 在第一导电半导体层下面的有源层; 以及在有源层下面的第二导电半导体层。

6. 发明申请

US20100163904A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE PACKAGE HAVING THE SAME 有权
标题翻译：具有其的半导体发光器件和发光器件封装
公开(公告)号：US20100163904A1
公开(公告)日：2010-07-01
申请号：US12647827
申请日：2009-12-28
申请人： Hyung Jo PARK
发明人： Hyung Jo PARK
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L2224/48091 , H01L2924/00014
摘要： Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.
摘要翻译：提供了一种半导体发光器件和具有该半导体发光器件的发光器件封装。半导体发光器件包括发光结构，第一电极单元和第二电极层。发光结构包括在外边缘具有圆形侧表面的多个化合物半导体层。第一电极单元设置在发光结构上。第二电极层设置在发光结构的下方。

7. 发明申请

US20100123148A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100123148A1
公开(公告)日：2010-05-20
申请号：US12619038
申请日：2009-11-16
申请人： Hyung Jo Park
发明人： Hyung Jo Park
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405
摘要： Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, a first electrode, a second electrode layer, and a conductive support member. The plurality of compound semiconductor layers comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first electrode is formed under the compound semiconductor layer. The second electrode layer is formed on the compound semiconductor layer. The second electrode layer has an unevenness. The conductive support member is formed on the second electrode layer.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括多个化合物半导体层，第一电极，第二电极层和导电支撑构件。多个化合物半导体层包括第一导电类型半导体层，有源层和第二导电类型半导体层。第一电极形成在化合物半导体层下面。第二电极层形成在化合物半导体层上。第二电极层具有不均匀性。导电支撑构件形成在第二电极层上。

8. 发明申请

US20100038672A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100038672A1
公开(公告)日：2010-02-18
申请号：US12522823
申请日：2008-04-01
申请人： Hyung Jo Park
发明人： Hyung Jo Park
IPC分类号： H01L33/00 , H01L21/306
CPC分类号： H01L27/15
摘要： Disclosed is a light emitting device. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer comprising a first area and a second area, a third conductive semiconductor layer on the second area of the second conductive semiconductor layer, a first electrode layer electrically connecting the first conductive semiconductor layer with the second conductive semiconductor layer of the second area, and a second electrode layer electrically connecting the second conductive semiconductor layer with the third conductive semiconductor layer.
摘要翻译：公开了一种发光器件。发光器件包括第一导电半导体层，第一导电半导体层上的有源层，有源层上的第二导电半导体层，第二导电半导体层，包括第一区域和第二区域，第三导电半导体层在第二导电半导体层的第二区域上，将第一导电半导体层与第二区域的第二导电半导体层电连接的第一电极层和将第二导电半导体层与第三导电半导体层电连接的第二电极层层。

9. 发明授权

US08853719B2 Semiconductor light-emitting device and light-emitting device package having the same 有权
标题翻译：半导体发光器件和具有该半导体发光器件的发光器件封装
公开(公告)号：US08853719B2
公开(公告)日：2014-10-07
申请号：US12647827
申请日：2009-12-28
申请人： Hyung Jo Park
发明人： Hyung Jo Park
IPC分类号： H01L33/00 , H01L33/44 , H01L33/20 , H01L33/38
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L2224/48091 , H01L2924/00014
摘要： Provided are a semiconductor light-emitting device and a light-emitting device package having the same. The semiconductor light-emitting device comprises a light-emitting structure, a first electrode unit, and a second electrode layer. The light-emitting structure comprises a plurality of compound semiconductor layers having a rounded side surface at an outer edge. The first electrode unit is disposed on the light-emitting structure. The second electrode layer is disposed under the light-emitting structure.
摘要翻译：提供了一种半导体发光器件和具有该半导体发光器件的发光器件封装。半导体发光器件包括发光结构，第一电极单元和第二电极层。发光结构包括在外边缘具有圆形侧表面的多个化合物半导体层。第一电极单元设置在发光结构上。第二电极层设置在发光结构的下方。

10. 发明授权

US08487336B2 Light emitting device package 有权
标题翻译：发光装置封装
公开(公告)号：US08487336B2
公开(公告)日：2013-07-16
申请号：US12812915
申请日：2009-08-31
申请人： Hyung Jo Park
发明人： Hyung Jo Park
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device package is provided. The light emitting device package includes a substrate including a first cavity having a first depth and a lateral surface inclined with respect to a bottom surface and a second cavity having a second depth recessed from the bottom surface of the first cavity and a lateral surface perpendicular to the bottom surface of the first cavity, a first electrode layer and a second electrode layer on the substrate, and a light emitting diode within the second cavity, the light emitting diode being electrically connected to the first and second electrode layers.
摘要翻译：提供发光器件封装。发光器件封装包括：衬底，其包括具有第一深度和相对于底表面倾斜的侧表面的第一空腔和具有从第一腔的底表面凹入的第二深度的第二腔和垂直于第一腔的底表面，衬底上的第一电极层和第二电极层，以及第二腔内的发光二极管，发光二极管电连接到第一和第二电极层。

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